TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
1
Ka Band Low Noise Amplifier TGA1319A
Key Features and Performance
0.15um pHEMT Technology
21-27 GHz Frequency Range
2 dB Nominal Noise Figure
19 dB Nominal Gain
12 dBm Pout
3V, 45 mA
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Communications
Typical NF @ 25C
Typical Gain @ 25C
Chip Dimensions 1.985 mm x .980 mm
10
12
14
16
18
20
22
24
26
28
30
15
16
17
18
19
20
21
22
23
24
25
26
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
15
16
17
18
19
20
21
22
23
24
25
26
27
-20
-15
-10
-5
0
15
16
17
18
19
20
21
22
23
24
25
26
-20
-16
-12
-8
-4
0
15
16
17
18
19
20
21
22
23
24
25
26
Typical S22 @ 25C
Typical S11 @ 25C
Preliminary Data, 2 Fixtured samples @ 25C
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TGA1319A - Recommended Assembly Drawing
TGA1319A
100
pF
100
pF
100
pF
100
pF
Vd=3V
Vg1
Vg2
RFin
RFout
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA1319A
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