TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 8, 2002
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
12-19 GHz VSAT Amplifier TGA2508-EPU
Key Features
0.50 um pHEMT Technology
30 dB Nominal Gain
30 dBm P1dB @ 15 GHz
Bias Conditions: 7 V, 433 mA
Chip Dimensions: 2.1 x 1.1 x 0.1 mm
Primary Applications
VSAT Ground Terminals
Point to Point Radio
Military Ku Band
Preliminary Measured Data
Bias Conditions: Vd = 7 V, Id = 433 mA
)UHTXHQF\ *+]
*D
L
Q
G
%
25
26
27
28
29
30
31
32
12
13
14
15
16
17
18
19
Frequency (GHz)
P
o
u
t
@
1
d
B
&
2d
B
co
m
p
r
essi
o
n
(
d
B
m
)
P2dB
P1dB
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 8, 2002
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE I
MAXIMUM RATINGS 5/
SYMBOL
PARAMETER
VALUE
NOTES
V
+
Positive Supply Voltage
8 V
4/
V
-
Negative Supply Voltage Range
-2 to 0 V
I
+
Positive Supply Current (Quiescent)
591 mA
4/
| I
G
|
Gate Supply Current
16 mA
P
IN
Input Continuous Wave Power
17 dBm
P
D
Power Dissipation
6.75 W
3/ 4/
T
CH
Operating Channel Temperature
150
0
C
1/ 2/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings apply to each individual FET.
2/
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
3/
When operated at this bias condition with a base plate temperature of 70
0
C, the median life is
reduced from 6.4E+7 to 1E+6 hrs.
4/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
5/
These ratings represent the maximum operable values for this device.
TGA2508-EPU
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 8, 2002
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA2508-EPU
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
o
C 5
o
C)
PARAMETER
TYPICAL
UNITS
Drain Operating
7
V
Quiescent Current
433
mA
Small Signal Gain
30
dB
Input Return Loss (Linear Small Signal)
17
dB
Output Return Loss (Linear Small Signal
7
dB
Output Power @ 1 dB Compression Gain @ 15GHz
30
dBm
TABLE III
THERMAL INFORMATION*
PARAMETER
TEST CONDITIONS
T
CH
(
O
C)
R
JC
(
C/W)
T
M
(HRS)
R
JC
Thermal Resistance
(channel to backside of
carrier)
Vd = 7 V
I
D
= 433 mA
Pdiss = 3.031 W
105.92
11.85
6.4E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier
at 70
C baseplate temperature. Worst case condition with no RF applied, 100% of DC
power is dissipated.
* This information is a result of a thermal model.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 8, 2002
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA2508-EPU
Preliminary Measured Data
Bias Conditions: Vd = 7 V, Id = 433 mA
10
12
14
16
18
20
22
24
26
28
30
32
34
36
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
Ga
i
n
(
d
B)
10
12
14
16
18
20
22
24
26
28
30
32
34
36
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
G
a
in
(
d
B
)
-
40
0
C
+
25
0
C
+
70
0
C
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 8, 2002
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA2508-EPU
Preliminary Measured Data
Bias Conditions: Vd = 7 V, Id = 433 mA
-30
-25
-20
-15
-10
-5
0
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
I
nput
Ret
u
r
n
Los
s (
d
B
)
-30
-25
-20
-15
-10
-5
0
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
O
u
t
put
R
e
t
u
r
n
Loss (
d
B
)
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