Advance Product Information
October 13, 2003
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
10 Gb/s Single Ended to Differential Amplifier TGA2951-EPU
Key Features and Performance
3dB Bandwidth: 9.5 GHz
21 dB Differential Gain
Single Ended In, Differential Out
Crossing Adjustment (XOVR)
Output Level Adjust (OUTLVL)
Up to 1.5 Vpp Differential Out
Output Power Detector
0.25m 3MI pHEMT Technology
Self Bias: V
D
= 5V, I
D
= 72 mA
Chip dimensions: 1.00 x 1.10 x 0.1 mm
(0.039 x 0.043 x 0.004 inches)
Preliminary Measured Performance
Bias Conditions: V
D
= 5V, I
D
= 72 mA
Primary Applications
OC-192/STM-64 Fiber Optic
Systems
10.7 Gb/s 70mVpp Input (N/C) Vadj
0
3
6
9
12
15
18
21
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Single
Ende
d Ga
in (dB)
RF Out (+) S21
RF Out (-) S31
Product Description
The TriQuint TGA2951-EPU is a
Single Ended to
Differential Amplifier
for OC-192/STM-64 Fiber Optic
System receive chains. The TGA2951-EPU
provides a Single ended to differential Conversion
with gain.
The part is designed using TriQuint's proven
standard 0.25 um gate Power pHEMT production
process.
The TGA2951-EPU is 100% DC and RF tested
on-wafer to ensure performance compliance.
Advance Product Information
October 13, 2003
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA2951-EPU
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
V
+
Positive Supply Voltage
5.5 V
2/
I
+
Positive Supply Current
84 mA
2/
P
IN
Input Continuous Wave Power
15 dBm
2/
P
D
Power Dissipation
462 mW
2/, 3/
T
CH
Operating Channel Temperature
150
C
4/, 5/
T
M
Mounting Temperature (30 Seconds)
320
C
T
STG
Storage Temperature
-65 to 150
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
3/
When operated at this power dissipation with a base plate temperature of 70
C, the median
life is 1 E+6 hours.
4/
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
5/
These ratings apply to each individual FET.
Advance Product Information
October 13, 2003
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
C, Nominal)
Bias Conditions: V
D
= 5V, I
D
= 72 mA
Parameter
Conditions
Typical
Units
Differential Gain
1 GHz
21
dB
3dB Bandwidth
9.5
GHz
Small Signal Gain Delta
1 9 GHz
0.25
dB
Input Return Loss
1 9 GHz
15
dB
Output Return Loss (S22, S33)
1 9 GHz
15
dB
Insertion Phase Delta
1 9 GHz
180
2
deg
Group Delay Ripple
Reference to 1 GHz
4
ps
Nominal Crossing Level
Over Output
Operating Range
50
%
Crossing Level Adjustment
10
%
Output Adjustment
15
dB
Detector Output
Output levels
0 650 Vpp S/E
0 150
mV
Note: Table II lists the RF Characteristics of typical devices as determined by fixtured
measurements.
TGA2951-EPU
Advance Product Information
October 13, 2003
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Preliminary Measured Performance
Bias Conditions: V
D
= 5V, I
D
= 72 mA
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
R
e
turn Loss (dB
)
RF Out (+) S22
RF Out (-) S33
RF In
0
3
6
9
12
15
18
21
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Single Ended Gain (dB
)
RF Out (+) S21
RF Out (-) S31
TGA2951-EPU
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
0
20
40
60
80
100
120
140
160
180
200
G
r
ou
p D
e
l
a
y
(
p
s
)
Advance Product Information
October 13, 2003
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Input R
e
tun Loss (dB
)
-50 deg C
-25 deg C
0 deg C
25 deg C
75 deg C
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
P
o
sitive Output Retur
n
Loss (dB)
-50 deg C
-25 deg C
0 deg C
25 deg C
75 deg C
-5
0
5
10
15
20
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
S
i
ngl
e E
nded G
a
i
n
(
d
B
)
-50 deg C
-25 deg C
0 deg C
25 deg C
75 deg C
Preliminary Measured Performance
Bias Conditions: V
D
= 5V, I
D
= 72 mA
TGA2951-EPU
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