www.docs.chipfind.ru
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005
1
Product Description
The TriQuint TGA2503-SM is a Ku-Band
Packaged Power Amplifier. The
TGA2503-SM operates from 12.5-16 GHz
and is designed using TriQuint's proven
standard 0.5-um power pHEMT production
process.
The TGA2503-SM typically provides
32 dBm of saturated output power with
small signal gain of 32 dB.
The TGA2503-SM is ideally suited for the
VSAT ground terminal market and Point-
to-Point Radio.
Evaluation Boards are available upon
request.
Lead-free and RoHS compliant
Primary Applications
Ku-Band VSAT
Point-to-Point Radio
32 dBm Ku-Band Amplifier
TGA2503-SM
Measured Performance
Bias Conditions: Vd = 6 V, Idq = 600 mA
Key Features
Typical Frequency Range: 12.5 - 16 GHz
32 dBm Nominal Psat
32 dB Nominal Gain
37 dBm Output TOI @ Pin = -20dBm
8 dB Typical Return Loss
Bias Conditions: Vd = 6V, Idq = 600 mA
(Id = 1200mA under RF drive)
Package Dimensions: 4.0 x 4.0 x 0.9 mm
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
20
22
24
26
28
30
32
34
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
S
a
t
ura
t
e
d O
u
t
put
P
o
w
e
r
(
dBm
)
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
32
36
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Gai
n
(d
B
)
-32
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
R
etu
r
n
L
o
ss (d
B
)
Gain
Input
Output
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005
2
TGA2503-SM
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
+
Positive Supply Voltage
8 V
2/
V
-
Negative Supply Voltage Range
-5V to 0V
I
+
Positive Supply Current
1.3 A
2/
| I
G
|
Gate Supply Current
18 mA
P
IN
Input Continuous Wave Power
21 dBm
2/
P
D
Power Dissipation
See note 3
2/ 3/
T
CH
Operating Channel Temperature
150
C
4/ 5/
T
M
Mounting Temperature
(30 Seconds)
260
C
T
STG
Storage Temperature
-65 to 150
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
3/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150
C TBASE
C) / 11.7 (
C/W)
4/
These ratings apply to each individual FET.
5/
Junction operating temperature will directly affect the device median time to failure (T
M
).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005
3
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, Nominal)
Bias Conditions: Vd = 6V, Idq = 600mA
SYMBOL
PARAMETER
TEST CONDITION
NOMINAL *
UNITS
Gain
Small Signal Gain
f = 12.5 16 GHz
32
dB
IRL
Input Return Loss
f = 12.5 16 GHz
10
dB
ORL
Output Return Loss
f = 12.5 16 GHz
8
dB
NF
Noise Figure
f = 12.5 16 GHz
9
dB
Psat
Saturated Output Power
f = 12.5 16 GHz
f = 13.75 14.5 GHz
31
32
dBm
TOI
Third Order Intercept @
Pin = -20dBm
f = 12.5 16 GHz
36
dBm
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITION
T
CH
(
q
C)
R
T
jc
(
q
C/W)
MTTF
(HRS)
R
jc
Thermal Resistance
(Channel to package)
V
D
= 6 V
I
D
= 600 mA
P
Diss
= 3.6 W
127
11.7
7.9 E+6
Note: Backside of package is at 85
C baseplate temperature. Worst case is at
saturated output power when DC power consumption rises to 7.2 W with 1.5 W RF
power delivered to load. Power dissipated is 5.7 W and the temperature rise in the
channel is 67
C. Baseplate temperature must be reduced to 83
C to remain below
the 150
C maximum channel temperature.
TGA2503-SM
* Note:
All measured data is taken using connectorized evaluation boards. The reference
plane is at RF connectors, and hence connector and board loss has not been de-
embedded.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005
4
Measured Performance*
Bias Conditions: Vd = 6 V, Idq =600 mA
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
32
36
11
12
13
14
15
16
17
18
Frequency (GHz)
Ga
in (dB)
-32
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
Re
turn Los
s
(dB)
Gain
Input
Output
6
7
8
9
10
11
12
13
14
12
13
14
15
16
17
18
Frequency (GHz)
Noise Figur
e (dB)
TGA2503-SM
* Note:
All measured data is taken using connectorized evaluation boards. The reference
plane is at RF connectors, and hence connector and board loss has not been de-
embedded.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005
5
0
4
8
12
16
20
24
28
32
36
40
11
12
13
14
15
16
17
18
Frequency (GHz)
Gain (dB)
-40C
25C
70C
-30
-27
-24
-21
-18
-15
-12
-9
-6
-3
0
11
12
13
14
15
16
17
18
Frequency (GHz)
Input R
e
turn Loss (dB
)
-40C
25C
70C
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
11
12
13
14
15
16
17
18
Frequency (GHz)
O
u
tput R
e
turn Loss (dB
)
-40C
25C
70C
Measured Performance
Bias Conditions: Vd = 6 V, Idq =600 mA
TGA2503-SM
* Note:
All measured data is taken using connectorized evaluation boards. The reference
plane is at RF connectors, and hence connector and board loss has not been de-
embedded.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005
6
20
22
24
26
28
30
32
34
12
13
14
15
16
17
18
Frequency (GHz)
Satu
rated
Ou
tp
u
t
Po
wer (d
Bm)
Measured Performance
Bias Conditions: Vd = 6 V, Idq = 600 mA
0
5
10
15
20
25
30
35
-16
-12
-8
-4
0
4
8
12
16
Input Power (dBm)
Pout (dBm) & Gain (dB)
500
600
700
800
900
1000
1100
1200
1300
1400
Drain Current (mA)
@ 14 GHz
Pout
Gain
Id
TGA2503-SM
* Note:
All measured data is taken using connectorized evaluation boards. The reference
plane is at RF connectors, and hence connector and board loss has not been de-
embedded.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005
7
20
22
24
26
28
30
32
34
36
38
12
13
14
15
16
17
18
Frequency (GHz)
Output TOI (dBm) @
Pin/tone= -20dBm
Measured Performance
Bias Conditions: Vd = 6 V, Idq =600 mA
TGA2503-SM
* Note:
All measured data is taken using connectorized evaluation boards. The reference
plane is at RF connectors, and hence connector and board loss has not been de-
embedded.
-60
-54
-48
-42
-36
-30
-24
-18
-12
-6
0
6
12
18
6
8
10
12
14
16
18
20
22
24
26
28
30
Output Power/tone (dBm)
IM3 (dBm
)
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
17 GHz
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005
8
Pin
Description
1, 2, 4, 5, 6, 7, 9, 11, 13, 14,
15, 17, 18, 20, 22, 24
N/C
3
RF Input
8
Vg1
10
Vg2
12
Power Ref
16
RF Output
19
Vd2
21
Vd1
23
Ref
25
Gnd
Bottom View
Top View
Dot indicates Pin 1
Package Pinout Diagram
TGA2503-SM
TGA
2503
Date Code
Lot Code
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005
9
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA2503-SM
[ PP
*URXQG 3DG
3,1 ,'
%RWWRP 9LHZ
7ROHUDQFH
8QLWV PP
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005
10
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
* This layout shows the tuning configuration used to obtain the measured data. The layout
configuration may vary depending on the specific application.
PCB is RO4003 8 mil thickness, 0.5 oz standard copper cladding, with Er = 3.38.
Recommended Board Layout Assembly *
Units: mils
TGA2503-SM
9G 9
S)
S)
9G a9 WR REWDLQ
P$ GUDLQ FXUUHQW
S)
S)
7XQLQJ 6WXE
7X
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005
11
Ordering Information
Part
Package Style
TGA2503-SM
QFN 24L 4x4 Surface Mount
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages.
Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.
TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven
vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed
in the table below.
Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement.
The volume of solder paste depends on PCB and component layout and should be well controlled to
ensure consistent mechanical and electrical performance.
Clean the assembly with alcohol.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Typical Solder Reflow Profiles
Reflow Profile
SnPb
Pb Free
Ramp-up Rate
3
C/sec
3
C/sec
Activation Time and
Temperature
60 120 sec @ 140 160
C
60 180 sec @ 150 200
C
Time above Melting Point
60 150 sec
60 150 sec
Max Peak Temperature
240
C
260
C
Time within 5
C of Peak
Temperature
10 20 sec
10 20 sec
Ramp-down Rate
4 6
C/sec
4 6
C/sec
TGA2503-SM
PDF 
ZIP