TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
July 16, 2003
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
CATV TIA/Gain Block
TGA2803-EPU-SM
Key Features and Performance
Low Cost 4 x 4 mm Surface Mount Package
20 dB Flat Gain
800
Transimpedance *
<5pA/
Hz Equivalent Input Noise Current *
1.5 dB 75
Noise Figure
Ultra-Low Distortion (45dBm IP3 typ.)
Wide Bandwidth (40MHz - 1GHz)
Low DC Power Consumption
Single Supply Bias (+8V)
Proven GaAs Technology
* Includes 1:1 balun, No photodiode or auto-transformer
Description
The TriQuint TGA2803-EPU is an ultra-linear, packaged
TIA/Gain Block which operates from 40MHz to
1000MHz. The amplifier is available in a standard 4x4
mm 20 lead MLP package. The amplifier provides flat
gain along with ultra-low distortion. It also provides high
output power with low DC power consumption. This
amplifier is ideally suited for use in CATV distribution
systems or other applications requiring extremely low
noise and distortion. Demonstration Boards are
available.
Bottom View
Top View
Primary Applications
HFC Nodes
CATV Line Amplifiers
Head End Equipment
0
4
8
12
16
20
24
0
200
400
600
800
1000
1200
Frequency (MHz)
G
a
in (
d
B)
Typical 75
Gain
w/External Balun Losses Removed
Input Referred Current Noise
with High Impedance source
75
Output TOI
35
39
43
47
51
55
0
100
200
300
400
500
600
700
800
900
Frequency (MHz)
OT
OI
(d
Bm)
0
1
2
3
4
5
6
0
200
400
600
800
1000
1200
Frequency (MHz)
Noi
s
e
Cur
r
e
nt(pA/
r
t(Hz))
TGA
2803
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
July 16, 2003
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2803-EPU-SM
Table II
DC Specifications
Symbol
Parameter
Typ
Unit
V
DD
Bias Supply Voltage
8
V
I
DD
Bias Supply Current
350
mA
V
G1
Gate 1 Voltage (Pin 19)
0.90
V
V
G2
Gate 2 Voltage (Pin 7)
2.66
V
V
out1
RF Output 1 Voltage (Pin 14/15)
V
DD
V
V
out2
RF Output 2 Voltage (Pin 11/12)
V
DD
V
Table I
Maximum Ratings 1/
Symbol
Parameter
Min
Max
Units
Notes
V
DD
Bias Supply Voltage
0
15
V
I
DD
Bias Supply Current
500
mA
1/ 2/
P
IN
RF Input Power
77
dBmV
3/
T
ASSY
Assembly Temperature (30 seconds max)
300
C
T
STG
Storage Temperature
-65
150
C
T
CASE
Package Operating Temperature (Heat Slug)
-40
110
C
1/
These values reflect maximum operable values for this device. Operating above the
recommended values may directly affect MTTF.
2/
Total Current
3/
Total Input Power
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
July 16, 2003
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Table III
RF Specifications 1/
T
A
=25
C, V
DD
=8V
Symbol
Parameter
Min
Typ
Max
Units
Note
BW
Bandwidth
40
870
MHz
S
21
Power Gain
20
dB
2/
GF
Gain Flatness
0.3
dB
2/
NF
Noise Figure
1.5
dB
2/
TZ
Transimpedance
800
I
n
Equivalent Input Current Noise
5
pA/rtHz
3/
IP
3
Two-Tone, Third-Order Intercept (450 MHz)
46
dBm
IRL
Input Return Loss
16
dB
ORL
Output Return Loss
20
dB
I
D
Drain Current
350
mA
4/
P1dB
Output Power at P1dB (450 MHz)
27
dBm
1/
Using electrical application circuit on pg. 8
2/
1:1 Balun losses have been removed from the measurement
3/
Measured with open-circuited input
4/
Increasing drain current will improve linearity of device
TGA2803-EPU-SM
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
July 16, 2003
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Typical Measured S-Parameters (75
)
Using Application Circuit
(includes effects of external baluns)
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
0
200
400
600
800
1000
1200
Frequency (MHz)
S11(
dB
)
0
4
8
12
16
20
24
0
200
400
600
800
1000
1200
Frequency (MHz)
S
21 (
d
B)
-40
-35
-30
-25
-20
-15
-10
-5
0
0
200
400
600
800
1000
1200
Frequency (MHz)
S12 (
d
B)
-40
-35
-30
-25
-20
-15
-10
-5
0
0
200
400
600
800
1000
1200
Frequency (MHz)
S22 (dB
)
TGA2803-EPU-SM
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
July 16, 2003
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
0
1
2
3
4
5
6
0
200
400
600
800
1000
1200
Frequency (M H z)
Nois
e
Curre
nt
(
pA/rt
(
H
z)
)
TGA2803-EPU-SM
Typical Measured Performance
Using Application Circuit
(includes effects of external baluns)
35
39
43
47
51
55
0
100
200
300
400
500
600
700
800
900
Frequency (MHz)
OTOI (
d
B
m
)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
200
400
600
800
1000
1200
Frequency(MHz)
N
o
i
se F
i
g
u
re(d
B
)
Input balun losses removed
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
July 16, 2003
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Mechanical Specifications
TGA2803-EPU-SM
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
July 16, 2003
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Pinout
Top Side
Dot indicates Pin 1
Bottom Side
Pin
Description
Pin
Description
1
RF Input 1
11
RF Output 2
2
RF Input 1
12
RF Output 2
3
NC
13, 21
GND
4
RF Input 2
14
RF Output 1
5
RF Input 2
15
RF Output 1
6
NC
16
NC
7
VG2 (Optional)
17
VDD (choked)
8
VDD
18
VDD
9
VDD (choked)
19
VG1 (Optional)
10
Isense 1/
20
NC
1/
Bias current monitor: I
bias
= V
Pin 10
/
4
TGA2803-EPU-SM
TGA
2803
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
July 16, 2003
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Recommended Electrical Assembly
Component Description
Ref
Description
C1
0.01
F Capacitor
C2
0.01
F Capacitor
C3
470pF Capacitor
C4
470pF Capacitor
C5
270pF Capacitor
C6
270pF Capacitor
L1
820nH Inductor
L2
820nH Inductor
T1
Balun 1/
T2
Balun 1/
1/
Balun performance impacts amplifier return losses and gain. Best performance can be
achieved by winding 34 or 36 gauge bifilar wire around a small binocular core made
from low-loss magnetic material. Suitable wire may be obtained from MWS Wire
Industries. Core vendors include Ferronics, Fairrite, TDK, and Micrometals.
Alternatively, off-the-shelf baluns can be purchased from a number of vendors
including Mini-Circuits (ADTL1-18-75), M/A-COM (ETC1-1-13), and Pulse Engineering
(CX2071).
TGA2803-EPU-SM
+8V
+8V
RF
OUT
TGA 2803
1
2
3
4
5
15
14
13
12
11
6
7
8
9
10
20 19 18 17 16
RF
IN
T1
T2
L1
C2
C3
C4
C5
C6
C1
L2
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
July 16, 2003
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2803-EPU-SM
Component Description
Ref
Description
C1
0.01
F Capacitor
C2
0.01
F Capacitor
C3
470pF Capacitor
C4
470pF Capacitor
C5
270pF Capacitor
C6
270pF Capacitor
L1
820nH Inductor
L2
820nH Inductor
T1
Balun 1/
T2
Balun 1/
PD
Broadband
Photodiode 2/
1/
Balun performance impacts amplifier return losses and gain. Best
performance can be achieved by winding 34 or 36 gauge bifilar wire
around a small binocular core made from low-loss magnetic material.
Suitable wire may be obtained from MWS Wire Industries. Core vendors
include Ferronics, Fairrite, TDK, and Micrometals.
Alternatively, off-the-shelf baluns can be purchased from a number of
vendors including Mini-Circuits (ADTL1-18-75), M/A-COM (ETC1-1-13),
and Pulse Engineering (CX2071).
2/
Emcore 2609C Broadband Photodiode Module is recommended. The
module includes a 4:1 impedance transformer.
Recommended Electro-Optical Assembly
+8V
Single-Mode
Fiber
PD
-15V
RFout
+8V
RF
OUT
TGA 2803
1
2
3
4
5
15
14
13
12
11
6 7
8 9 10
20 19 18 17 16
T1
T2
L1
C2
C3
C4
C5
C6
C1
L2
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