TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Advance Product Information
April 5, 2006
1
6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier TGA2501
Key Features and Performance
34.5 dBm Midband Pout
24 dB Nominal Gain
10 dB Typical Input Return Loss
5 dB Typical Output Return Loss
Bias Conditions: 8V @ 1.2A
0.25 m Ku pHEMT 2MI
Chip dimensions: 4.3 x 2.9 x 0.1 mm
(170 x 115 x 4 mils)
Primary Applications
X-Ku Point-to-Point
ECCM
Preliminary Measured Performance
Bias Conditions: V
D
= 8V I
D
= 1.2A
14
16
18
20
22
24
26
28
30
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
S21 (
d
B)
-20
-15
-10
-5
0
5
10
15
20
S11,
S22 (
d
B)
S21
S11
S22
26
27
28
29
30
31
32
33
34
35
36
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Psat
(
d
Bm)
10
15
20
25
30
35
40
45
50
55
60
PAE@Psat (%)
Psat
PAE
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Advance Product Information
April 5, 2006
2
Fixtured Performance
TGA2501
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
S
21 (dB)
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
S21 (dB)
-40C
0C
+85C
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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April 5, 2006
3
Fixtured Performance
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
S11,
S22 (dB)
S11
S22
0
5
10
15
20
25
30
35
40
-10 -8
-6
-4
-2
0
2
4
6
8
10 12 14 16
Pin (dBm)
Pout (dBm)
1000
1200
1400
1600
1800
2000
2200
2400
2600
Id (mA)
8 GHz
11 GHz
13 GHz
15 GHz
TGA2501
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Advance Product Information
April 5, 2006
4
Fixtured Performance
32.0
32.5
33.0
33.5
34.0
34.5
35.0
35.5
36.0
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Pout (dBm)
P2dB
Psat
10
15
20
25
30
35
40
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
PAE (%)
P2dB
Psat
TGA2501
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Advance Product Information
April 5, 2006
5
Fixtured Performance
35
36
37
38
39
40
41
42
43
44
45
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
TOI (dBm)
-40
-38
-36
-34
-32
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
13
14
15
16
17
18
19
20
21
22
23
24
Pout / Tone (dBm)
IMD3 (dBm)
8 GHz
11 GHz
13 GHz
15 GHz
TGA2501
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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April 5, 2006
6
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 5/
Value
Notes
V
+
Positive Supply Voltage
9 V
4/
V
-
Negative Supply Voltage Range
-5 V to 0 V
I
+
Positive Supply Current (Quiescent)
2.0 A
4/
| I
G
|
Gate Supply Current
52 mA
6/
P
IN
Input Continuous Wave Power
26 dBm
4/
P
D
Power Dissipation
14.4 W
3/ 4/
T
CH
Operating Channel Temperature
150
0
C
1/ 2/
T
M
Mounting Temperature
(30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings apply to each individual FET.
2/
Junction operating temperature will directly affect the device median time to
failure (T
M
). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/
When operated at this bias condition with a base plate temperature of 70
0
C, the
median life is reduced from 1.6E+6 to 5.4E+4 hours.
4/
Combinations of supply voltage, supply current, input power, and output power
shall not exceed P
D
.
5/
These ratings represent the maximum operable values for this device.
6/
This current can be doubled by applying gate bias to both gate pads.
TABLE II
THERMAL INFORMATION
PARAMETER
TEST CONDITION
T
CH
(
q
C)
R
T
jc
(
q
C/W)
MTTF
(HRS)
R
jc
Thermal Resistance
(Channel to Backside)
V
D
= 8 V
I
D
= 1.2 A
P
DIS
= 9.6 W
144.56
7.77
1.6E+6
Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70
C
baseplate temperature. Worst case condition with no RF applied, 100% of DC power is
dissipated.
TGA2501
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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April 5, 2006
7
TABLE III
DC PROBE TEST
(TA = 25
C, nominal)
LIMITS
NOTES
SYMBOL
MIN
MAX
UNITS
1/
I
DSS(Q1)
120
564
mA
1/
G
M (Q1)
264
636
mS
1/, 2/
|V
P
|
0.5
1.5
V
1/, 2/
|V
BVGS
|
13
30
V
1/, 2/
|V
BVGD
|
13
30
V
1/ Q1 is a 1200
m FET
2/ V
P
, V
BVGD
, and V
BVGS
are negative.
TABLE IV
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, nominal)
(Vd = 8V, Id = 1.2A
r
5%)
SYMBOL
PARAMETER
TEST CONDITION
TYPICAL
UNITS
Gain
Small Signal Gain
F = 6-18 GHz
24
dB
IRL
Input Return Loss
F = 6-18 GHz
10
dB
ORL
Output Return Loss
F = 6-18 GHz
5
dB
PWR
Output Power @
Pin=+15dBm
F = 6-18 GHz
34.5
dBm
Note: Table IV Lists the RF Characteristics of typical devices as determined by
fixtured measurements.
TGA2501
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Advance Product Information
April 5, 2006
8
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA2501
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Advance Product Information
April 5, 2006
9
Chip Assembly & Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
1uF or larger capacitors (not shown) should be on the gate and drain line.
TGA2501
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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April 5, 2006
10
Alternative Chip Assembly & Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
1uF or larger capacitors (not shown) should be on the gate and drain line.
TGA2501
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Advance Product Information
April 5, 2006
11
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
C.
(30 seconds maximum)
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200
C.
TGA2501
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