TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
1
Not Recommended for New Designs.
TriQuint Recommends the TGA2503-EPU be used for New Designs.
13.75 - 15 GHz 2 Watt Power Amplifier TGA1152-SCC
Key Features
0.5 um pHEMT Technology
34 dB Nominal Gain
33 dBm Nominal Pout @ Pin = 3 dBm
OTOI 39dBm Typical
Bias 7V @ 682 mA
Chip Dimensions 1.390mm x 2.495mm
Primary Applications
Ku Band Sat-Com
Point-to-Point Radio
The TriQuint TGA1152-SCC MMIC is a
34dB gain, 2W, 13.75 15 GHz HPA,
which is ideally suited for current Ku-
Band satellite ground terminal
applications. Utilizing TriQuint's robust
0.5um power pHEMT process coupled
with the latest High Density Interconnect
(HDI) technology. The TGA1152-SCC
provides the high power transmit function
in an extremely compact (< 3.5mm
2
) chip
footprint.
The combination of a high-yield process,
electrical performance, and compact die
size is exactly what is required to support
the aggressive pricing targets required for
low-cost transmit modules. Each device
is 100% DC and RF tested on wafer to
ensure performance compliance. The
device is available in chip form.
March 19, 2001
S21
S11
S22
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
S
21 (dB)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
S
11,
S
22 (dB)
S21
S11
S22
29
29.5
30
30.5
31
31.5
32
32.5
33
33.5
34
34.5
12.5
13
13.5
14
14.5
15
15.5
Frequency (GHz)
Pow
e
r (dBm
)
Psat
P2dB
P1dB
Product Description
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
2
Not Recommended for New Designs.
TriQuint Recommends the TGA2503-EPU be used for New Designs.
MAXIMUM RATINGS
SYMBOL
PARAMETER 5/
VALUE
NOTES
V
+
POSITIVE SUPPLY VOLTAGE
8 V
4/
V
-
NEGATIVE SUPPLY VOLTAGE RANGE
-5V TO 0V
I
+
POSITIVE SUPPLY CURRENT (QUIESCENT)
1.023 A
4/
| I
G
|
GATE SUPPLY CURRENT
35.2 mA
P
IN
INPUT CONTINUOUS WAVE POWER
21.4 dBm
P
D
POWER DISSIPATION
9.404 W
3/ 4/
T
CH
OPERATING CHANNEL TEMPERATURE
150
0
C
1/ 2/
T
M
MOUNTING TEMPERATURE
(30 SECONDS)
320
0
C
T
STG
STORAGE TEMPERATURE
-65 to 150
0
C
1/
These ratings apply to each individual FET.
2/
Junction operating temperature will directly affect the device median time to failure (T
M
). For maximum life,
it is recommended that junction temperatures be maintained at the lowest possible levels.
3/
When operated at this bias condition with a base plate temperature of 70
0
C, the median life is reduced from
8.9E+6 to 4.2 E+4 hours.
4/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
5/
These ratings represent the maximum operable values for this device.
TGA1152-SCC
THERMAL INFORMATION*
Parameter
Test Conditions
T
CH
(
o
C)
R
qJC
(
C/W)
T
M
(HRS)
R
qJC
Thermal Resistance
(channel to backside of
carrier)
Vd = 7V
I
D
= 682 mA
Pdiss = 4.774 W
125.74
11.67
8.9E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at
70
C baseplate temperature. Worst case condition with no RF applied, 100% of DC power
is dissipated.
* The thermal information is a result of a detailed thermal model
.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
3
Not Recommended for New Designs.
TriQuint Recommends the TGA2503-EPU be used for New Designs.
DC SPECIFICATIONS (100%)
(T
A
= 25
C + 5 C)
NOTES
SYMBOL
TEST CONDITIONS 2/
LIMITS
UNITS
MIN
MAX
I
DSS
STD
Info only
200
mA
Gm
STD
Info only
252
mS
1/
|V
P1
|
STD
0.5
1.5
V
1/
|V
P2
|
STD
0.5
1.5
V
1/
|V
P3
|
STD
0.5
1.5
V
1/
|V
BVGD1-3
|
STD
11
30
V
1/
|V
BVGD4
|
STD
11
30
V
1/
|V
BVGS
|
STD
11
30
V
1/
V
P
, V
BVGD
, and V
BVGS
are negative.
2/
The measurement conditions are subject to change at the manufacture's discretion
RF SPECIFICATIONS
(T
A
= 25
C + 5C)
TEST
MEASUREMENT
CONDITIONS
VALUE
UNITS
7V @ 682mA +/- 5%
MIN
TYP
MAX
SMALL-SIGNAL
GAIN MAGNITUDE
FREQ = 13.75 15 GHz
29
34
-
dB
POWER OUTPUT
at PIN= +3 dBm
FREQ = 13.75 14.5 GHz
31.5
33
-
dBm
INPUT RETURN LOSS
MAGNITUDE
FREQ = 13.75 15 GHz
-
-12
-
dB
OUTPUT RETURN LOSS
MAGNITUDE
FREQ = 13.75 15 GHz
-
-12
-
dB
GAIN FLATNESS
FREQ = 14 14.5 GHz
FREQ = 13.5 14.5 GHz
-
+/- 0.25
+/- 1.0
-
dB
dB
IMD3@SCL = P1dB 10dB FREQ = 13.5 15 GHz
-
35
-
dBc
OIP3 (P1dB 10dB)
FREQ = 13.5 15 GHz
-
39
-
dBc
TGA1152-SCC
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
4
Not Recommended for New Designs.
TriQuint Recommends the TGA2503-EPU be used for New Designs.
29.5
30
30.5
31
31.5
32
32.5
33
33.5
13
13.5
14
14.5
15
15.5
Frequency (GHz)
P
out@P
in=1dBm
-40C
25C
70C
TGA1152-SCC Over Temperature Measured Performance
6V @ 680mA
F=14GHz, Vd=7V/680mA, tone separation=10MHz
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
10
12
14
16
18
20
22
24
26
28
30
Fundamental output power/tone (dBm)
M
e
a
n
IM
D
3
level (
d
Bm)
TGA1152-SCC IMD3 Performance
TGA1152-EPU
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
5
Not Recommended for New Designs.
TriQuint Recommends the TGA2503-EPU be used for New Designs.
Output TFN
Vd = +7V
100pF
0.01
mF
Notes:
1. 0.1
mF capacitors on gate, drain
lines not shown but used
Input TFN
Cu-moly carrier plate (20mil thick)
100pF
Vg
0.01
mF
50
W
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommended Assembly Diagram
TGA1152-SCC
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
6
Not Recommended for New Designs.
TriQuint Recommends the TGA2503-EPU be used for New Designs.
TGA1152-SCC
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
7
Not Recommended for New Designs.
TriQuint Recommends the TGA2503-EPU be used for New Designs.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA1152-SCC
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C.
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200C.
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