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Электронный компонент: TGA2700

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Advance Product Information
November 12, 2004
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
X-Band Driver Amplifier
TGA2700
Key Features
Frequency Range: 7-13 GHz
25 dB Nominal Gain
30dBm Output Power @ Pin=10dBm, Midband
12 dB Input Return Loss
10 dB Output Return Loss
0.25 um 3MI pHEMT Technology
Nominal Bias 9V @ 300 mA/225 mA
Chip Dimensions: 1.57 x 1.33 x 0.10 mm
(0.062 x 0.052 x 0.004 in)
Product Description
The TriQuint TGA2700-EPU is an X-band Driver
Amplifier that operates between 7-13 GHz, The
Driver Amplifer is designed using TriQuint's
proven standard 0.25 um gate pHEMT production
process.
The TGA2700-EPU provides typical 30dBm
output power at +10 dBm input power @ 300mA
and has a small signal gain of 25 dB.
The TGA2700-EPU is 100% DC and RF tested
on-wafer to ensure performance compliance.
Measured Fixtured Data
Bias Conditions: Vd = 9V, Idq= 300mA
Primary Applications
X-band Driver
Point-to-Point Radio
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
7
8
9
10
11
12
13
Frequency (GHz)
G
a
in (dB)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
Re
turn Los
s
(dB)
Input
Output
Gain
Note: This Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
20
22
24
26
28
30
32
34
7
8
9
10
11
12
13
Frequency (GHz)
Ou
t
p
u
t
Po
we
r
a
t
Pin
= 1
0
d
Bm (
d
Bm)
Advance Product Information
November 12, 2004
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
+
Positive Supply Voltage
10 V
2/
V
-
Negative Supply Voltage Range
-5V TO 0V
I
+
Positive Supply Current
536 mA
2/
| I
G
|
Gate Supply Current
14 mA
P
IN
Input Continuous Wave Power
20 dBm
2/
P
D
Power Dissipation
2.7 W
2/, 3/
T
CH
Operating Channel Temperature
150
0
C
4/, 5/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
3/
When operated at this bias condition with a base plate temperature of 55
0
C,
the median life is 1E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (T
M
).
For maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
5/
These ratings apply to each individual FET.
TGA2700-EPU
TABLE II
DC PRO BE TESTS
(T
A
= 25
C, Nominal)
Symbol
Param eter
Minim um
M aximum
Value
Idss
Saturated Drain Current
75
353
mA
Gm
Transconductance
165
398
mS
V
P
Pinch-off Voltage
-1.5
-0.5
V
B
VGS
Breakdown Voltage gate-source
-30
-8
V
B
VGD
Breakdown Voltage gate-drain
-30
-12
V
Advance Product Information
November 12, 2004
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25
C, Nominal)
Vd = 9 V, Id = 300 mA
SYMBOL
PARAMETER
TEST
CONDITION
NOMINAL
UNITS
Gain
Small Signal Gain
f = 7-13 GHz
25
dB
IRL
Input Return Loss
f = 7-13 GHz
12
dB
ORL
Output Return Loss
f = 7-13 GHz
10
dB
P
sat
Saturated Output Power
f = 8-13 GHz
30
dBm
TOI
Output TOI @ Pin = -5dBm
f = 8-12 GHz
> 36
dBm
PAE
Power Added Efficiency
f = 12 GHz
27
%
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
T
baseplate
(
o
C)
T
CH
(
o
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
Vd = 9 V
I
D
= 225 mA
Pdiss = 2.0 W
70
140
2.4 E+6
R
JC
Thermal
Resistance
(channel to backside
of package)
Vd = 9 V
I
D
= 300 mA
Pdiss = 2.7 W
55
150
34.7
1 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
CuMo Carrier. Worst case condition with no RF applied, 100% of DC power is dissipated.
TGA2700-EPU
Advance Product Information
November 12, 2004
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA2700-EPU
Typical Fixtured Performance
Bias Conditions: Vd = 9V, Idq = 300mA
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
6
7
8
9
10
11
12
13
14
Frequency (GHz)
Gain (dB)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
Return Loss (dB)
Input
Output
Gain
0
5
10
15
20
25
30
35
6
7
8
9
10
11
12
13
Frequency (GHz)
Pout (dB
m
)
Pin = -2 dBm
Pin = 0 dBm
Pin = 2 dBm
Pin = 4 dBm
Pin = 6 dBm
Pin = 8 dBm
Pin = 10 dBm
Advance Product Information
November 12, 2004
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Typical Fixtured Performance
Bias Conditions: Vd = 9V, Idq = 300mA
10
13
16
19
22
25
28
31
34
6
7
8
9
10
11
12
13
Frequency (GHz)
Pout @ Pin = +10dBm (dBm)
0
5
10
15
20
25
30
35
40
PAE (
%
)
Output Power
PAE
TGA2700-EPU
0
5
10
15
20
25
30
35
-2
-1
0
1
2
3
4
5
6
7
8
9
10
Input Power (dBm)
Pout (dBm) & Gai
n
(dB)
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
Id (
A
)
Output Power
Id
Gain
@ 10 GHz
Advance Product Information
November 12, 2004
6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Typical Fixtured Performance
Bias Conditions: Vd = 9V, Idq = 300mA
TGA2700-EPU
-80
-70
-60
-50
-40
-30
-20
-10
0
6
7
8
9
10
11
12
13
14
Frequency (GHz)
Input Return Loss (dB)
-40
-30
-20
-10
0
10
20
30
40
Output Return Loss (dB)
-40 Deg C - S11
Room Temp. - S11
+75 deg. C - S11
-40 Deg C - S22
Room Temp. - S22
+75 deg. C - S22
10
12
14
16
18
20
22
24
26
28
30
6
7
8
9
10
11
12
13
14
Frequency (GHz)
Gain (
d
B)
-40 deg C
Room
Temp.
+75 deg C
Advance Product Information
November 12, 2004
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA2700-EPU
Typical Fixtured Performance
Bias Conditions: Vd = 9V, Idq = 300mA
0
5
10
15
20
25
30
35
40
45
50
9
11
13
15
17
19
21
23
25
Output Power/Tone (dBm)
IMD
3 (dB
c
)
8 GHz
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
30
31
32
33
34
35
36
37
38
39
40
8
8.5
9
9.5
10
10.5
11
11.5
12
12.5
13
Frequency (GHz)
Output TOI @ Pin =-5 dBm
Advance Product Information
November 12, 2004
8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA2700-EPU
Typical Fixtured Performance
Bias Conditions: Vd = 9V, Idq = 300mA
28
29
30
31
32
33
34
35
36
37
38
39
40
12
14
16
18
20
22
24
26
Output Power/tone (dBm)
Output TOI (dBm)
8 GHz
9 GHz
10 GHz
11 GHz
12 GHz
Advance Product Information
November 12, 2004
9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
0
5
10
15
20
25
30
35
6
7
8
9
10
11
12
13
Frequency (GHz)
Pout (dB
m
)
Pin = -2 dBm
Pin = 0 dBm
Pin = 2 dBm
Pin = 4 dBm
Pin = 6 dBm
Pin = 8 dBm
Pin = 10 dBm
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
6
7
8
9
10
11
12
13
14
Frequency (GHz)
Gain (dB)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
Re
turn Los
s
(dB)
Input
Output
Gain
TGA2700-EPU
Typical Fixtured Performance
Bias Conditions: Vd = 9V, Idq = 225mA
Advance Product Information
November 12, 2004
10
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA2700-EPU
0
5
10
15
20
25
30
35
-2
-1
0
1
2
3
4
5
6
7
8
9
10
Input Power (dBm)
Pout (dBm) & Gain (dB)
0.2
0.22
0.24
0.26
0.28
0.3
0.32
0.34
0.36
0.38
0.4
Id (A)
Id
@ 10 GHz
Output Power
Gain
@ 10 GHz
10
13
16
19
22
25
28
31
34
6
7
8
9
10
11
12
13
Frequency (GHz)
Pout @
Pin = +10dBm (dBm)
0
5
10
15
20
25
30
35
40
PAE (
%
)
Output Power
PAE
Typical Fixtured Performance
Bias Conditions: Vd = 9V, Idq = 225mA
Advance Product Information
November 12, 2004
11
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Typical Fixtured Performance
Bias Conditions: Vd = 9V, Idq = 225mA
TGA2700-EPU
0
5
10
15
20
25
30
35
40
45
50
9
11
13
15
17
19
21
23
25
Output Power/Tone (dBm)
IMD
3 (dB
c
)
8 GHz
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
30
31
32
33
34
35
36
8
8.5
9
9.5
10
10.5
11
11.5
12
12.5
13
Frequency (GHz)
Output TOI
@
P
i
n =-5 dBm
Advance Product Information
November 12, 2004
12
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Typical Fixtured Performance
Bias Conditions: Vd = 9V, Idq = 225mA
TGA2700-EPU
30
31
32
33
34
35
36
37
12
14
16
18
20
22
24
26
Output Power/tone (dBm)
Output TOI (dBm)
8 GHz
9 GHz
10 GHz
11 GHz
12 GHz
Advance Product Information
November 12, 2004
13
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA2700-EPU
Mechanical Characteristics
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.



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Advance Product Information
November 12, 2004
14
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommended Assembly Diagram
TGA2700-EPU
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Advance Product Information
November 12, 2004
15
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
C for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200
C.
TGA2700-EPU