TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 14, 2001
1
Ka Band Low Noise Amplifier TGA1319B-EPU
Key Features and Performance
0.15um pHEMT Technology
21-27 GHz Frequency Range
1.75 dB Nominal Noise Figure
19 dB Nominal Gain
8dBm Pout
3V, 45 mA Self -biased
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Communications
NF @ 25C
Gain @ 25C
Chip Dimensions 2.237 mm x 1.144 mm
S22 @ 25C
S11 @ 25C
Preliminary Data, 6-10 Fixtured samples @ 25C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
Frequency (GHz)
two 1-mil ball bonds at RF interconnects
0
5
10
15
20
25
1
3
6
8
11
13
16
18
21
23
26
28
31
33
36
38
Frequency (GHz)
S21
(dB)
-25
-20
-15
-10
-5
0
5
1
3
6
8
11
13
16
18
21
23
26
28
31
33
36
38
Frequency (GHz)
S11
(dB)
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
1
3
6
8
11
13
16
18
21
23
26
28
31
33
36
38
Fre que ncy (GHz)
S22
(dB)
NF
(dB)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 14, 2001
MAXIMUM RATINGS
SYMBOL
PARAMETER 4/
VALUE
NOTES
V
+
POSITIVE SUPPLY VOLTAGE
5 V
I
+
POSITIVE SUPPLY CURRENT
60 mA
1/
I
-
NEGATIVE GATE CURRENT
5.28 mA
P
IN
INPUT CONTINUOUS WAVE POWER
15 dBm
P
D
POWER DISSIPATION
.3 W
T
CH
OPERATING CHANNEL TEMPERATURE
150
0
C
2/ 3/
T
M
MOUNTING TEMPERATURE
(30 SECONDS)
320
0
C
T
STG
STORAGE TEMPERATURE
-65 to 150
0
C
1/
Total current for all stages.
2/
These ratings apply to each individual FET.
3/
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
4/
These ratings represent the maximum operable values for the device.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
2
ON-WAFER RF PROBE CHARACTERISTICS
(T
A
= 25
C 5C)
V
d
= 3 V
Limit
Symbol Parameter
Test Condition
Min
Typ
Max
Units
Gain
Small Signal
Gain
F = 21 26 GHz
F = 27 GHz
18.5
17
---
---
dB
NF
Noise Figure
F = 21 26.5 GHz
---
2
dB
PWR
Output Power
@ P1dB
F = 21 GHz
F = 22 GHz
F = 23 24 GHz
F = 25 26 GHz
F = 27 GHz
5
6
7
8
10
---
---
---
---
---
dBm
TGA1319B-EPU
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 14, 2001
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TGA1319B - Recommended Assembly Drawing
Vd=3V
100
pF
100
pF
100
pF
Gnd
3
RF in
RF out
TGA1319B-EPU
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 14, 2001
Mechanical Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
4
TGA1319B-EPU
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 14, 2001
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
5
TGA1319B-EPU
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