TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 5, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
12-18 GHz Ku-Band 3-Stage Driver Amplifier TGA2507-EPU
Key Features
12-18 GHz Bandwidth
28 dB Nominal Gain
20 dBm P1dB
Bias: 5,6,7 V, 80 10% mA Self Bias
0.5 um 3MI mmW pHEMT Technology
Chip Dimensions: 1.80 x 0.83 x 0.1 mm
(0.071 x 0.031 x 0.004) in
Primary Applications
Point to Point Radio
Military Ku-Band
Ku-Band Space
VSAT
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 80 mA
0
4
8
12
16
20
24
28
32
8
10
12
14
16
18
20
22
Frequency (GHz)
Ga
i
n
(
d
B
)
-40
-35
-30
-25
-20
-15
-10
-5
0
Re
t
u
r
n
L
o
s
s
(
d
B)
Gain
IRL
ORL
16
18
20
22
24
11
12
13
14
15
16
17
18
Frequency (GHz)
P1
d
B
(
d
Bm
)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 5, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
V
+
Positive Supply Voltage
8 V
2/
I
+
Positive Supply Current
114 mA
2/
P
IN
Input Continuous Wave Power
20 dBm
P
D
Power Dissipation
0.91 W
2/ 3/
T
CH
Operating Channel Temperature
150
0
C
4/ 5/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device
2/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
3/
When operated at this power dissipation with a base plate temperature of 70
C, the median
life is 1.8 E+6 hrs.
4/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
5/
These ratings apply to each individual FET.
TGA2507-EPU
TABLE II
DC PROBE TESTS
(T
A
= 25
C Nominal)
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
VALUE
V
BVGS3
Breakdown Voltage gate-source
-30
-11
V
V
BVGD3
Breakdown Voltage gate-drain
-30
-11
V
V
P2
Pinch-off Voltage
-1.5
-0.3
V
V
P3
Pinch-off Voltage
-1.5
-0.3
V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 5, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C, Nominal)
TGA2507-EPU
PARAMETER
TYPICAL
UNITS
Drain Operating
6
V
Quiescent Current
80
10% Self Bias
mA
Small Signal Gain
28
dB
Input Return Loss
15
dB
Output Return Loss
20
dB
Output Power @ 1 dB Compression Gain
20
dBm
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
o
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal
Resistance
(channel to backside of
carrier)
Vd = 6 V
Id = 80 mA
Pdiss = 0.48 W
108
80
5.2 E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
o
C baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 5, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA2507-EPU
Preliminary Measured Data
Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA
Bias Conditions: Vd = 6 V, Id = 80 mA
18
20
22
24
26
28
30
32
11
12
13
14
15
16
17
18
19
Frequency (GHz)
Ga
i
n
(
d
B)
18
20
22
24
26
28
30
32
34
36
11
12
13
14
15
16
17
18
19
Frequency (GHz)
G
a
i
n
O
v
e
r
T
e
m
p
er
at
ur
e
(
d
B
)
5V
6V
7V
+20
0
C
+10
0
C
0
0
C
-20
0
C
-40
0
C
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 5, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA2507-EPU
Preliminary Measured Data
Bias Conditions: Vd =5, 6, 7 V, Id = 80 mA
6V
5V
7V
-40
-35
-30
-25
-20
-15
-10
-5
0
11
12
13
14
15
16
17
18
19
Frequency (GHz)
I
nput
R
e
t
u
r
n
Loss
(
d
B
)
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
11
12
13
14
15
16
17
18
19
Frequency (GHz)
O
u
t
put
R
e
t
u
r
n
Los
s (
d
B
)
6V
7V
5V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 5, 2004
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Preliminary Measured Data
Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA
TGA2507-EPU
Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA, Frequency @ 15GHz
15
16
17
18
19
20
21
22
23
24
11
12
13
14
15
16
17
18
Frequency (GHz)
P
o
u
t
@
1
d
B
G
a
i
n
C
o
m
p
r
essi
o
n
(
d
B
m
)
0
2
4
6
8
10
12
14
16
18
20
22
24
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
-5
-3
-1
1
Pin (dBm)
Pout
(
d
B
m
)
18
19
20
21
22
23
24
25
26
27
28
29
30
P
o
we
r
Ga
in
(
d
B)
7V
6V
5V
7V
6V
5V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 5, 2004
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Preliminary Measured Data
Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA
TGA2507-EPU
20
22
24
26
28
30
32
34
12
13
14
15
16
17
18
Frequency (GHz)
OIP
3
(
d
Bm
)
5V
6V
7V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 5, 2004
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Mechanical Drawing
TGA2507-EPU
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 5, 2004
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Chip Assembly Diagram
TGA2507-EPU
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
This configuration is for a self-bias logic pad current search with connections for bin
#1. See Table IV for alternate bin # to get the current of typical 80
10% mA.
TABLE V
PAD CONNECTIONS
BIN No.
DC BIAS LADDER 1
DC BIAS LADDER 2
1
Pad 6 to Pad 7
Pad 11 to Pad 12
2
Pad 6 to Pad 8
Pad 11 to Pad 13
3
Pad 6 to Pad 9
Pad 11 to Pad 14
4
Pad 6 to Pad 10
Pad 11 to Pad 15
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
December 5, 2004
10
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA2507-EPU
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200 C.
PDF 
ZIP