TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Feb 4, 2000
1
18-27.5 GHz 1W Power Amplifier TGA1135B
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Communications
Ka Band Sat-Com
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Key Features
0.25 um pHEMT Technology
14 dB Nominal Gain at 23GHz
30 dBm Nominal P1dB
38dBm OTOI typical
Typical 15dB Input/Output RL
Bias 6 - 7V @ 540 mA
On-chip power detector diode
Chip Dimensions 2.641 mm x 1.480 mm
TGA1135B Fixtured Amplifier Typical Small Signal Data
Wafer 993150303, 6V/540mA
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
S21 (
d
B
)
TGA1135B Nominal Output Power
Wafer 993150303, Idq=540mA
27
27.5
28
28.5
29
29.5
30
30.5
31
31.5
32
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Frequency (GHz)
P
1
dB (dBm)
Note: 1 dB of
compression not
reached on some parts
at 27, 27.5 GHz
VD = 6V
VD = 7V
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Feb 4, 2000
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA1135B
,
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
-5
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
S11 (
d
B
)
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
S21 (
d
B
)
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
-5
15 16 17 18 19
20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
S22 (
d
B
)
S22
S11
S21
Measured small signal data
6V, 540mA
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Feb 4, 2000
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Output TOI Measured Data
TGA1135B
TGA1135B Nominal Output Power
Wafer 993150303, Idq=540mA
27
27.5
28
28.5
29
29.5
30
30.5
31
31.5
32
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Frequency (GHz)
P1dB (
d
Bm
)
Note: 1 dB of
compression not
reached on some parts
at 27, 27.5 GHz
VD = 6V
VD = 7V
TGA1135B wafer 993150303 nominal performance
TOI performance @ Pin SCL=7dBm: Vd=6V, Id=540mA, separation = 10MHz
33
34
35
36
37
38
39
40
41
42
43
17
18
19
20
21
22
23
24
25
26
27
28
Frequency (GHz)
TO
I (
d
Bm
)
P1dB Measured Data
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Feb 4, 2000
4
REF3
GND
VG1
VG2
GND
DQ
PWR
DET
Q1b
Q2b
RF IN
VD
Q1a
Q2a
600
m
600
m
1200
m
1200
m
VG1
VG2
GND
DQ
VD
REF2
REF1
RF OUT
DET
OUT
Reference
diode 1
Reference
diode 2
Note:
drains not
connected
on lot
9931503
Note: If drain bias is from one side
only, maximum Id is 440mA
Note: no DC current
allowed into the "DQ" pad
TGA1135B
DC Schematic
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Feb 4, 2000
5
Dimensions in mm
RF I/O Pad: 200x100 mm
DC Pads: 105x105 mm
Die Area: 3.909 mm
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
1.
2
5
3: V
D
(
180x
100
m)
0.000
0.686
RF IN
0.
0
0
0
V
G
2: 0
.
612
DQ
: 0
.
875
0.833
PWR DET
(175x100
m)
RE
F
1:
0.
22
0
RE
F
2:
2.
54
3
0.098
RE
F
3:
2.
36
0
VD
:
1
.
25
3
(
180x
100
m)
0.373
RF OUT
1.480
2.
6
4
1
0.
6
12: V
G
2
0.
8
75: DQ
0.
0
9
5
DE
T
OUT
2.
5
4
3
TGA1135B
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Feb 4, 2000
6
TGA1135B built-in power detector
On-chip diode functions as envelope detector
External coupler and DC bias required
External coupler
(-20dB)
EG1135B
50
C=2pF
Video out
(V
det
)
10K
External
DC bias
RF
OUT
RF
OUT
V
bias
100pF
100pF
TGA1135B with external test coupler
(amplifier bias connections not shown)
V
det
RF
IN
RF
OUT
TGA1135B
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
EG1135B measured detector voltage offset vs output power with
20dB coupler: Vb=0.8V, f = 20GHz, Coupler loss is uncalibrated,
10K
load
0.01
0.1
1
10
8
10
12
14
16
18
20
22
24
26
28
30
32
Pout (dBm)
D
e
tecto
r
vo
l
t
ag
e (V)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Feb 4, 2000
7
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA1135B
100pF
Vg
Input TFN
Output TFN
Vd
Vd
100pF
Vg (optional)
100pF
0.01
F
Notes:
1. 1
F capacitor on gate, drain lines not
shown but required
2. 0.01
F capacitor may be connected to
"DQ" port as shown, or may be included
on drain line
3. Vg connection is recommended on
both sides for devices operating at or
above P1dB
0.01
F
0.01
F
0.01
F
100pF
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
DQ
DQ
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Feb 4, 2000
8
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
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