Advance Product Information
April 27, 2005
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
2 Watt 802.11a Packaged Amplifier TGA2922-SG
Key Features
4.9 - 6 GHz Application Frequency Range
11 dB Nominal Gain @ 8V 480mA
34 dBm Nominal P1dB @ 8V 480mA
2.5% EVM at 25dBm output power
IMD3 -50dBc @ 22dBm SCL, Typical
Bias Conditions: 7-9 V @ 480 mA (Quiescent)
0.5
m HFET Technology
2 lead Cu base SMT package
Fixtured Measured Performance
Bias Conditions: Vd = 8 V, Idq =480 mA
Performance data taken @ in a 5.75GHz
application circuit
Primary Applications
802.11a WLAN Bridge Amplifiers
U-NII Band HPA
C-Band Pt-Pt and Pt-Multi Pt Radio
The TGA2922-SG HPA provides
11dB of gain, 2 W of output power
across 4.9 - 6 GHz and 2.5% EVM
at 25 dBm output power. The device
is ideally suited for high linearity,
high power wireless data
applications such as 802.11a WLAN
Bridge Amplifiers, U-NII and Point-
to-Point or Point-to-Multi Point Non-
Line of Sight radios. The package
has a high thermal conductivity
copper base. Internal partial
matching simplifies system board
layout by requiring a minimum of
external components.
Lead-Free & RoHS compliant.
Evaluation Boards are available.
Product Description
0
4
8
12
16
20
24
28
32
36
40
9
11
13
15
17
19
21
23
25
27
29
31
Pin (dBm)
P
o
u
t
(d
Bm
) & Gain
(d
B)
300
400
500
600
700
800
IDS (m
A)
Pout
IDS
Gain
-12
-9
-6
-3
0
3
6
9
12
15
4
4.5
5
5.5
6
6.5
7
Frequency (GHz)
Gain (dB)
-20
-15
-10
-5
0
5
10
15
20
25
R
e
turn Loss (dB
)
Gain
Input
Output
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
Advance Product Information
April 27, 2005
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
MAXIMUM RATINGS 1/
Symbol
Parameter
Value
Notes
Vd
Drain Supply Voltage
10 V
2/
Vg
Gate Supply Voltage Range
0 V to -5 V
Idq
Drain Supply Current (Quiescent)
1 A
2/
| Ig |
Gate Current
19 mA
P
IN
Input Continuous Wave Power
30 dBm
2/
P
D
Power Dissipation
4.1 W
2/, 3/
T
CH
Operating Channel Temperature
175
C
4/
T
M
Mounting Temperature (30 Seconds)
260
C
T
STG
Storage Temperature
-65 to 150
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
When operated at this bias condition with a base plate temperature of 85
C, the MTTF life is 2 E+8
hours.
4/ Junction operating temperature will directly affect the device median time to failure (T
M
). For maximum
life, it is recommended that junction temperatures be maintained at the lowest possible levels.
TGA2922-SG
Advance Product Information
April 27, 2005
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE III
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
o
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal
Resistance
(channel to backside
of package)
Vd = 8 V
I
D
= 480 mA (Quiescent)
Pdiss = 3.8 W
168
22
4 E+8
Note: Package backside SnPb soldered to carrier at 85
C baseplate temperature.
At saturated output power, the DC power consumption is 5.8 W with 2 W RF power
delivered to the load. Power dissipated is 3.8 W and the temperature rise in the
channel is 84
C.
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, Nominal)
(Vd = 8 V, Idq = 480 mA)
SYMBOL
PARAMETER
TEST
CONDITION
TYPICAL
UNITS
Gain
Small Signal Gain
F = 5.75 GHz
11
dB
IRL
Input Return Loss
F = 5.75 GHz
7
dB
ORL
Output Return Loss
F = 5.75 GHz
7
dB
P1dB
Output Power @ P1dB
F = 5.75 GHz
34
dBm
TGA2922-SG
Advance Product Information
April 27, 2005
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 7 V, Idq = 480 mA
Measured Fixtured Data
Application Circuit tuned to 5.75 GHz
10
15
20
25
30
35
40
45
50
55
60
65
16
18
20
22
24
26
28
30
Output Power per tone (dBm)
IM
D3 (
d
Bc)
5.6GHz
5.7GHz
5.8GHz
5.9GHz
6.0GHz
0
4
8
12
16
20
24
28
32
36
40
9
11
13
15
17
19
21
23
25
27
29
31
Pin (dBm)
Po
u
t
(d
Bm) & Gain
(d
B)
300
400
500
600
700
800
IDS (mA)
Pout
IDS
Gain
-12
-9
-6
-3
0
3
6
9
12
15
4
4.5
5
5.5
6
6.5
7
Frequency (GHz)
G
ain (dB)
-20
-15
-10
-5
0
5
10
15
20
25
Return Loss (dB)
Gain
Input
Output
TGA2922-SG
Advance Product Information
April 27, 2005
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Measured Fixtured Data
Application Circuit tuned to 5.75 GHz
Bias Conditions: Vd = 8 V, Idq = 480 mA
15
20
25
30
35
40
45
50
55
60
65
16
18
20
22
24
26
28
30
Output Power per tone (dBm)
IMD3 (dBc)
5.6GHz
5.7GHz
5.8GHz
5.9GHz
6.0GHz
0
4
8
12
16
20
24
28
32
36
40
9
11
13
15
17
19
21
23
25
27
29
31
Pin (dBm)
P
out (dBm
) & Gain (dB)
300
400
500
600
700
800
IDS
(m
A)
Pout
IDS
Gain
-12
-9
-6
-3
0
3
6
9
12
15
4
4.5
5
5.5
6
6.5
7
Frequency (GHz)
Gain (dB)
-20
-15
-10
-5
0
5
10
15
20
25
Ret
urn Loss (
d
B)
Gain
Input
Output
TGA2922-SG
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