TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
1
rev 11/10/98
2 -20 GHz Wideband AGC Amplifier TGA1342-EPU
Key Features and Performance
0.5 um MESFET Technology
9 dB Nominal Gain
3.5 dB NF Typical Midband
17.5 dBm Nominal Pout @ P1dB
Bias 5-8V @ 60 mA
Dimensions 3.378mm x 2.032mm
Primary Applications
Wideband Gain Block Amplifier
Wideband Low Noise Amplifier
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Noise Figure (dB)
VD=6v Id=60ma Temp=25C
1.0
2.0
3.0
4.0
5.0
6.0
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Noise Figure (dBf)
S21 Gain (dB)
VD=5v Id=60ma Temp=25C
4.0
6.0
8.0
10.0
12.0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
G
a
in (dB)
S11 Input Return Loss (dB)
VD=5v Id=60ma Temp=25C
-40.0
-30.0
-20.0
-10.0
0.0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Input Return Loss (dB)
S22 Output Return Loss (dB)
VD=5v Id=60ma Temp=25C
-40.0
-30.0
-20.0
-10.0
0.0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
O
u
tput Return Loss
(dB)
Typical Electrical Characteristics
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
2
rev 11/10/98
Mechanical Characteristics
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
4
rev 11/10/98
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
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