Advance Product Information
Aug 16, 2005
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
-25
-20
-15
-10
-5
0
5
10
15
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
Frequency (GHz)
S-Par
ameter
(d
B
)
10 Watt MMDS Packaged Amplifier TGA2924-SG
Key Features
2. 6 GHz Application Frequency Range
12 dB Nominal Gain
40 dBm Nominal Psat
2.5% EVM at 30 dBm output power
Internally Partially Matched
IMD3 -45 dBc @ 28 dBm SCL, Typical
Bias Conditions: 8 V @ 1.2 A (Quiescent)
0.5
m HFET Technology
2 lead Cu-alloy base package
Fixtured Measured Performance
Bias Conditions: Vd = 8 V, Idq =1.2 A
Performance data taken in a 2.6 GHz application circuit
Primary Applications
MMDS Pt-Pt and Pt-Multi Pt Radio
S-Band Power Amplifiers
The TGA2924-SG HPA provides 12
dB of gain, 10 W of output power at
2.6 GHz and 2.5% EVM at 30 dBm
output power. The device is ideally
suited for high linearity, high power
wireless data applications such as
MMDS Point-to-Point or Point-to-
Multi-Point radios. The package has
a high thermal conductivity copper
alloy base. Internal partial matching
simplifies system board layout by
requiring a minimum of external
components.
Lead-Free & RoHS compliant.
Evaluation Boards are available.
Product Description
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
S21
S11
S22
35.5
36
36.5
37
37.5
38
38.5
39
39.5
40
40.5
2.4
2.45
2.5
2.55
2.6
2.65
2.7
2.75
2.8
Frequency (GHz)
Output Power (dBm)
P1dB
P2dB
Advance Product Information
Aug 16, 2005
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
MAXIMUM RATINGS 1/
Symbol
Parameter
Value
Notes
Vd
Drain Supply Voltage
10 V
2/
Vg
Gate Supply Voltage Range
0 V to -5 V
Idq
Drain Supply Current (Quiescent)
4 A
2/
| Ig |
Gate Current
39 mA
P
IN
Input Continuous Wave Power
39 dBm
2/
P
D
Power Dissipation
11.2 W
2/, 3/
T
CH
Operating Channel Temperature
175
C
4/
T
M
Mounting Temperature (30 Seconds)
260
C
T
STG
Storage Temperature
-65 to 150
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
3/
When operated at this bias condition with a base plate temperature of 85
C, the MTTF
life is 2 E+8 hours.
4/ Junction operating temperature will directly affect the device median time to failure (T
M
).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
TGA2924-SG
Advance Product Information
Aug 16, 2005
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE III
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
o
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal
Resistance
(channel to backside
of package)
Vd = 8 V
I
D
= 1.2 A
Pdiss = 9.6 W
162
8
7.7 E+8
Note: Package backside SnPb soldered to carrier at 85
C baseplate temperature.
At saturated output power, the DC power consumption is 20W with 10W RF power
delivered to the load and 10W dissipated. Adding the 1W RF input power results in
11W total power dissipation and a maximum channel temperature of 173
C at 85
C
baseplate temperature.
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, Nominal)
(Vd = 8 V, Idq = 1.2 A)
SYMBOL
PARAMETER
TEST
CONDITION
TYPICAL
UNITS
Gain
Small Signal Gain
f = 2.6 GHz
12
dB
IRL
Input Return Loss
f = 2.6 GHz
6
dB
ORL
Output Return Loss
f = 2.6 GHz
10
dB
Psat
Saturated Output Power
40
dBm
TGA2924-SG
Advance Product Information
Aug 16, 2005
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 1.2 A
Measured Fixtured Data
Application Circuit tuned to 2.6 GHz
TGA2924-SG
35.5
36
36.5
37
37.5
38
38.5
39
39.5
40
40.5
2.4
2.45
2.5
2.55
2.6
2.65
2.7
2.75
2.8
Frequency (GHz)
Out
put
Power (
d
B
m
)
P1dB
P2dB
-25
-20
-15
-10
-5
0
5
10
15
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
Frequency (GHz)
S-Parameter (dB)
S11
S21
S22
Advance Product Information
Aug 16, 2005
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 1.2 A
Measured Fixtured Data
Application Circuit tuned to 2.6 GHz
TGA2924-SG
27
29
31
33
35
37
39
41
19
21
23
25
27
29
31
33
35
Pin (dBm)
P
out (dBm
)
2.45GHz
2.5GHz
2.55GHz
2.6GHz
2.65GHz
2.7GHz
2.75GHz
0
5
10
15
20
25
30
35
40
45
50
19
21
23
25
27
29
31
33
35
Pin (dBm)
PA
E (%)
2.45GHz
2.5GHz
2.55GHz
2.6GHz
2.65GHz
2.7GHz
2.75GHz
1200
1400
1600
1800
2000
2200
2400
19
21
23
25
27
29
31
33
35
Pin (dBm)
Id (
A
)
2.45GHz
2.5GHz
2.55GHz
2.6GHz
2.65GHz
2.7GHz
2.75GHz
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