TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Ku Band, 2 Watt Power Amplifier
TGA2510-EPU
Key Features and Performance
�
34 dBm Midband Psat
�
26 dB Nominal Gain
�
7 dB Typical Input Return Loss
�
12 dB Typical Output Return Loss
�
12.5 - 17 GHz Frequency Range
�
Directional Power Detector with
Reference
�
0.25�m pHEMT 3MI Technology
�
Bias Conditions: 7.5V, 650mA
�
Chip Dimensions:
2.02 x 1.38 x 0.10 mm
(0.080 x 0.054 x 0.004 inches)
Preliminary Measured Performance
Bias Conditions: Vd=7.5V Id=650mA
Primary Applications
�
VSAT
�
Point to Point
0
5
10
15
20
25
30
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
S
21 (
d
B)
-20
-15
-10
-5
0
5
10
S
11,S
22 (
d
B)
S21
S11
S22
26
27
28
29
30
31
32
33
34
35
36
10
11
12
13
14
15
16
17
18
19
Frequency (GHz)
P2d
B
, Psat
(
d
Bm)
10
15
20
25
30
35
40
45
50
55
60
PAE @
P2d
B
(
%
)
Psat
P2dB
PAE
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2510-EPU
TABLE I
MAXIMUM RATINGS
Symbol
Parameter
Value
Notes
V
D
Drain Voltage
8 V
1/ 2/
V
G
Gate Voltage Range
-5V to 0V
1/
I
D
Drain Supply Current (Quiescent)
1300 mA
1/ 2/
| I
G
|
Gate Supply Current
18 mA
1/
P
IN
Input Continuous Wave Power
24 dBm
1/ 2/
P
D
Power Dissipation
6.43 W
1/ 2/ 3/
T
CH
Operating Channel Temperature
150
0
C
4/
T
M
Mounting Temperature
(30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/ These ratings represent the maximum operable values for this device
2/
Combinations of supply voltage, supply current, input power, and output power
shall not exceed P
D
at a package base temperature of 70
�C
3/ When operated at this bias condition with a baseplate temperature of 70
�C, the
MTTF is reduced to 1.0E+6 hours
4/ Junction operating temperature will directly affect the device median time to
failure (MTTF). For maximum life, it is recommended that junction temperatures
be maintained at the lowest possible levels.
TABLE II
DC PROBE TEST
(TA = 25
�C, Nominal)
LIMITS
NOTES
SYMBOL
MIN
MAX
UNITS
1/
I
DSS
80
381
mA
1/
G
M
175
425
mS
2/
|V
P
|
0.5
1.5
V
2/
|V
BVGS
|
8
30
V
2/
|V
BVGD
|
14
30
V
1/ Measurements are performed on a 800
mm FET.
2/ V
P
, V
BVGD
, and V
BVGS
are negative.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25
�C, Nominal)
(Vd = 7.5V, Id = 650mA
�5%)
Symbol
Parameter
Test Conditions
Typ
Units Notes
Gain
Small Signal Gain
F = 12.5 � 17 GHz
26
dB
IRL
Input Return Loss
F = 12.5 � 17 GHz
7
dB
ORL
Output Return Loss
F = 12.5 � 17 GHz
12
dB
PWR
Output Power @
Pin = +15dBm
F = 12.5 � 17 GHz
34.0
dBm
PAE
Power Added
Efficiency @
Pin=+15dBm
F = 12.5 � 17 GHz
31
%
Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
TGA2510-EPU
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
�C)
R
QJC
(
�C/W)
MTTF
(hrs)
R
QJC
Thermal Resistance
(Channel to Backside of
Carrier)
V
D
= 7.5V
I
D
= 650mA
P
DISS
= 4.88W
T
BASE
= 70
�C
130.7
12.44
5.5E+6
Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil
CuMo carrier at 70
�C baseplate temperature. Worst case conditions with no RF
applied, 100% of DC power is dissipated.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Typical Fixtured Performance
Id=650mA
TGA2510-EPU
0
5
10
15
20
25
30
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
S21 (dB)
Vd=7.5V
Vd=5V
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
S11 (dB)
Vd=7.5V
Vd=5V
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Typical Fixtured Performance
Id=650mA
TGA2510-EPU
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
S22 (dB)
Vd=7.5V
Vd=5V
26
27
28
29
30
31
32
33
34
35
36
10
11
12
13
14
15
16
17
18
19
Frequency (GHz)
P2dB (dBm)
Vd=5V
Vd=7.5V
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2510-EPU
0
5
10
15
20
25
30
35
40
45
50
55
60
10
11
12
13
14
15
16
17
18
19
Frequency (GHz)
PAE @ P2dB (%)
Vd=5V
Vd=7.5V
Typical Fixtured Performance
Id=650mA
26
27
28
29
30
31
32
33
34
35
36
10
11
12
13
14
15
16
17
18
19
Frequency (GHz)
Psat (dBm)
Vd=5V
Vd=7.5V
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2510-EPU
Typical Fixtured Performance
Id=650mA
15.0
17.5
20.0
22.5
25.0
27.5
30.0
32.5
35.0
37.5
40.0
0
2
4
6
8
10
12
14
16
18
20
Pin (dBm)
Pout (dBm)
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
Id (mA)
12.5 GHz
13 GHz
14 GHz
16 GHz
Vd=7.5V
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
32.5
35.0
0
2
4
6
8
10
12
14
16
18
20
Pin (dBm)
Pout (dBm)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
Id (mA)
12.5 GHz
13 GHz
14 GHz
16 GHz
Vd=5V
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2510-EPU
Mechanical Drawing
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
40K
W
40K
W
+5V
Vdet
Vref
50
W
RF out
DUT
5pF
Chip
External
Power Detector
TGA2510-EPU
TGA2510 Power Detector @ 14GHz
0
0.1
0.2
0.3
0.4
0.5
0.6
14 16 18 20 22 24 26 28 30 32 34 36 38 40
Pout (dBm)
Vref-Vdet (V)
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
10
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Chip Assembly & Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
100pF
Vg
Input TFN
Output TFN
100pF
Vd
Off chip
R=10
W
Off chip
C=0.1
mF
Off chip
R=10
W
Off chip
C=0.1
mF
TGA2510-EPU
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
11
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
� Use AuSn (80/20) solder with limited exposure to temperatures at or above 300�C.
(30 seconds maximum)
� An alloy station or conveyor furnace with reducing atmosphere should be used.
� No fluxes should be utilized.
� Coefficient of thermal expansion matching is critical for long-term reliability.
� Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
� Vacuum pencils and/or vacuum collets are the preferred method of pick up.
� Air bridges must be avoided during placement.
� The force impact is critical during auto placement.
� Organic attachment can be used in low-power applications.
� Curing should be done in a convection oven; proper exhaust is a safety concern.
� Microwave or radiant curing should not be used because of differential heating.
� Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
� Thermosonic ball bonding is the preferred interconnect technique.
� Force, time, and ultrasonics are critical parameters.
� Aluminum wire should not be used.
� Maximum stage temperature is 200�C.
Assembly Process Notes
TGA2510-EPU