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Электронный компонент: TGA2502

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TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 7, 2006
1
13 - 15 GHz 4W Power Amplifier
TGA2502
Key Features
0.5 um pHEMT Technology
>25 dB Nominal Gain
>36 dBm Nominal Psat
44 dBm Nominal IP3 @ 14 GHz
Bias 7V @ 1.3A Idq, 2.1A under RF drive
Chip Dimensions 2.5mm x 2.7mm x 0.1 mm
Primary Applications
Ku-Band VSAT Transmit
Fixtured Measured Performance
Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm
Bias Conditions: Vd = 7V, Idq = 1.3A
-10
-5
0
5
10
15
20
25
30
12
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Ga
in (
d
B
)
,
q
10
15
20
25
30
35
40
0
3
6
9
12
15
18
Pin (dBm)
P
out (dBm)
13GHz
14GHz
15GHz
15.5GHz
16GHz
16.5GHz
17GHz
Bias Conditions: Vd = 7V, Idq = 1.3A
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 7, 2006
2
TGA2502
TABLE I
MAXIMUM RATINGS 1/
Symbol
Parameter
Value
Notes
V
+
Positive Supply Voltage
8V
I
+
Positive Supply Current
2.3 A
2/
P
D
Power Dissipation
TBD
P
IN
Input Continuous Wave Power
24 dBm
T
CH
Operating Channel Temperature
150
C
3/, 4/
T
M
Mounting Temperature (30 seconds)
320
C
T
STG
Storage Temperature
-65
C to 150
C
1/
These values represent the maximum operable values of this device
2/
Total current for the entire MMIC
3/
These ratings apply to each individual FET
4/
Junction operating temperature will directly affect the device mean time to failure (MTTF). For
maximum life it is recommended that junction temperatures be maintained at the lowest
possible levels
.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 7, 2006
3
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
o
C 5
o
C
)
PARAMETER
TYPICAL
UNITS
Drain Operating Voltage
7
V
Quiescent Current
1.3
A
Small Signal Gain
25
dB
Gain Flatness (Freq=13.5 15 GHz)
0.1
dB/100MHz
Input Return Loss (Linear Small Signal)
16
dB
Output Return Loss (Linear Small Signal)
16
dB
Reverse Isolation
<-50
dB
CW Output Power @ Psat at 14.5Ghz
36
dBm
Power Add Efficiency @ Psat
30
%
P1dB Temperature Coeff. TC (-40 to + 70
0
C)
-0.01
dB/
0
C
TABLE IV
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
T
CH
(
O
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal Resistance
(channel to Case)
Vd = 7 V
Id = 1.3 A
Pdiss = 9.1 W
123
5.8
1.2E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
o
C baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
TGA2502
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 7, 2006
4
Measured Fixtured Data
10
15
20
25
30
35
40
0
3
6
9
12
15
18
Pin (dBm)
Pout (dBm)
13GHz
14GHz
15GHz
15.5GHz
16GHz
16.5GHz
17GHz
-10
-5
0
5
10
15
20
25
30
12
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Ga
in (
d
B
)
Bias Conditions: Vd = 7V, Idq = 1.3A 5%
TGA2502
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 7, 2006
5
Measured Fixtured Data
Bias Conditions: Vd = 7V, Idq = 1.3A 5%
-35
-30
-25
-20
-15
-10
-5
0
8
10
12
14
16
18
20
22
Frequency (GHz)
S
11 (dB)
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
8
10
12
14
16
18
20
22
Frequency (GHz)
S
22 (dB)
TGA2502
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 7, 2006
6
Bias Conditions: Vd = 7V, Idq = 1.3A 5%
30
33
36
39
42
45
48
10
15
20
25
30
35
Fundamental output power per tone (dBm)
TOI (dBm)
13 GHz
13.5 Ghz
14 GHz
14.5 GHz
15 GHz
15.5 GHz
16 GHz
16.5 GHz
17 GHz
Measured Fixtured Data
0
10
20
30
40
50
60
70
10
15
20
25
30
35
Fundamental output power per tone (dBm)
IMD3
(
d
Bc
)
13 GHz
13.5 GHz
14 GHz
14.5 GHz
15 GHz
15.5 GHz
16 GHz
16.5 GHz
17 GHz
TGA2502
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 7, 2006
7
AuSn Vacuum Re-flow
Assembly Note:
Chip & Assembly Diagram
VD
VD
VG
1
PF
PS
1
PF
470
PF
10
PS
RF IN
RF OUT
TGA2502
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 7, 2006
8
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA2502
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 7, 2006
9
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
0
C (30 seconds max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200
0
C.
TGA2502