TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
1
Ka Band Wideband LNA/Driver TGA1319C
Key Features and Performance
0.15um pHEMT Technology
16-30 GHz Frequency Range
2.25 dB Nominal Noise Figure midband
21 dB Nominal Gain
14 dBm Pout
5V, 60 mA
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Communications
Typical NF @ 25C
Typical Gain @ 25C
Chip Dimensions 2.169 mm x .904 mm
Typical S22 @ 25C
Typical S11 @ 25C
0
5
10
15
20
25
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Frequency ( GHz)
Gain
(
d
B)
-30
-25
-20
-15
-10
-5
0
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Frequency ( GHz)
Input
R
L
(
d
B
)
-30
-25
-20
-15
-10
-5
0
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Frequency ( GHz)
O
u
t
p
u
t
RL
(
d
B)
1 .5
2
2 .5
3
2 1
2 1 .5
2 2
2 2 .5
2 3
2 3 .5
2 4
2 4 .5
2 5
2 5 .5
2 6
F r e q u e n c y
NF
(d
B)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TGA1319C- Recommended Assembly Drawing
TGA1319C
RFin
RFout
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA1319C
PDF 
ZIP