TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 16, 2000
1
Ka Band Low Noise Amplifier TGA1307-EPU
Key Features and Performance
0.25um pHEMT Technology
23-29 GHz Frequency Range
3.1 dB Nominal Noise Figure 28GHz
17 dB Nominal Gain
OTOI > 22dBm
5V, 50 mA Self-Bias
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Communications
Typical NF @ 25C
Typical Gain @ 25C
EG1307 Fixtured Small Signal Data, Wafer 991880601
Vd = 5V, Id1
45mA
0
5
10
15
20
25
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
R/C 9_21
R/C 40_35
R/C 47_31
R/C 44_15
R/C 50_30
Vd = 5V, Id1
45mA
0
1
2
3
4
5
6
7
8
9
10
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
R/C 35_35
R/C 50_50
R/C 59_59
R/C 70_70
R/C 75_75
Chip Dimensions 2.54 mm x 1.15 mm
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 16, 2000
EG1307 Fixtured Small Signal Data, Wafer 991880603
Vd = 5V, Id1
45mA
-12
-10
-8
-6
-4
-2
0
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
R/C 50_32
R/C 59_30
R/C 70_30
R/C 35_31
R/C 75_15
EG1307 Fixtured Small Signal Data, Wafer 991880603
Vd = 5V, Id1
45mA
0
5
10
15
20
25
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
R/C 50_32
R/C 59_30
R/C 70_30
R/C 35_31
R/C 75_15
EG1307 Fixtured Small Signal Data, Wafer 991880603
Vd = 5V, Id1
45mA
-80
-70
-60
-50
-40
-30
-20
-10
0
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
R/C 50_32
R/C 59_30
R/C 70_30
R/C 35_31
R/C 75_15
EG1307 Fixtured Small Signal Data, Wafer 991880603
Vd = 5V, Id1
45mA
-12
-10
-8
-6
-4
-2
0
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
R/C 50_32
R/C 59_30
R/C 70_30
R/C 35_31
R/C 75_15
Typical Small Signal S-parameters at 25C.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA1307
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 16, 2000
EG1307 S11 Lot 9918806 wafer 2
5V R/C 60 24
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Temp: -60
Temp: -25
Temp: 0
Temp: 25
Temp: 50
Temp: 75
EG1307 S21 Lot 9918806 wafer 2
5V R/C 60 24
0
5
10
15
20
25
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Temp: -60
Temp: -25
Temp: 0
Temp: 25
Temp: 50
Temp: 75
EG1307 S12 Lot 9918806 wafer 2
5V R/C 60 24
-70
-60
-50
-40
-30
-20
-10
0
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Temp: -60
Temp: -25
Temp: 0
Temp: 25
Temp: 50
Temp: 75
EG1307 S22 Lot 9918806 wafer 2
5V R/C 60 24
-12
-10
-8
-6
-4
-2
0
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Temp: -60
Temp: -25
Temp: 0
Temp: 25
Temp: 50
Temp: 75
Small Signal S-parameters over temperature.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA1307
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 16, 2000
Vd = 5V, Id1
45mA
0
1
2
3
4
5
6
7
8
9
10
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
R/C 35_35
R/C 50_50
R/C 59_59
R/C 70_70
R/C 75_75
Typical Noise Figure - 5 devices
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA1307
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 16, 2000
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TGA1307-EPU - Mechanical Drawing
TGA1307
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 16, 2000
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TGA1307-EPU - Recommended Assembly Drawing
TGA1307
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 16, 2000
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA1307
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