TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 11, 2005
1
Product Description
The TriQuint TGA4509-SM is a
Ka-Band Packaged 1W Power Amplifier.
The TGA4509-SM operates from 28-31
GHz and is designed using TriQuint's
proven standard 0.25 um power pHEMT
production process.
The TGA4509-SM typically provides 30
dBm of output power at 1 dB gain
compression with small signal gain of 19
dB.
The TGA4509-SM is available in a low-
cost, surface mount 4x4 QFN style
package and is ideally suited for Ka-
band VSAT Ground Terminal, Point-to-
Point Radio and Point-to-Multipoint
applications.
Evaluation Boards are available upon
request.
Lead-free and RoHS compliant.
Primary Applications
Ka-Band VSAT Ground Terminal
Point-to-Point Radio
Point-to-Multipoint Communications
Ka-Band Packaged 1W PA
TGA4509-SM
Key Features
Frequency Range: 28-31 GHz
30 dBm Nominal P1dB
19 dB Nominal Gain
Bias Conditions: Vd = 6 V, Idq_tot = 420 mA
(Id = 800mA under RF drive)
Compact 4 x 4 QFN with 20 leads
Package Dimensions: 4.0 x 4.0 x 0.9 mm
Measured Performance
Bias Conditions: Vd = 6V, Idq = 420mA
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
0
2
4
6
8
10
12
14
16
18
20
22
24
28
28.5
29
29.5
30
30.5
31
Frequency (GHz)
G
a
i
n
(dB)
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Re
tur
n
Los
s
(dB)
Gain
Input
Output
23
24
25
26
27
28
29
30
31
32
33
28
28.5
29
29.5
30
30.5
31
Frequency (GHz)
Output Powe
r
(dBm)
P1dB
Psat
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 11, 2005
2
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
+
Positive Supply Voltage
7 V
2/
V
-
Negative Supply Voltage Range
-5V to 0V
I
+
Positive Supply Current
984 mA
2/
| I
G
|
Gate Supply Current
35 mA
P
IN
Input Continuous Wave Power
22 dBm
2/
P
D
Power Dissipation
See Note 3
2/ 3/
T
CH
Operating Channel Temperature
150
C
4/ 5/
T
M
Mounting Temperature (30 Seconds)
260
C
T
STG
Storage Temperature
-65 to 150
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
3/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
P
D(max)
= (150
C T
BASE
C) / 22.4 (
C/W)
4/
These ratings apply to each individual FET.
5/
Junction operating temperature will directly affect the device median time to failure (T
M
).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
TGA4509-SM
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 11, 2005
3
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, Nominal)
Bias Conditions: Vd = 6V, Idq = 420mA
SYMBOL
PARAMETER
TEST CONDITION
NOMINAL
UNITS
Gain
Small Signal Gain
f = 28-31 GHz
19
dB
IRL
Input Return Loss
f = 28-31 GHz
16
dB
ORL
Output Return Loss
f = 28-31 GHz
10
dB
Psat
Saturated Output Power
f = 28-31 GHz
30.5
dBm
P1dB
Output Power @ 1dB
Compression
f = 28-31 GHz
30
dBm
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITION
T
CH
(
q
C)
R
T
jc
(
q
C/W)
MTTF
(HRS)
R
jc
Thermal Resistance
(Channel to package)
V
D
= 6V
I
Dq
= 420mA
P
Diss
= 2.52 W
141
22.4
2.2 E+6
Note: Backside of package is at 85
C baseplate temperature. Worst case is
at saturated output power when DC power consumption rises to 4.8 W with
1 W RF power delivered to load. Power dissipated is 3.8 W and the
temperature rise in the channel is 85
C. Baseplate temperature must be
reduced to 65
C to remain below the 150
C maximum channel
temperature.
TGA4509-SM
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 11, 2005
4
0
2
4
6
8
10
12
14
16
18
20
22
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Gain (dB)
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Return Loss (dB)
Gain
Input
Output
0
2
4
6
8
10
12
14
16
18
20
22
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Gain (dB)
-40 deg C
+25 deg C
+80 deg C
Measured Performance
Bias Conditions: Vd = 6 V, Idq = 420 mA
TGA4509-SM
* Note:
Temperature data is taken using connectorized evaluation boards.
The reference plane is at RF connectors, and hence connector and
board loss has not been de-embedded.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 11, 2005
5
Measured Performance
Bias Conditions: Vd = 6 V, Idq = 420 mA
TGA4509-SM
0
3
6
9
12
15
18
21
24
27
30
33
-18
-14
-10
-6
-2
2
6
10
14
18
Input Power @ 30 GHz (dBm)
Gain (dB) & Pout (dBm)
0
100
200
300
400
500
600
700
800
900
1000
1100
Ids (mA)
Pout
Gain
Ids
23
24
25
26
27
28
29
30
31
32
33
28
28.5
29
29.5
30
30.5
31
31.5
32
Frequency (GHz)
Output Power
(dBm)
P1dB
Psat
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