Advance Product Information
Aug 16, 2005
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
10 Watt MMDS Packaged Amplifier TGA2923-SG
Key Features
3.5 GHz Application Frequency Range
9 dB Nominal Gain
10 Watt Nominal Psat
2.5% EVM at 30 dBm output power
IMD3 -45 dBc @ 28 dBm SCL, Typical
Bias Conditions: 8 V @ 1.2 A (Quiescent)
0.5
m HFET Technology
2 lead Cu-alloy base and internally partially
matched package
Fixtured Measured Performance
Bias Conditions: Vd = 8 V, Idq =1.2 A
Performance data taken in a 3.5 GHz application circuit
Primary Applications
802.16 Broadband Wireless
WiMAX
The TGA2923-SG HPA provides 9
dB of gain, 10 W of output power at
3.5 GHz and 2.5% EVM at 30 dBm
output power for OFDM 64 QMA.
The device is ideally suited for high
linearity, high power wireless data
applications such as 802.16 and
WiMAX. The package has a high
thermal conductivity copper alloy
base. Internal partial matching
simplifies system board layout by
requiring a minimum of external
components.The device can be
tuned to 3.3 - 3.8GHz range in 200
MHz bandwidth. 2 object
components (C4 & C5) can be
tuned for bandwidth.
Lead-Free & RoHS compliant.
Evaluation Boards are available.
Product Description
-25
-20
-15
-10
-5
0
5
10
15
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
Frequency (GHZ)
S Pa
ra
me
t
e
r (
d
B)
S21
S22
S11
37
37.5
38
38.5
39
39.5
40
3.3
3.4
3.5
3.6
3.7
3.8
Frequency (GHz)
O
u
tput P
o
w
e
r (dBm
)
P2dB
P1dB
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
Advance Product Information
Aug 16, 2005
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
MAXIMUM RATINGS 1/
Symbol
Parameter
Value
Notes
Vd
Drain Supply Voltage
10 V
2/
Vg
Gate Supply Voltage Range
0 V to -5 V
Id
Drain Supply Current
4 A
2/
| Ig |
Gate Current
39 mA
P
IN
Input Continuous Wave Power
36 dBm
2/
P
D
Power Dissipation
11.2 W
2/, 3/
T
CH
Operating Channel Temperature
175
C
4/
T
M
Mounting Temperature (30 Seconds)
260
C
T
STG
Storage Temperature
-65 to 150
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
3/
When operated at this bias condition with a base plate temperature of 85
C, the MTTF
life is 2 E+8 hours.
4/ Junction operating temperature will directly affect the device median time to failure (T
M
).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
TGA2923-SG
Advance Product Information
Aug 16, 2005
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE III
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
o
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal
Resistance
(channel to backside
of package)
Vd = 8 V
I
D
= 1.2 A
Pdiss = 9.6 W
162
8
7.7 E+8
Note: Package backside was soldered to carrier at 85
C baseplate temperature. At
saturated output power, the DC power consumption is 20W with 10W RF power
delivered to the load and 10W dissipated. Adding the 1W RF input power results in
11W total power dissipation and a maximum channel temperature of 173
C at 85
C
baseplate temperature.
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, Nominal)
(Vd = 8 V, Idq = 1.2 A)
SYMBOL
PARAMETER
TEST
CONDITION
TYPICAL
UNITS
Gain
Small Signal Gain
f = 3.5 GHz
9
dB
IRL
Input Return Loss
f = 3.5 GHz
12
dB
ORL
Output Return Loss
f = 3.5 GHz
15
dB
Psat
Saturated Output Power
f = 3.5 GHz
40
dBm
TGA2923-SG
Advance Product Information
Aug 16, 2005
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 1.2 A
Measured Fixtured Data
Application Circuit tuned to 3.5 GHz
TGA2923-SG
-50
-40
-30
-20
-10
0
10
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Frequency (GHZ)
S Parameter (dB)
S21
S22
S11
S12
26
28
30
32
34
36
38
40
42
18
20
22
24
26
28
30
32
34
36
Pin (dBm)
Pout (dBm)
3.5GHz
3.55GHz
3.6GHz
3.65GHz
3.7GHz
Advance Product Information
Aug 16, 2005
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 1.2 A
Measured Fixtured Data
Application Circuit tuned to 3.5 GHz
TGA2923-SG
0
5
10
15
20
25
30
35
40
45
50
18
20
22
24
26
28
30
32
34
36
Pin (dBm)
PA
E (%
)
3.5GHz
3.55GHz
3.6GHz
3.65GHz
3.7GHz
1100
1300
1500
1700
1900
2100
2300
2500
18
20
22
24
26
28
30
32
34
36
Pin (dBm)
Id
(mA
)
3.5GHz
3.55GHz
3.6GHz
3.65GHz
3.7GHz
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