Advance Product Information
July 9, 2003
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
4 Watt Ka Band HPA
TGA4505-EPU
Primary Applications
Satellite Ground Terminal
Point-to-Point Radio
Key Features
Frequency Range: 24-32 GHz
23 dB Nominal Gain
35.5 dBm Nominal P1dB @30 GHz
36.0 dBm Nominal Psat @30 GHz
40 dBc at SCL Pout 20dBm
0.25 um pHEMT 2MI Technology
Bias 6 V @ 2.1 A Idq
Chip size 4.3 x 3.0 x .05 mm
Fixtured Data
Bias Conditions: Vd = 6 V, Idq = 2.1A
Product Description
The TriQuint TGA4505-EPU is a compact
4 Watt High Power Amplifier MMIC for
Ka-band applications. The part is
designed using TriQuint's proven
standard 0.25 um gate Power pHEMT
production process.
The TGA4505 provides a nominal 35.5
dBm of output power at 1 dB gain
compression from 24-32 GHz with a small
signal gain of 23 dB.
The part is ideally suited for low cost
emerging markets such as base station
transmitters for satellite ground terminals
and point to point radio.
The TGA4505-EPU is 100% DC and RF
tested on-wafer to ensure performance
compliance.
30
31
32
33
34
35
36
37
38
26
27
28
29
30
31
32
Frequency (GHz)
Power (dBm
)
P1dB
Psat
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
G
a
in (dB
)
-30
-24
-18
-12
-6
0
6
12
18
24
30
36
R
e
turn Loss (dB
)
Input
Output
Gain
Advance Product Information
July 9, 2003
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
+
Positive Supply Voltage
8 V
2/
V
-
Negative Supply Voltage Range
-5V TO 0V
I
+
Positive Supply Current:
Quiescent
Under RF Drive
3 A
4 A
2/
| I
G
|
Gate Supply Current
62 mA
P
IN
Input Continuous Wave Power
24 dBm
2/
P
D
Power Dissipation
18.4 W
2/, 3/
T
CH
Operating Channel Temperature
150
0
C
4/, 5/
T
M
Mounting Temperature
(30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
When operated at this bias condition with a base plate temperature of 70
0
C, the median
life is 4.6 E+5 hours.
4/ Junction operating temperature will directly affect the device median time to failure (T
M
). For maximum
life, it is recommended that junction temperatures be maintained at the lowest possible levels.
5/
These ratings apply to each individual FET.
TABLE II
DC PROBE TEST
(T
A
= 25
C, nominal)
LIMITS
NOTES
SYMBOL
MIN
MAX
UNITS
1/
I
DSS(Q35)
15
70.5
mA
1/
G
M (Q35)
33
79.5
mS
1/, 2/
|V
P(Q1, Q9, Q35)
|
0.5
1.5
V
1/, 2/
|V
BVGS(Q35)
|
11
30
V
1/, 2/
|V
BVGD(Q35)
|
11
30
V
1/ Q35 is a 150 um Test FET
2/ V
P
, V
BVGD
, and V
BVGS
are negative.
TGA4505-EPU
Advance Product Information
July 9, 2003
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25
C, Nominal)
(Vd = 6V, Id = 2.1A)
SYMBOL
PARAMETER
TEST
CONDITION
TYPICAL
UNITS
Gain
Small Signal Gain
F = 24-32 GHz
23
dB
IRL
Input Return Loss
F = 24-32 GHz
6
dB
ORL
Output Return Loss
F = 24-32 GHz
12
dB
PWR
Output Power @ P1dB
F = 24-31 GHz
35
dBm
Note: Table III Lists the RF Characteristics of typical devices as determined by
fixtured measurements.
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
o
C)
R
JC
(
C/W)
T
M
(HRS)
R
JC
Thermal
Resistance
(channel to backside of
carrier)
Vd = 6V
I
D
= 2.05 A
Pdiss = 12.3 W
128
4.7
7.4E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
CuMo Carrier at 70
C baseplate temperature. Worst case condition with no RF
applied, 100% of DC power is dissipated.
TGA4505-EPU
Advance Product Information
July 9, 2003
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 2.1 A
30
31
32
33
34
35
36
37
38
26
27
28
29
30
31
32
Frequency (GHz)
Power (dBm)
P1dB
Psat
TGA4505-EPU
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
Gain (dB)
-30
-24
-18
-12
-6
0
6
12
18
24
30
36
R
e
turn Loss (dB
)
Input
Output
Gain
Advance Product Information
July 9, 2003
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 2.1 A
TGA4505-EPU
0
10
20
30
40
50
60
12
14
16
18
20
22
24
26
28
30
32
Output Power per tone (dBm)
IMD3 (dBc)
24 GHz
25 GHz
26 GHz
27 GHz
28 GHz
29 GHz
30 GHz
31 GHz
32 GHz
Data taken @ 30 GHz
0
5
10
15
20
25
30
35
40
-5
-3
-1
1
3
5
7
9
11
13
15
17
19
Pin (dBm)
Pout
(
d
Bm)
& Pow
e
r
Gain (dB
)
1.8
2.1
2.4
2.7
3
3.3
3.6
3.9
4.2
Ids (A)
Pout
Gain
Ids
PDF 
ZIP