Advance Product Information
July 20, 2005
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
X-band Ultra Low Noise Amplifier TGA2600
Key Features
Frequency Range: 6-12 GHz
0.7 dB Noise Figure
30 dB Nominal Gain
2 dBm Nominal P1dB
> 12 dB Return Loss
Nominal Bias 2.5V @ 17 mA
0.15-um 3MI mHEMT Technology
Chip Dimensions: 2.20 x 0.99 x 0.10 mm
(0.087 x 0.039 x 0.004 in)
Primary Applications
Radar
X band LNA, ECM
Product Description
The TriQuint TGA2600-EPU is an
Ultra Low-Noise Amplifier. This LNA
operates from 7-11 GHz with a typical
mid-band noise figure of 0.7 dB.
The device features 30dB of gain
across the band, while providing a
nominal output power at P1dB gain
compression of 2 dBm. Typical input
and output return loss is 12 dB.
Ground is provided to the circuitry
through vias to the
backside metallization.
The TGA2600-EPU LNA is suitable for
a variety of C and X band applications
such as radar receivers, electronic
counter measures,decoys, jammers,
and phased array systems.
The TGA2600-EPU is 100% DC and
RF tested on-wafer to ensure
performance compliance.
Lead-free and RoHS compliant.
Measured Fixtured Data
Bias Conditions: Vd = 2.5V, Id= 17mA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
6
7
8
9
10
11
12
13
14
15
16
Frequency (GHz)
N
o
i
se Fi
gure (
d
B
)
-30
-24
-18
-12
-6
0
6
12
18
24
30
36
42
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Gain (dB
)
-30
-24
-18
-12
-6
0
6
12
18
24
30
36
42
R
e
turn Loss (dB
)
Input
Output
Gain
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
Advance Product Information
July 20, 2005
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
V
+
Positive Supply Voltage
4.5 V
2/
V
g
Gate Supply Voltage Range
-2V to +1 V
I
+
Positive Supply Current
50 mA
2/
| I
G
|
Gate Supply Current
2 mA
P
IN
Input Continuous Wave Power
TBD
2/
P
D
Power Dissipation
0.23 W
2/, 3/
T
CH
Operating Channel Temperature
110
C
4/, 5/
T
M
Mounting Temperature
175
C
T
STG
Storage Temperature
-65 to 110
C
1/
These ratings represent the maximum operable values for this device.
2/
Current is defined under no RF drive conditions. Combinations of supply voltage, supply
current, input power, and output power shall not exceed P
D
.
3/
When operated at this power dissipation with a base plate temperature of 70
C, the median
life is greater than 1 E+6 hours.
4/
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
5/
These ratings apply to each individual FET.
TGA2600-EPU
Advance Product Information
July 20, 2005
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE III
THERMAL INFORMATION*
Parameter
Test Conditions
T
CH
(
o
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal
Resistance
(channel to backside of
carrier)
Vd = 2.5 V
I
D
= 16 mA
Pdiss = 0.04 W
73
75
> 1 E+6
Note: Assumes epoxy mounted at 70
C baseplate temperature. Worst case
condition with no RF applied, 100% of DC power is dissipated.
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
C, Nominal)
Vd = 2.5V, Id = 17 mA
SYMBOL
PARAMETER
TEST
CONDITION
NOMINAL
UNITS
Gain
Small Signal Gain
f = 7-11 GHz
30
dB
IRL
Input Return Loss
f = 7-11 GHz
12
dB
ORL
Output Return Loss
f = 7-11 GHz
12
dB
NF
Noise Figure
f = 7-11 GHz
0.7
dB
P
1dB
Output Power @
1dB Gain
Compression
f = 7-11 GHz
2
dBm
TOI
Output Third Order
Intercept
f = 7-11 GHz
14
dBm
TGA2600-EPU
Advance Product Information
July 20, 2005
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Measured Fixtured Data
Bias Conditions: Vd = 2.5V, Id= 17mA
TGA2600-EPU
0
0.2
0.4
0.6
0.8
1
1.2
1.4
6
7
8
9
10
11
12
13
14
15
16
Frequency (GHz)
Noise Figure (dB)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
5
6
7
8
9
10
11
12
13
Frequency (GHz)
Nois
e
Figure
(dB)
Id = 17mA
Id = 10mA
Id = 8mA
Id = 5mA
Advance Product Information
July 20, 2005
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Measured Fixtured Data
Bias Conditions: Vd = 2.5V, Id= 17mA
25
26
27
28
29
30
31
32
33
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
Pout (dBm)
Gain (dB)
7 GHz
9 GHz
11 GHz
TGA2600-EPU
-30
-24
-18
-12
-6
0
6
12
18
24
30
36
42
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Ga
in
(
d
B)
-30
-24
-18
-12
-6
0
6
12
18
24
30
36
42
R
e
turn Loss (dB
)
Input
Output
Gain
0
0.5
1
1.5
2
2.5
3
3.5
6
7
8
9
10
11
12
Frequency (GHz)
Output P
1
dB (dBm)
Advance Product Information
July 20, 2005
6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
10
11
12
13
14
15
16
17
18
6
7
8
9
10
11
12
Frequency (GHz)
Output TOI (dBm)
TGA2600-EPU
40
42
44
46
48
50
52
54
56
58
60
-19
-17
-15
-13
-11
-9
-7
Output Power Per Tone (dBm)
IMD3 (dBc)
7 GHz
9 GHz
11 GHz
Measured Fixtured Data
Bias Conditions: Vd = 2.5V, Id= 17mA
Advance Product Information
July 20, 2005
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Mechanical Characteristics
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
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Advance Product Information
July 20, 2005
8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommended Assembly Diagram
TGA2600-EPU
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
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Advance Product Information
July 20, 2005
9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Assembly notes:
Use conductive epoxy with limited exposure to temperatures at or above 175
C.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 150
C.
TGA2600-EPU
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