Advance Product Information
Dec 14, 2004
1
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
-25
-20
-15
-10
-5
0
5
10
15
20
25
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
G
a
in
(
d
B
)
27 - 31 GHz 2W Balanced Power Amplifier TGA4513
Key Features
27 - 31 GHz Bandwidth
> 32 dBm P1dB
33 dBm Psat
20 dB Nominal Gain
IMR3 is 37 dBc @ 18 dBm SCL
14 dB Nominal Return Loss
Bias: 6 V, 840 mA
0.25 um 3MI MMW pHEMT Technology
Chip Dimensions: 2.8 x 2.2 x 0.1 mm
(0.110 x 0.087 x 0.004) in
Primary Applications
Satellite Ground Terminal
Point to Point Radio
Point to Multi Point Radio
LMDS
Measured Data
Bias Conditions: Vd = 6 V, Id = 840 mA
ORL
IRL
Gain
28
29
30
31
32
33
34
35
26
27
28
29
30
31
32
33
Frequency (GHz)
Po
u
t
(
d
B
m
)
P1dB
Psat
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
Advance Product Information
Dec 14, 2004
2
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
V
+
Positive Supply Voltage
7 V
2/
V
-
Negative Supply Voltage Range
-3 TO 0 V
I
+
Positive Supply Current
1.05 A
2/
I
G
Gate Supply Current
10 mA
3/
P
IN
Input Continuous Wave Power
22 dBm
P
D
Power Dissipation
6.71W
2/ 4/
T
CH
Operating Channel Temperature
150
0
C 5/ 6/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
Total current for the entire MMIC.
4/
When operated at this bias condition with a base plate temperature of 70
o
C, the median life is
1.0E+6 hrs.
5/
Junction iperating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/
These ratings apply to each individual FET.
TGA4513
Advance Product Information
Dec 14, 2004
3
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C, Nominal)
TGA4513
PARAMETER
TYPICAL
UNITS
Drain Operating
6
V
Quiescent Current
840
mA
Small Signal Gain, S21
20
dB
Input Return Loss, S11
14
dB
Output Return Loss, S22
14
dB
Reverse Isolation, S12
-40
dB
Output Power @ 1 dB Compression Gain, P1dB
> 32
dBm
Power @ saturated, Psat
33
dBm
IMR3 @ 18 dBm SCL
37
dBc
TABLE II
DC PROBE TESTS
(T
A
= 25
C Nominal)
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
VALUE
I
DSS1
Saturated Drain Current
60
282
V
G
M1
Transconductance
132
318
mS
V
BVGS1
Breakdown Voltage gate-source
-30
-8
V
V
BVGD1
Breakdown Voltage gate-drain
-30
-11
V
V
P1,8
Pinch-off Voltage
-1.5
-0.5
V
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
q
C)
T
JC
(
q
C/W)
T
M
(hrs)
JC
Thermal Resistance
(Channel to Backside of
Package)
V
D
= 6 V
I
D
= 0.84 A (Quiescent)
P
DISS
= 5.04 W
Tbase = 70
C
130.1
11.92
5.9 E+6
Advance Product Information
Dec 14, 2004
4
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
0
2
4
6
8
10
12
14
16
18
20
22
24
26
25
26
27
28
29
30
31
32
33
34
35
Fre que ncy (GHz)
Ga
in
(
d
B
)
TGA4513
Measured Data
Bias Conditions: Vd = 6 V, Id = 840 mA
-
40
0
C
+
70
0
C
Bias Conditions: Vd = 6 V, Id = 40 mA
+
25
0
C
28
29
30
31
32
33
34
35
26
27
28
29
30
31
32
33
Frequency (GHz)
P1
d
B
(
d
B
m
)
Psa t
P1dB
Advance Product Information
Dec 14, 2004
5
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
O
u
tpu
t
R
e
tur
n
L
o
s
s
(
d
B
)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
I
npu
t
R
e
t
u
r
n
Los
s
(
d
B
)
TGA4513
Measured Data
Bias Conditions: Vd = 6 V, Id = 840 mA
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