TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
1
December 13, 2001
36 to 40 GHz 1W Power Amplifier TGA1171-SCC
Key Features and Performance
0.25 um pHEMT Technology
36-40 GHz Frequency Range
29 dBm Nominal Pout @ P1dB, 38 GHz
14 dB Nominal Gain
OTOI 36 dBm at 40 GHz typical
Bias 6-7 V @ 500 mA
Chip Dimensions: 2.863 mm x 2.740 mm
x 0.1016 mm
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Radio
Product Description
The TriQuint TGA1171-SCC is a two-stage
PA MMIC design using TriQuint's proven 0.25
m Power pHEMT process to support a
variety of millimeter wave applications
including point-to-point digital radio and point-
to-multipoint systems.
The balanced design consists of four 400
m
input devices driving eight 400
m output
devices.
The TGA1171 provides 29 dBm of output
power at 1 dB gain compression and >30
dBm saturated output power across 36-40
GHz with a typical small signal gain of 14 dB.
Typical Input/Output RL is typically greater
than 12-15 dB across the band.
The TGA1171 requires minimal off-chip
components. Each device is 100% DC and
RF tested on-wafer to ensure performance
compliance. The device is available in chip
form.
TGA1171 Fixture Data
+7V, 500mA, 25C
24
25
26
27
28
29
30
31
32
33
34
36.0
36.5
37.0
37.5
38.0
38.5
39.0
39.5
40.0
Frequency (GHz)
Out
put
P1
dB (
d
Bm)
TGA1171 Fixture Data
+7V, 500mA, 25C
-25
-20
-15
-10
-5
0
5
10
15
20
33
34
35
36
37
38
39
40
41
42
Frequency (GHz)
Ga
i
n
a
n
d
Re
t
u
r
n
L
o
s
s
(
d
B)
S21
S11
S22
TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
2
December 13, 2001
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 5/
Value
Notes
V
+
Positive Supply Voltage
8 V
4/
V
-
Negative Supply Voltage Range
-5V TO 0V
I
+
Positive Supply Current (Quiescent)
9 6 0 mA
4/
| I
G
|
Gate Supply Current
56.32 mA
P
IN
Input Continuous Wave Power
27 dBm
4/
P
D
Power Dissipation
5.25 W
3/ 4/
T
CH
Operating Channel Temperature
150
0
C
1/ 2/
T
M
Mounting Temperature
(30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings apply to each individual FET.
2/
Junction operating temperature will directly affect the device median time to failure (T
M
).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
3/
When operated at this bias condition with a base plate temperature of 70
0
C, the median
life is reduced from 9.5 E+6 to 6.1 E+5 hours.
4/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
5/
These ratings represent the maximum operable values for this device.
TGA1171-SCC
TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
3
December 13, 2001
TABLE II
DC PROBE TEST
(TA = 25
C
5
C)
Symbol
Parameter
Minimum
Maximum
Unit
Idss
(Q3-6)
Saturated Drain Current
160
752
mA
Gm
(Q3-6)
Transconductance
352
848
mS
V
P
Pinch-off Voltage
-1.5
-0.5
V
BVGS
(Q3-6)
Breakdown Voltage Gate-
Source
-30
-11
V
BVGD
(Q3-6)
Breakdown Voltage Gate-
Drain
-30
-11
V
TABLE III
AUTOPROBE FET PARAMETER MEASUREMENT CONDITIONS
FET Parameters
Test Conditions
I
DSS
:
Maximum drain current (I
DS
) with gate voltage
(V
GS
) at zero volts.
V
GS
= 0.0 V, drain voltage (V
DS
) is swept from 0.5 V up to
a maximum of 3.5 V in search of the maximum value of
I
DS
; voltage for I
DSS
is recorded as VDSP.
G
m
: Transconductance;
I
DSS
-
IDS 1
(
)
VG1
For all material types, V
DS
is swept between 0.5 V and
VDSP in search of the maximum value of I
ds
. This
maximum I
DS
is recorded as IDS1. For Intermediate and
Power material, IDS1 is measured at V
GS
= VG1 = -0.5 V.
For Low Noise, HFET and pHEMT material,
V
GS
= VG1 = -0.25 V. For LNBECOLC, use
V
GS
= VG1 = -0.10 V.
V
P
:
Pinch-Off Voltage; V
GS
for I
DS
= 0.5 mA/mm of
gate width.
V
DS
fixed at 2.0 V, V
GS
is swept to bring I
DS
to 0.5 mA/mm.
V
BVGD
:
Breakdown Voltage, Gate-to-Drain; gate-to-drain
breakdown current (I
BD
) = 1.0 mA/mm of gate width.
Drain fixed at ground, source not connected (floating),
1.0 mA/mm forced into gate, gate-to-drain voltage (V
GD
)
measured is V
BVGD
and recorded as BVGD; this cannot be
measured if there are other DC connections between gate-
drain, gate-source or drain-source.
V
BVGS
:
Breakdown Voltage, Gate-to-Source; gate-to-
source breakdown current (I
BS
) = 1.0 mA/mm of gate
width.
Source fixed at ground, drain not connected (floating),
1.0 mA/mm forced into gate, gate-to-source voltage (V
GS
)
measured is V
BVGS
and recorded as BVGS; this cannot be
measured if there are other DC connections between gate-
drain, gate-source or drain-source.
TGA1171-SCC
TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
4
December 13, 2001
TABLE V
THERMAL INFORMATION*
Parameter
Test Conditions
T
CH
(
o
C)
R
JC
(
C/W)
T
M
(HRS)
R
JC
Thermal Resistance
(channel to backside of
carrier)
Vd = 7V
I
D
= 500 mA
Pdiss = 3.5 W
125.03
15.79
9.5 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier
at 70
C baseplate temperature. Worst case condition with no RF applied, 100% of DC
power is dissipated.
* This information is a result of a thermal model analysis.
TABLE IV
RF WAFER CHARACTERIZATION TEST
(T
A
= 25
C + 5
C)
(Vd = 7V, Id = 500 mA
5%)
Parameter
Unit
Min
Typical
Max
Frequency
GHz
36
40
Output P1dB
dBm
26
29
Small Signal Gain
dB
12
14
Input Return Loss
dB
-15
Output Return Loss
dB
-15
Output TOI
dBm
36
TGA1171-SCC
TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
5
December 13, 2001
TGA1171-SCC
24
25
26
27
28
29
30
31
32
36
36.5
37
37.5
38
38.5
39
39.5
40
Frequency (GHz)
Pout
@
P1
dB
(
d
Bm
)
-40
-35
-30
-25
-20
-15
-10
36
36.5
37
37.5
38
38.5
39
39.5
40
Frequency (GHz)
Inp
ut
R
e
t
u
r
n
L
o
s
s
(
d
B
)
Data Based on the 50th percentile On-Wafer RF
Probe Test Results, Sample Size = 13971 Devices
Bias Conditions: Vd = 7 V, Id = 500 mA
TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
6
December 13, 2001
TGA1171-SCC
10
11
12
13
14
15
16
36
36.5
37
37.5
38
38.5
39
39.5
40
Frequency (GHz)
G
a
in (
d
B
)
-26
-24
-22
-20
-18
-16
-14
-12
-10
36
36.5
37
37.5
38
38.5
39
39.5
40
Frequency (GHz)
O
u
t
p
u
t
Re
t
u
rn
L
o
s
s
(
d
B)
Data Based on the 50th percentile On-Wafer RF
Probe Test Results, Sample Size = 13971 Devices
Bias Conditions: Vd = 7 V, Id = 500 mA
TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
7
December 13, 2001
Mechanical Characteristics
Dimensions in mm
RF Pads: 130x100
m
DC Pads: 100x100
m
Die Area: 7.845 mm
2
0.000
1.050
1.690
0.
0
0
0
0.
6
2
5
1.
3
8
5
2.
2
6
0
2.740
0.
2
7
0
2.
4
1
5
2.
6
6
0
2.
8
6
3
0.840
1.900
TGA1171-SCC
1
1
TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
8
December 13, 2001
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
.01uF, 2 PL
.01uF, 2 PL
100pF, 2 PL
100pF, 2 PL
Vg
Vd
Vg
Vd
RF in
RF out
Vg
Vd
Vg
Vd
Add additional 1uF on drain bias lines for lab testing
Add additional 1uF on drain bias lines for lab testing
5 chisel bonds
or 3 mil ribbon
2PL
TGA1171-SCC
TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
9
December 13, 2001
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
C.
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200
C.
TGA1171-SCC
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