TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
1
36 - 40 GHz Power Amplifier TGA1073C-SCC
Key Features and Performance
0.25um pHEMT Technology
36-40 GHz Frequency Range
26 dBm Nominal Pout @ P1dB, 38GHz
15 dB Nominal Gain
Bias 5-7V @ 240 mA
Chip Dimensions 2.4 mm x 1.45 mm
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Radio
The TriQuint TGA1073C-SCC is a two stage PA MMIC
design using TriQuint's proven 0.25
m Power pHEMT
process to support a variety of millimeter wave
applications including point-to-point digital radio and
point-to-multipoint systems.
The two-stage design consists of two 400
m input
devices driving four 400
m output devices.
The TGA1073C provides 24 dBm of output power at
1dB gain compression and 26 dBm saturated output
power across the 36-40 GHz with a typical small signal
gain of 15 dB.
The TGA1073C requires a minimum of off-chip
components. Each device is 100% DC and RF tested
on-wafer to ensure performance compliance. The
device is available in chip form.
-25
-20
-15
-10
-5
0
5
10
15
20
33
34
35
36
37
38
39
40
41
42
43
TGA1073C Typical RF Performance (Fixtured)
G
a
in
a
n
d R
e
t
u
r
n
Lo
s
s
(
d
B
)
Frequency (GHz)
S21
S11
S22
TGA1073C Typical RF Performance (Fixtured)
Outp
ut P
o
wer
@
P
1
dB
(dBm
)
Frequency (GHz)
3
6
9
12
15
18
21
24
27
30
33
36
37
38
39
40
41
42
30
32
34
36
38
40
42
44
46
48
50
VD = +5V, +6V, +7V
P1dB
IMR3 @ VD = +6V
I
M
R3
@ S
C
L
=
P
1
d
B
-1
0d
B (d
Bc)
August 15, 2000
Parameter
Unit +5V Supply +6V Supply +7V Supply
Small Signal Gain
dB
15
Gain Flatness
dBpp
1
Output P1dB
dBm
24
25
26
Saturated Output Power
dBm
26
27
28
Saturated PAE
%
23
22
20
Output OTOI
dBm
34
IMR3 @ SCL = P1dB - 10dB
dBc
34
Input Return Loss
dB
-10
Output Return Loss
dB
-8
Reverse Isolation
dB
-35
Quiescent Current
mA
225
240
260
Typical Performance, 36-40 GHz
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
2
MAXIMUM RATINGS
SYMBOL
PARAMETER 5/
VALUE
NOTES
V
+
POSITIVE SUPPLY VOLTAGE
8 V
I
+
POSITIVE SUPPLY CURRENT
480 mA
1/
P
IN
INPUT CONTINUOUS WAVE POWER
23 dBm
4/
P
D
POWER DISSIPATION
3.84 W
T
CH
OPERATING CHANNEL TEMPERATURE
150
0
C
2/ 3/
T
M
MOUNTING TEMPERATURE
(30 SECONDS)
320
0
C
T
STG
STORAGE TEMPERATURE
-65 to 150
0
C
1/
Total current for all stages.
2/
These ratings apply to each individual FET.
3/
Junction operating temperature will directly affect the device median time to failure (T
M
). For maximum
life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/
This value reflects an estimate. Actual value will be inserted as soon as it is determined.
5/
These ratings represent the maximum operable values for this device.
TGA1073C-SCC
DC SPECIFICATIONS (100%)
(T
A
= 25
C + 5 C)
NOTES
SYMBOL
TEST CONDITIONS 2/
LIMITS
UNITS
MIN
MAX
I
DSS1
STD
40
188
mA
G
M1
STD
88
212
mS
1/
|V
P1
|
STD
0.5
1.5
V
1/
|V
P2
|
STD
0.5
1.5
V
1/
|V
P3-6
|
STD
0.5
1.5
V
1/
|V
BVGD1,2
|
STD
11
30
V
1/
|V
BVGS1
|
STD
11
30
V
1/
V
P
, V
BVGD
, and V
BVGS
are negative.
2/
The measurement conditions are subject to change at the manufacture's discretion (with appropriate notification to
the buyer).
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
3
TGA1073C-SCC
RF SPECIFICATIONS
(T
A
= 25
C + 5C)
NOTE
TEST
MEASUREMENT
CONDITIONS
VALUE
UNITS
6V @ 240mA
MIN
TYP
MAX
1/
SMALL-SIGNAL
GAIN MAGNITUDE
36 39 GHz
40 GHz
12
9
15
14
dB
dB
POWER OUTPUT
AT 1 dB GAIN
COMPRESSION
37 GHz
38.5 GHz
40 GHz
23
23
21
26
26
25
dBm
dBm
dBm
1/
INPUT RETURN LOSS
MAGNITUDE
36 40 GHz
-10
dB
1/
OUTPUT RETURN LOSS
MAGNITUDE
36 40 GHz
-8
dB
OUTPUT THIRD ORDER
INTERCEPT
33
dBm
1/
RF probe data is taken at 1 GHz steps.
RELIABILITY DATA
PARAMETER
BIAS CONDITIONS
P
DISS
R
JC
T
CH
T
M
V
D
(V)
I
D
(mA)
(W)
(C/W)
(
C)
(HRS)
R
JC
Thermal resistance
(channel to backside of
c/p)
6
240
1.44
32.43
116.7
2.1 E7
Note: Assumes eutectic attach using 1.5 mil thick 80/20 AuSn mounted to a 20mil CuMo Carrier at 70
C
baseplate temperature. Worst case condition with no RF applied, 100% of DC power is
dissipated.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
4
Mechanical Characteristics
2
1
8
3
5
4
6
7
Units: millimeters (inches)
Thickness: 0.1016 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.0508 (0.002)
Bond Pad #1
(RF Input)
0.100 x 0.130 (0.004 x .005)
Bond Pad #2
(RF Output)
0.100 x 0.130 (0.004 x .005)
Bond Pads #3, 4, 5
(VD)
0.100 x 0.100 (0.004 x .004)
Bond Pads #6, 7, 8
(VG)
0.100 x 0.100 (0.004 x .004)
TGA1073C-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
5
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
1
F Cap on
Supply Line
100pF
0.01
F
100pF
100pF
V
G
V
D
RF In
RF Out
0.01
F
100pF
1
F Cap on
Supply Line
TGA1073C-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
6
TGA1073C-SCC
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
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