Advance Product Information
September 2, 2005
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Wideband LNA with AGC
TGA2513-EPU
Key Features
Frequency Range: 2-23 GHz
17 dB Nominal Gain
> 30 dB Adjustable Gain with Vg2
16 dBm Nominal P1dB
< 2 dB Midband Noise Figure
0.15 um 3MI pHEMT Technology
Nominal Bias: Vd = 5V, Id = 75 mA
Chip Dimensions: 2.09 x 1.35 x 0.10 mm
(0.082 x 0.053 x 0.004 in)
Primary Applications
Wideband Gain Block / LNA
X-Ku Point to Point Radio
IF & LO Buffer Applications
Product Description
The TriQuint TGA2513-EPU is a compact
LNA/Gain Block MMIC with AGC via the
control gate. The LNA operates from
2-23 GHz and is designed using
TriQuint's proven standard 0.15 um gate
pHEMT production process.
The TGA2513-EPU provides a nominal
16 dBm of output power at 1 dB gain
compression with a small signal gain of
17 dB. Typical noise figure is < 3 dB from
2-18 GHz.
The TGA2513-EPU is suitable for a
variety of wideband electronic warfare
systems such as radar warning receivers,
electronic counter measures,
decoys, jammers and phased array
systems.
The TGA2513-EPU is 100% DC and RF
tested on-wafer to ensure performance
compliance.
Measured Fixtured Data
Vd = 5V, Id= 75mA, Vg2 = 2V, Typical Vg1 = -60mV
-16
-12
-8
-4
0
4
8
12
16
20
0
3
6
9
12
15
18
21
24
27
30
Frequency (GHz)
Gain (dB)
-24
-18
-12
-6
0
6
12
18
24
30
Return Loss (dB)
Gain
Input
Output
0
1
2
3
4
5
6
7
8
9
2
4
6
8
10
12
14
16
18
20
22
24
Frequency (GHz)
NF (dB)
Advance Product Information
September 2, 2005
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
V
+
Positive Supply Voltage
7 V
2/
V
g1
Gate 1 Supply Voltage Range
-2V TO 0 V
V
g2
Gate 2 Supply Voltage Range
-0.5 V TO +3.5 V
I
+
Positive Supply Current
151 mA
2/
| I
G
|
Gate Supply Current
10 mA
P
IN
Input Continuous Wave Power
21 dBm
2/
P
D
Power Dissipation
1.5 W
2/, 3/
T
CH
Operating Channel Temperature
117
C
4/, 5/
T
M
Mounting Temperature (30 Seconds)
320
C
T
STG
Storage Temperature
-65 to 117
C
1/
These ratings represent the maximum operable values for this device.
2/
Current is defined under no RF drive conditions. Combinations of supply voltage, supply
current, input power, and output power shall not exceed P
D
.
3/
When operated at this power dissipation with a base plate temperature of 70
C, the median
life is 1 E+6 hours.
4/
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
5/
These ratings apply to each individual FET.
TGA2513-EPU
TABLE II
DC PROBE TEST
(T
A
= 25
C, Nominal)
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
I
dss, Q1- Q10
Saturated Drain Current
--
216
mA
V
p, Q1-Q10
Pinch-off Voltage
-1
0
V
V
BVGD, Q1-Q10
Breakdown Voltage Gate-
Drain
-30
-5
V
V
BVGS, Q1-Q10
Breakdown Voltage Gate-
Source
-30
-5
V
Note: Q1-Q10 is a 720um size FET.
Advance Product Information
September 2, 2005
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE IV
THERMAL INFORMATION*
Parameter
Test Conditions
T
CH
(
o
C)
R
JC
(
C/W)
T
M
(HRS)
R
JC
Thermal
Resistance
(channel to backside of
carrier)
Vd = 5 V
I
D
= 75 mA
Pdiss = 0.375 W
82
32
4.5 E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
CuMo Carrier at 70
C baseplate temperature. Worst case condition with no RF
applied, 100% of DC power is dissipated.
TGA2513-EPU
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25
C, Nominal)
Vd = 5V, Id = 75 mA Vg2 = 2V
SYMBOL
PARAMETER
TEST
CONDITION
NOMINAL
UNITS
Gain
Small Signal Gain
f = 2-23 GHz
17
dB
IRL
Input Return Loss
f = 2-23 GHz
14
dB
ORL
Output Return Loss
f = 2-23 GHz
14
dB
NF
Noise Figure
f = 3-13 GHz
f = 2-18 GHz
2
< 3
dB
P
1dB
Output Power @
1dB Gain
Compression
f = 2-23 GHz
16
dBm
Advance Product Information
September 2, 2005
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA2513-EPU
Measured Fixtured Data
Vd = 5V, Id= 75mA, Typical Vg1 = -60mV, Vg2 = 2V
-16
-12
-8
-4
0
4
8
12
16
20
0
3
6
9
12
15
18
21
24
27
30
Frequency (GHz)
Gain (dB)
-24
-18
-12
-6
0
6
12
18
24
30
Return Loss (dB)
Gain
Input
Output
0
1
2
3
4
5
6
7
8
9
2
4
6
8
10
12
14
16
18
20
22
24
Frequency (GHz)
NF (dB)
Advance Product Information
September 2, 2005
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA2513-EPU
Measured Fixtured Data
Vd = 5V, Typical Vg1 = -60 mV
Vd = 5V, Id= 75mA, Typical Vg1 = -60mV,Vg2 = 2V
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
22
24
Frequency (GHz)
Output Power (dBm)
P2dB
P1dB
-20
-15
-10
-5
0
5
10
15
20
0
2
4
6
8
10 12 14 16 18 20 22 24
Frequency (GHz)
Gain (dB)
Id=73mA
Vg2= 2.0V
Id=42mA
Vg2=0.16V
Id=21mA
Vg2=-0.05V
Id=15mA
Vg2=-0.25V
Id=11mA
Vg2=-0.33V
Id=9mA
Vg2=-0.37V
Id=5mA
Vg2=-0.43V
Id=3mA
Vg2=-0.47V
Advance Product Information
September 2, 2005
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA2513-EPU
RC 31_29
5
10
15
20
25
30
35
0
3
6
9
12
15
18
21
24
27
30
Frequency (GHz)
TOI (dBm)
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
Fundamental output power per tone (dBm)
IMD3 (dBc)
2 GHz
10 GHz
14 GHz
18 GHz
20 GHz
22 GHz
24 GHz
Measured Fixtured Data
Vd = 5V, Id= 75mA, Typical Vg1 = -60mV, Vg2 = 2V
Advance Product Information
September 2, 2005
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
0
5
10
15
20
25
30
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Output TOI (dBm)
Vg2=2.00V
Vg2=1.75V
Vg2=1.50V
Vg2=1.25V
Vg2=1.00V
Vg2=0.75V
Vg2=0.50V
Vg2=0.25V
Vg2=0.0V
Vg2=-0.25V
TGA2513-EPU
Measured Fixtured Data
Vd = 5V, Id= 75mA, Pin = -10 dBm
Advance Product Information
September 2, 2005
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA2513-EPU
Mechanical Characteristics
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
0.000 (0.000)
0.235 (0.009)
1.242 (0.049)
1.351 (0.053)
0.973 (0.038)
1.210 (0.048)
0.099 (0.004)
0.000 (0.000)
0.095 (0.004)
1.971 (0.078)
2.091 (0.082)
0.103 (0.004)
1.208 (0.048)
1.980 (0.078)
1
2
3
4
5
Units: millimeters (inches)
Thickness: 0.100 (0.004) (reference only)
Chip edge to bond pad dimensions are shown to center of pad
Chip size tolerance: +/- 0.051 (0.002)
GND IS BACKSIDE OF MMIC
Bond Pad #1: RF IN 0.100 x 0.125 (0.004 x 0.005)
Bond Pad #2: VG2 0.100 x 0.100 (0.004 x 0.004)
Bond Pad #3: VD 0.100 x 0.125 (0.004 x 0.005)
Bond Pad #4: RF OUT 0.100 x 0.125 (0.004 x 0.005)
Bond Pad #5: VG1 0.100 x 0.100 (0.004 x 0.004)
Advance Product Information
September 2, 2005
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA2513-EPU
Recommended Assembly Diagram
100 pF
100 pF
Vg2
Vd
Vg1
RF IN
RF OUT
Advance Product Information
September 2, 2005
10
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
C for 30 sec.
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200
C.
TGA2513-EPU
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