TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 28, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
12-18 GHz Ku-Band 2-Stage Driver Amplifier TGA2506-EPU
Key Features
12-18 GHz Bandwidth
17 dB Nominal Gain
> 14 dBm P1dB
Bias: 5,6,7 V, 40 10% mA Self Bias
0.5 um 3MI mmW pHEMT Technology
Chip Dimensions: 1.19 x 0.83 x 0.1 mm
(0.047 x 0.031 x 0.004) in
Primary Applications
Point to Point Radio
Military Ku-Band
Space Ku-Band
VSAT
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 40 mA
ORL
0
2
4
6
8
10
12
14
16
11
12
13
14
15
16
17
18
Frequency (GHz)
P1
d
B
(
d
B
m
)
IRL
Gain
8
10
12
14
16
18
20
8
10
12
14
16
18
20
22
Frequency (GHz)
G
a
in
(
d
B
)
-30
-25
-20
-15
-10
-5
0
Re
tur
n
L
o
s
s
(d
B)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 28, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
V
+
Positive Supply Voltage
8 V
2/
I
+
Positive Supply Current (Quiescent)
57 mA
2/
P
IN
Input Continuous Wave Power
20 dBm
P
D
Power Dissipation
0.45
2/ 3/
T
CH
Operating Channel Temperature
150
0
C
4/ 5/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
When operated at this bias condition with a base plate temperature of 70
0
C, the median life is
reduced to 1E+7 hrs.
4/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
5/
These ratings apply to each individual FET.
TGA2506-EPU
TABLE II
DC PROBE TESTS
(T
A
= 25
C Nominal)
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
VALUE
V
BVGS2
Breakdown Voltage gate-source
-30
-11
V
V
BVGD2
Breakdown Voltage gate-drain
-30
-11
V
V
P2
Pinch-off Voltage
-1.5
-0.3
V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 28, 2004
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Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C, Nominal)
TGA2506-EPU
PARAMETER
TYPICAL
UNITS
Drain Operating
6
V
Quiescent Current
40
10% Self Bias
mA
Small Signal Gain
17
dB
Input Return Loss
15
dB
Output Return Loss
15
dB
Output Power @ 1 dB Compression Gain
14
dBm
Noise Figure (@ Mid-band)
5.5
dB
TABLE IV
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
T
CH
(
O
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal Resistance
(channel to Case)
Vd = 6 V
Id = 40 mA
Pdiss = 0.24 W
99
121
1.4E+8
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
o
C baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 28, 2004
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Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
10
11
12
13
14
15
16
17
18
19
20
11
12
13
14
15
16
17
18
19
Frequency (GHz)
G
a
in
(d
B
)
TGA2506-EPU
Preliminary Measured Data
Bias Conditions: Vd = 5, 6, 7 V, Id = 40 mA
4
6
8
10
12
14
16
18
20
22
24
11
12
13
14
15
16
17
18
19
Frequency (GHz)
G
a
i
n
O
v
e
r
T
e
m
p
er
at
ur
e
(
d
B
)
-
40
0
C
+
70
0
C
Bias Conditions: Vd = 6 V, Id = 40 mA
7V
6V
5V
+
25
0
C
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 28, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA2506-EPU
Preliminary Measured Data
Bias Conditions: Vd =5, 6, 7 V, Id = 40 mA
-40
-35
-30
-25
-20
-15
-10
-5
0
11
12
13
14
15
16
17
18
19
Frequency (GHz)
I
nput
R
e
t
u
r
n
L
o
ss
(
d
B
)
-40
-35
-30
-25
-20
-15
-10
-5
0
11
12
13
14
15
16
17
18
19
Frequency (GHz)
O
u
tp
u
t
R
e
tu
rn
L
o
s
s
(
d
B
)
7V
6V
5V
5V
6V
7V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 28, 2004
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Preliminary Measured Data
Bias Conditions: Vd = 5, 6, 7 V, Id = 40 mA
TGA2506-EPU
10
11
12
13
14
15
16
17
18
19
20
12
13
14
15
16
17
18
Frequency (GHz)
Pout
@
1
d
B
G
a
i
n
Com
p
r
e
s
s
i
on
(
d
B
m
)
-10
-5
0
5
10
15
20
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
-5
-3
-1
1
Pin (dBm)
Po
ut (
d
B
m
)
13
14
15
16
17
18
19
P
o
we
r
Ga
i
n
(
d
B
)
Bias Conditions: Vd = 5, 6, 7 V, Id = 40 mA, Frequency @ 15GHz
7V
6V
5V
5V
6V
7V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 28, 2004
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 40 mA
TGA2506-EPU
0
5
10
15
20
25
30
1
2
3
4
5
6
7
8
9
10
11
12
Output Power per Tone (dBm)
OIP
3
(d
B
m
)
5
10
15
20
25
30
35
40
1
2
3
4
5
6
7
8
9
10
11
12
Output Power per Tone (dBm)
OI
P
3
(
d
B
m
)
Frequency @ 12 GHz
Frequency @ 14 GHz
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 28, 2004
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Preliminary Measured Data
TGA2506-EPU
Bias Conditions: Vd = 6 V, Id = 40 mA
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
12
13
14
15
16
17
Frequency (GHz)
N
o
ise Fig
u
r
e
(d
B)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 28, 2004
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Mechanical Drawing
TGA2506-EPU
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 28, 2004
10
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Chip Assembly Diagram
TGA2506-EPU
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
This configuration is for a self-bias logic pad current search
with connection for bin # 1 . See Table IV for alternate bin
# to get the current typical of 40
10% mA.
TABLE IV
PAD CONNECTIONS
BIN NO.
CONNECTION
1
Pad 4 to Pad 5
2
Pad 4 to Pad 6
3
Pad 4 to Pad 7
4
Pad 4 to Pad 8
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 28, 2004
11
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA2506-EPU
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
C (30 seconds max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200
C.
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