Advance Product Information
August 27, 2003
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
33-36 GHz 2W Power Amplifier TGA1141-EPU
Primary Applications
Military Radar Systems
Ka Band Sat-Com
Point-to-Point Radio
Key Features
0.25 um pHEMT Technology
17 dB Nominal Gain
31 dBm Pout @ P1dB,
Psat 33dBm @ 6V , 34dBm @7V
Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A
at Psat
Chip Dimensions 4.13 x 3.30 x 0.1 mm
25
26
27
28
29
30
31
32
33
34
35
32
33
34
35
36
37
Frequency (GHz)
P
out
(
d
Bm
)
P1dB_ave
Psat_ave
10
12
14
16
18
20
22
30
32
34
36
38
40
Frequency (GHz)
Sm
all-signal Gain (dB)
Bias Conditions: Vd = 6 V, Id = 880 mA
Advance Product Information
August 27, 2003
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA1141-EPU
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
+
Positive Supply Voltage
8 V
2/
V
-
Negative Supply Voltage Range
-5V TO 0V
I
+
Positive Supply Current
1.76 A
2/
| I
G
|
Gate Supply Current
70 mA
P
D
Power Dissipation
9.4 W
2/, 3/
P
IN
Input Continuous Wave Power
27 dBm
2/
T
CH
Operating Channel Temperature
150
C
4/, 5/
T
M
Mounting Temperature (30 seconds)
320
C
T
STG
Storage Temperature
-65
C to 150
C
1/
These ratings represent the maximum operable values for this device.
2/
Current is defined under no RF drive conditions. Combinations of supply voltage, supply
current, input power, and output power shall not exceed P
D
.
3/
When operated at this power dissipation with a base plate temperature of 70
C, the median
life is 1 E+6 hours.
4/
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
5/
These ratings apply to each individual FET.
TABLE II
DC PROBE TESTS
(T
A
= 25
C, Nominal)
Symbol
Parameter
Minimum
Maximum
Value
Idss
Saturated Drain Current
40
188
mA
Gm
Transconductance
88
212
mS
V
P
Pinch-off Voltage
-1.5
-0.5
V
B
VGS
Breakdown Voltage gate-
source
-30
-8
V
B
VGD
Breakdown Voltage gate-
drain
-30
-8
V
Advance Product Information
August 27, 2003
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE III
ON-WAFER RF PROBE CHARACTERISTICS
(T
A
= 25
C, Nominal)
V
d
= 6 V, I
d
= 880 mA
Limit
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
Gain
Small Signal
Gain
F = 33 36 GHz
F = 34 35.2 GHz
16
17
---
---
dB
IRL
Input Return
Loss
F = 33 36 GHz
---
-8
---
dB
ORL
Output Return
Loss
F = 33 36 GHz
---
-6.5
---
dB
PWR
Output Power @
P
in
= +21 dBm
F = 34 34.6 Hz
F = 35.2 GHz
32
31.5
---
---
dBm
I
pk
Peak LS Drain
Current @
P
in
= 21 dBm
F = 34 35.2 GHz
---
1.6
A
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
o
C)
R
JC
(
C/W)
T
M
(HRS)
R
JC
Thermal
Resistance
(channel to backside of
carrier)
Vd = 6 V
Id = 880 mA
Pdiss = 5.3 W
115
8.5
2.6 E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
o
C baseplate temperature. Worst case condition with no RF applied, 100% of
DC power is dissipated.
TGA1141-EPU
Advance Product Information
August 27, 2003
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Measured Fixtured Data
Bias Conditions: Vd = 6V, Id = 880 mA
10
12
14
16
18
20
22
30
32
34
36
38
40
Frequency (GHz)
Sm
a
ll-
s
i
gna
l Ga
in (
d
B)
-14
-12
-10
-8
-6
-4
-2
0
30
32
34
36
38
40
Frequency (GHz)
Input & O
u
tput Return Loss (dB)
S11
S22
TGA1141-EPU
Advance Product Information
August 27, 2003
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
30
30.5
31
31.5
32
32.5
33
33.5
34
34.5
35
32
33
34
35
36
37
Frequency (GHz)
P
out
(d
Bm)
+6V
+7V
(
)
10
12
14
16
18
20
22
24
26
28
30
32
33
34
35
36
37
Frequency (GHz)
PAE (
%
)
PAE@P1dB
PAE@Psat
25
26
27
28
29
30
31
32
33
34
35
32
33
34
35
36
37
Frequency (GHz)
Pout (dBm
)
P1dB_ave
Psat_ave
Psat vs Vd
PAE
Pout
TGA1141-EPU
Measured Fixtured Data
Bias Conditions: Vd = 6V, Id = 880 mA
Advance Product Information
August 27, 2003
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Pout vs. Temperature Data Summary Matrix:
T= -26C
T= +25C
T= +100C
Freq (GHz)
min Pout
mean Pout min Pout mean Pout min Pout
mean Pout
34
33
33
32.7
32.8
31.9
32
34.6
32.8
32.9
32.5
32.6
31.7
31.8
35.2
32.5
32.7
32.3
32.4
31.5
31.6
Ave. Pout (dBm)
32.8
32.9
32.5
32.6
31.7
31.8
15
17
19
21
23
25
27
29
31
33
35
0
5
10
15
20
25
Pin (dBm )
P
out (dBm)
10
11
12
13
14
15
16
17
18
19
20
Ga
i
n
(dB)
Pout +25C
Pout +100C
Pout -26C
Gain +25C
Gain +100C
Gain -26C
TGA1141-EPU
Measured Fixtured Data
Bias Conditions: Vd = 6V, Id = 880 mA
Advance Product Information
August 27, 2003
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA1141-EPU
Advance Product Information
August 27, 2003
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Mechanical Drawing
TGA1141-EPU
Advance Product Information
August 27, 2003
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA1141-EPU
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
C
(for 30 sec max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200
C.
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