TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
January 21, 2002
1
18-27 GHz 1W Power Amplifier TGA1135B-SCC
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Communications
Ka Band Sat-Com
Key Features
0.25 um pHEMT Technology
14 dB Nominal Gain at 23GHz
29 dBm Nominal P1dB
37dBm OTOI typical
Typical 15dB Input/Output RL
Bias 6 - 7V @ 480 mA
On-chip power detector diode
Chip Dimensions 2.641 mm x 1.480 mm
TGA1135B Fixtured Amplifier Typical Small Signal Data
Wafer 993150303, 6V/540mA
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
S21 (
d
B
)
TGA1135B Nominal Output Power
Wafer 993150303, Idq=540mA
27
27.5
28
28.5
29
29.5
30
30.5
31
31.5
32
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Frequency (GHz)
P
1
dB (dBm)
Note: 1 dB of
compression not
reached on some parts
at 27, 27.5 GHz
VD = 6V
VD = 7V
The TriQuint TGA1135B-SCC is a balanced two-
stage HPA MMIC design using TriQuint's proven
0.25 um Power pHEMT process. The
TGA11135B is designed to support a variety of
millimeter wave applications including point-to-
point digital radio and LMDS/LMCS.
The balanced configuration two stage design
consists of a pair of 600um input devices driving a
4 x 600um output stage. Power combining is
achieved with on-chip Lange couplers.
The TGA1135B-SCC provides 29 dBm nominal
output power at 1dB compression across
18 - 27GHz. Typical small signal gain is 14 dB
across the band. Input and output return loss is
typically -15dB.
An on-chip power detector and reference diode
may be used for power monitoring/control and
bias control loops.
The TGA1135B-SCC requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance
compliance. The device is available in chip form.
Product Description
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
January 21, 2002
2
TGA1135B-SCC
TABLE I
MAXIMUM RATINGS
SYMBOL
PARAMETER 4/
VALUE
NOTES
V
+
POSITIVE SUPPLY VOLTAGE
8 V
I
+
POSITIVE SUPPLY CURRENT
720 mA
1/
I
-
NEGATIVE SUPPLY CURRENT
28.2 mA
P
IN
INPUT CONTINUOUS WAVE POWER
23 dBm
P
D
POWER DISSIPATION
5.0 W
T
CH
OPERATING CHANNEL TEMPERATURE
150
0
C
2/ 3/
T
M
MOUNTING TEMPERATURE
(30 SECONDS)
320
0
C
T
STG
STORAGE TEMPERATURE
-65 to 150
0
C
1/
Total current for all stages.
2/
These ratings apply to each individual FET.
3/
Junction operating temperature will directly affect the device median time to failure (T
M
). For maximum life,
it is recommended that junction temperatures be maintained at the lowest possible levels.
4/
These ratings represent the maximum operable values for the device
.
TABLE II
DC SPECIFICATIONS (100%)
(T
A
= 25
C + 5 C)
NOTES
SYMBOL
TEST CONDITIONS 2/
LIMITS
UNITS
MIN
MAX
I
DSS1
STD
60
282
mA
G
M1
STD
132
318
mS
1/
|V
P1
|
STD
0.5
1.5
V
1/
|V
P2
|
STD
0.5
1.5
V
1/
|V
P3-6
|
STD
0.5
1.5
V
1/
|V
BVGD1
|
STD
13
30
V
1/
|V
BVGS1
|
STD
13
30
V
1/
V
P
, V
BVGD
, and V
BVGS
are negative.
2/
The measurement conditions are subject to change at the manufacture's discretion (with appropriate
notification to the buyer).
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
January 21, 2002
3
TGA1135B-SCC
TABLE IV
RF SPECIFICATIONS
(T
A
= 25
C + 5C)
NOTE
TEST
MEASUREMENT
CONDITIONS
VALUE
UNITS
7V @ 460mA
MIN
TYP
MAX
SMALL-SIGNAL
GAIN MAGNITUDE
18 27 GHz
12
14
dB
POWER OUTPUT
AT 1 dB GAIN
COMPRESSION
18 27 GHz
27
29
dBm
INPUT RETURN LOSS
MAGNITUDE
18 27 GHz
10
15
dB
OUTPUT RETURN LOSS
MAGNITUDE
18 27 GHz
10
15
dB
1/
OUTPUT THIRD ORDER
INTERCEPT
34.5
37
dBm
1/
Output Third Order Intercept point minimum performance is measured at 18.0, 23.0, 26.0 GHz, fixed voltage,
Vd = 7.0V, Vg = Vg1 value passed from S-parameter testing. Power in per tone = -2.0 dBm. Separation =
0.010 GHz.
TABLE V
RELIABILITY DATA
PARAMETER
BIAS CONDITIONS
P
DISS
R
JC
T
CH
T
M
V
D
(V)
I
D
(mA)
(W)
(C/W)
(
C)
(HRS)
R
JC
Thermal resistance
(channel to backside
of carrier plate)
6
540
3.24
23.09
144.8
1.6E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at
70
C baseplate temperature. Worst case condition with no RF applied, 100% of DC power
is dissipated.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
January 21, 2002
4
,
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
-5
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
S11 (
d
B
)
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
S21 (
d
B
)
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
-5
15 16 17 18 19
20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
S22 (
d
B
)
S22
S11
S21
Measured small signal data
6V, 540mA
TGA1135B-SCC
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
January 21, 2002
5
Typical Output TOI Measured Data
P1dB Measured Data for ~ 18K devices
0
50
100
150
200
250
300
350
400
450
500
30
31
32
33
34
35
36
37
38
39
40
41
42
Samp
les
wafer 1
wafer 2
wafer 3
Pin=-2dBm,
Vd=7V/460mA,
freq=26GHz
24
25
26
27
28
29
30
31
32
18
20
22
24
26
28
Frequency (GHz)
Pout
@1dB Compression (
d
Bm)
5th
25th
50th
75th
95th
TGA1135B-SCC
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
January 21, 2002
6
REF3
GND
VG1
VG2
GND
DQ
PWR
DET
Q1b
Q2b
RF IN
VD
Q1a
Q2a
600
m
600
m
1200
m
1200
m
VG1
VG2
GND
DQ
VD
REF2
REF1
RF OUT
DET
OUT
Reference
diode 1
Reference
diode 2
Note: If drain bias is from one side
only, maximum Id is 440mA
Note: no DC current
allowed into the "DQ" pad
DC Schematic
TGA1135B-SCC
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
January 21, 2002
7
Dimensions in mm
RF I/O Pad: 200x100 mm
DC Pads: 105x105 mm
Die Area: 3.909 mm
2
1.
2
5
3: V
D
(
180x
100
m)
0.000
0.686
RF IN
0.
0
0
0
V
G
2: 0
.
612
DQ
: 0
.
875
0.833
PWR DET
(175x100
m)
RE
F
3:
0.
22
0
RE
F
2:
2.
54
3
0.098
RE
F
1:
2.
36
0
VD
:
1
.
25
3
(
180x
100
m)
0.373
RF OUT
1.480
2.
6
4
1
0.
6
12: V
G
2
0.
8
75: DQ
0.
0
9
5
DE
T
OUT
2.
5
4
3
TGA1135B-SCC
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
January 21, 2002
8
TGA1135B built-in power detector
On-chip diode functions as envelope detector
External coupler and DC bias required
External coupler
(-20dB)
EG1135B
50
C=2pF
Video out
(V
det
)
10K
External
DC bias
RF
OUT
RF
OUT
V
bias
100pF
100pF
TGA1135B with external test coupler
(amplifier bias connections not shown)
V
det
RF
IN
RF
OUT
EG1135B measured detector voltage offset vs output power with
20dB coupler: Vb=0.8V, f = 20GHz, Coupler loss is uncalibrated,
10K
load
0.01
0.1
1
10
8
10
12
14
16
18
20
22
24
26
28
30
32
Pout (dBm)
D
e
tecto
r
vo
l
t
ag
e (V)
TGA1135B-SCC
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
January 21, 2002
9
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
100pF
Vg
Input TFN
Output TFN
Vd
Vd
100pF
Vg (optional)
100pF
0.01
F
Notes:
1. 1
F capacitor on gate, drain lines not
shown but required
2. 0.01
F capacitor may be connected to
"DQ" port as shown, or may be included
on drain line
3. Vg connection is recommended on
both sides for devices operating at or
above P1dB
0.01
F
0.01
F
0.01
F
100pF
DQ
DQ
TGA1135B-SCC
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
January 21, 2002
10
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA1135B-SCC
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