TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 19, 2003
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
-40
-30
-20
-10
0
10
20
30
15
17
19
21
23
25
27
29
31
33
35
Frequency (GHz)
G
a
i
n
& Re
t
u
r
n
L
o
s
s
(
d
B)
K Band Low Noise Amplifier TGA4506-EPU
Key Features
Typical Frequency Range: 20 - 27 GHz
21 dB Nominal Gain
2.2 dB Nominal Noise Figure
12 dBm Nominal P1dB
Bias 3.5 V, 60 mA
0.15 um 3MI pHEMT Technology
Chip Dimensions 1.2 x 0.8 x 0.1 mm
(0.047 x 0.031 x 0.004) in
Primary Applications
Point-to-Point Radio
Point-to-MultiPoint Radio
LMDS
Preliminary Measured Data
Bias Conditions: Vd = 3.5 V, Id = 60 mA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
20
21
22
23
24
25
26
Frequency (GHz)
N
o
i
s
e
Fi
gur
e
(
d
B
)
ORL
Gain
IRL
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 19, 2003
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Drain Voltage
5 V
2/
Vg
Gate Voltage Range
-1 TO +0.5 V
Id
Drain Current
190 mA
2/ 3/
Ig
Gate Current
6 mA
3/
P
IN
Input Continuous Wave Power
TBD
P
D
Power Dissipation
TBD
2/ 4/
T
CH
Operating Channel Temperature
150
0
C
5/ 6/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
Total current for the entire MMIC.
4/
When operated at this bias condition with a base plate temperature of TBD, the median life is
reduced from TBD to TBD hrs.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/
These ratings apply to each individual FET.
TGA4506-EPU
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 19, 2003
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C Nominal)
TGA4506-EPU
PARAMETER
TYPICAL
UNITS
Drain Voltage, Vd
3.5
V
Drain Current, Id
60
mA
Gate Voltage, Vg
-0.5 to +0.5
V
Small Signal Gain, S21
21
dB
Input Return Loss, S11
15
dB
Output Return Loss, S22
11
dB
Noise Figure, NF
2.2
dB
Output Power @ 1 dB Compression Gain, P1dB
12
dBm
TABLE II
DC PROBE TESTS
(Ta = 25
0
C Nominal)
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
VALUE
V
P3
Pinch-off Voltage
-1.0
-0.1
V
Q3 is 300 um FET
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 19, 2003
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
8
10
12
14
16
18
20
22
24
15
17
19
21
23
25
27
29
31
33
35
Frequency (GHz)
G
a
in
(
d
B
)
TGA4506-EPU
Preliminary Measured Data
Bias Conditions: Vd = 3.5 V, Id = 60 mA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
20
21
22
23
24
25
26
Frequency (GHz)
No
i
s
e
F
i
g
u
r
e
(
d
B)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 19, 2003
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
-40
-35
-30
-25
-20
-15
-10
-5
0
15
17
19
21
23
25
27
29
31
33
35
Frequency (GHz)
I
n
p
u
t R
e
tur
n
Los
s
(d
B
)
TGA4506-EPU
Preliminary Measured Data
Bias Conditions: Vd = 3.5 V, Id = 60 mA
-40
-35
-30
-25
-20
-15
-10
-5
0
15
17
19
21
23
25
27
29
31
33
35
Frequency (GHz)
O
u
t
p
ut
R
e
tu
r
n
Lo
s
s
(
d
B
)
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