TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2003
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
-30
-25
-20
-15
-10
-5
0
5
10
15
56 57 58 59 60 61 62 63 64 65 66 67 68 69 70
Frequency (GHz)
Sm
a
ll
S
i
g
n
a
l
(
d
B
)
60GHz Low Noise Amplifier TGA4600-EPU
Key Features
Typical Frequency Range: 57 - 65 GHz
4 dB Nominal Noise Figure
13 dB Nominal Gain
Bias 3.0 V, 41 mA
0.15 um 3MI pHEMT Technology
Chip Dimensions 1.62 x 0.84 x 0.10 mm
(0.064 x 0.033 x 0.004 in)
Primary Applications
Wireless LAN
Point-to-Point Radio
RF Probe Data
Bias Conditions: Vd = 3.0 V, Id =41 mA
IRL
ORL
GAIN
0
1
2
3
4
5
6
7
8
56 57 58 59 60 61 62 63 64 65 66 67 68 69 70
Frequency (GHz)
No
i
se Fi
gure (
d
B
)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2003
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Drain Voltage
5 V
2/
Vg
Gate Voltage Range
-1 TO +0.5 V
Id
Drain Current
200 mA
2/ 3/
Ig
Gate Current
5 mA
3/
P
IN
Input Continuous W ave Power
15 dBm
P
D
Power Dissipation
0.39W
2/ 4/
T
CH
Operating Channel Temperature
150
0
C
5/ 6/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
Total current for the entire MMIC.
4/
W hen operated at this bias condition with a base plate temperature of 70
0
C, the median life is
1.0E+6 hrs.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/
These ratings apply to each individual FET.
TGA4600-EPU
TABLE II
DC PROBE TESTS
(Ta = 25
0
C, Nominal)
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNITS
V
BVGD, Q1-Q3
Breakdown Voltage Gate-Source
-30
-5
V
V
BVGS, Q3
Breakdown Voltage Gate-Source
-30
-5
V
V
P, Q1,2,3
Pinch-off Voltage
-1.0
-0.1
V
Q1 is 100 um FET, Q2 is 100 um FET, Q3 is 210 um FET.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2003
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C Nominal)
TGA4600-EPU
PARAMETER
TYPICAL
UNITS
Frequency Range
57 - 65
GHz
Drain Voltage, Vd
3.0
V
Drain Current, Id
41
mA
Gate Voltage, Vg
-0.5 - 0
V
Small Signal Gain, S21
13
dB
Input Return Loss, S11
20
dB
Output Return Loss, S22
6
dB
Noise Figure, NF
4
dB
TABLE IV
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
T
CH
(
O
C)
R
JC
(
C/W)
T
M
(HRS)
R
JC
Thermal Resistance
(channel to Case)
Vd = 3 V
Id = 41 mA
Pdiss = 0.12 W
80
83
1.2 E+9
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
o
C baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2003
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
5
6
7
8
9
10
11
12
13
14
15
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
Frequency (GHz)
G
a
in
(d
B
)
TGA4600-EPU
RF Probe Data
Bias Conditions: Vd = 3.0 V, Id = 41 mA
0
1
2
3
4
5
6
7
8
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
Frequency (GHz)
No
i
se F
i
g
u
r
e
(
d
B
)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2003
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA4600-EPU
RF Probe Data
Bias Conditions: Vd = 3.0 V, Id = 41 mA
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
Frequency (GHz)
I
n
put
R
e
t
u
r
n
Lo
ss (
d
B)
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
Frequency (GHz)
O
u
tp
u
t
R
e
tu
rn
L
o
s
s
(d
B
)
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