TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
13 - 17 GHz 2 Watt, 32dB Power Amplifier TGA2503-EPU
Key Features and Performance
33 dBm Midband Pout
32 dB Nominal Gain
10 dB Typical Return Loss
Built-in Directional Power Detector
with Reference
0.5m pHEMT, 3MI Technology
Bias Conditions: 7V, 680mA
Chip dimensions: 2.5 x 1.4 x 0.1 mm
(98 x 55 x 4 mils)
Preliminary Measured Data
Bias Conditions: Vd=7V Id=680mA
Primary Applications
VSAT
Point-to-Point
10
15
20
25
30
35
40
11
12
13
14
15
16
17
18
19
Frequency (GHz)
G
a
in (
d
B)
-25
-20
-15
-10
-5
0
5
Retur
n
Loss (dB)
S21
S11
S22
25
26
27
28
29
30
31
32
33
34
35
11
12
13
14
15
16
17
18
19
Frequency (GHz)
Psat (dBm)
10
15
20
25
30
35
40
45
50
55
60
PAE@Psat (%)
Psat
PAE
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2503-EPU
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
+
Positive Supply Voltage
8 V
2/
V
-
Negative Supply Voltage Range
-5V to 0V
I
+
Positive Supply Current (Quiescent)
TBD
2/
| I
G
|
Gate Supply Current
18 mA
P
IN
Input Continuous Wave Power
21.4 dBm
2/
P
D
Power Dissipation
6.83 W
2/ 3/
T
CH
Operating Channel Temperature
150
0
C
4/ 5/
T
M
Mounting Temperature
(30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power
shall not exceed P
D
.
3/
When operated at this bias condition with a base plate temperature of 70
C, the
median life is reduced from 8.9E+6 to 1E+6.
4/ These ratings apply to each individual FET.
5/
Junction operating temperature will directly affect the device median time to
failure (T
M
). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
TABLE II
DC PROBE TEST
(TA = 25
C, Nominal)
LIMITS
NOTES
SYMBOL
MIN
MAX
UNITS
1/
I
DSS
80
381
mA
1/
G
M
176
424
mS
2/
|V
P
|
0.5
1.5
V
2/
|V
BVGS
|
8
30
V
2/
|V
BVGD
|
13
30
V
1/ Measurements are performed on a 800
mm FET.
2/ V
P
, V
BVGD
, and V
BVGS
are negative.
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2503-EPU
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25
C, Nominal)
(Vd = 7V, Id = 680mA
5%)
LIMITS
SYMBOL
PARAMETER
TEST
CONDITION
MIN
TYP
MAX
UNITS
Gain
Small Signal Gain
F = 13-17
32
dB
IRL
Input Return Loss
F = 13-17
10
dB
ORL
Output Return Loss
F = 13-17
10
dB
PWR
Output Power @
Pin = +5 dBm
F = 13-17
33
dBm
Note: Table III Lists the RF Characteristics of typical devices as determined by
fixtured measurements.
TABLE IV
THERMAL INFORMATION
PARAMETER
TEST CONDITION
T
CH
(
C)
R
qjc
(
C/W)
MTTF
(HRS)
R
qjc
Thermal Resistance
(Channel to Backside)
V
D
= 7V
I
D
= 680mA
P
D
= 4.76W
125.74
11.71
8.9E+6
Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at
70
C baseplate temperature. Worst case condition with no RF applied, 100% of DC
power is dissipated.
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Typical Fixtured Performance
TGA2503-EPU
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
11
12
13
14
15
16
17
18
19
Frequency (GHz)
G
a
in (dB)
-30
-25
-20
-15
-10
-5
0
11
12
13
14
15
16
17
18
19
Frequency (GHz)
S11,S22 (
d
B)
S11
S22
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2503-EPU
Typical Fixtured Performance
30
30.5
31
31.5
32
32.5
33
33.5
34
34.5
35
11
12
13
14
15
16
17
18
19
Frequency (GHz)
Pout (dBm)
Psat
P2dB
10
15
20
25
30
35
40
11
12
13
14
15
16
17
18
19
Frequency (GHz)
PAE (%)
Psat
P2dB
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2503-EPU
Typical Fixtured Performance
17
19
21
23
25
27
29
31
33
35
37
-14 -12 -10
-8
-6
-4
-2
0
2
4
6
8
10
Input power (dBm)
Output Power (dBm)
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
Id (A)
13.5 GHz
14.0 GHz
14.5 GHz
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2503-EPU
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
5
10
15
20
25
30
35
Pout / Tone (dBm)
IMD3 (dBm)
13 GHz
14 GHz
15 GHz
Typical Fixtured Performance
35
36
37
38
39
40
41
42
43
44
45
12
13
14
15
16
17
18
Frequency (GHz)
IP3 (dBm)
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Mechanical Drawing
TGA2503-EPU
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Power Detector
40K
W
40K
W
+5V
Vdet
Vref
50
W
RF out
DUT
5pF
MMIC
External
TGA2503 Power Detector @ 14GHz
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
50
60
sqrt Pout (mW^0.5)
Vref-Vdet (V)
(20 dBm)
(26 dBm)
(29.5 dBm) (32 dBm) (34 dBm)
TGA2503-EPU
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
10
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2503-EPU
Chip Assembly & Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
100pF
Vg
Input TFN
Output TFN
100pF
Vd
Off chip
R=10
W
Off chip
C=0.1
mF
Off chip
R=10
W
Off chip
C=0.1
mF
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
December 17, 2002
11
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA2503-EPU
Assembly Process Notes
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C.
(30 seconds maximum)
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200C.
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