TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
November 16, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
10Gb/s Differential TIA
TGA4815-EPU
Key Features and Performance
6500
Single-Ended
Transimpedance
>10GHz 3dB Bandwidth
1.7mA
pp
Maximum Input Current
9pA/
Hz Input Noise Current
Adjustable Output Offset
Rx Signal Indicator (RSSI)
0.15m 3MI pHEMT Technology
Bias Conditions: 3.3V, 80mA
Chip dimensions:
1.78 x 0.96 x 0.1 mm
(0.070 x 0.038 x 0.004 inches)
Preliminary Measured Performance
Bias Conditions: VPOS=3.3V, IPOS=80mA
Primary Applications
OC-192/STM-64 Fiber Optic
Systems
10.7Gb/s, 2
31
-1 PRBS, Optical Pin = -14 dBm
48
54
60
66
72
78
84
1
3
5
7
9
11
13
15
Frequency (GHz)
Tr
ansimpedance (dB
-
O
h
m)
-18
-15
-12
-9
-6
-3
0
O
u
tput Return Loss (dB)
Differential TZ
Non-Inverting Output
Inverting Output
CPD = 0.2 pF
RPD = 15 Ohm
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
November 16, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA4815-EPU
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
VPOS
Positive Supply Voltage
5.5 V
2/
IPOS
Positive Supply Current (Quiescent)
90 mA
2/
P
IN
Input Continuous Wave Power
14.5 dBm
2/
P
D
Power Dissipation
TBD
2/
T
CH
Operating Channel Temperature
150
0
C
3/ 4/
T
M
Mounting Temperature
(30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power
shall not exceed P
D
.
3/
These ratings apply to each individual FET.
4/
Junction operating temperature will directly affect the device median time to
failure (T
M
). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
November 16, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, Nominal)
(VPOS = 3.3V, IPOS = 80mA
r
5%) 1/
Parameter
Notes
Typical
Unit
Single-Ended Transimpedance (1GHz)
6500
3dB Transimpedance Bandwidth
2/ 3/
10
GHz
Low Frequency 3dB Cut-Off
4/
30
kHz
Transimpedance Ripple (1 to 8GHz)
2/ 3/
0.3
dBpp
Group Delay Variation (0.1 to 8GHz)
2/ 3/
15
ps
Ave Eq. Noise Current (0.1 to 8GHz)
2/ 3/
9
pA/
Hz
Output Return Loss (0.1 to F3dB)
2/ 3/
12
dB
Input Overload Current
1.7
mApp
Input Sensitivity (BER = 10
-12
)
-20
dBm
Single-Ended Limited Output Voltage
600
mVpp
Note: Table II Lists the RF Characteristics of typical devices as determined
by fixtured measurements.
1/
50
Single-Ended Output Impedance
2/
Photodiode Model: CPD = 0.2pF, RPD = 15
3/
RF Interconnect Inductance: 0.42nH
4/
External Bypass Capacitors Required (see assembly drawing)
TGA4815-EPU
TABLE III
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
o
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal
Resistance
(channel to backside of
carrier)
V
+
= 3.3 V
I
+
= 80 mA
Pdiss = 0.264 W
80
36.9
5.7 E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20
mil CuMo Carrier at 70
C baseplate temperature.
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
November 16, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Typical Fixtured Performance
TGA4815-EPU
0.65
0.70
0.75
0.80
0.85
0.90
0.95
0.0
0.2
0.4
0.6
0.8
1.0
RMS Photocurrent (mA)
RSSI Voltage (V)
56
59
62
65
68
71
74
77
80
1
3
5
7
9
11
13
15
Frequency (GHz)
Single-Ended Transimpedance
(dB
-
Ohm
)
-25 deg C
+ 0 deg C
+25 deg C
+50 deg C
+75 deg C
CPD = 0.2 pF
RPD = 15 Ohm
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
November 16, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Mechanical Drawing
TGA4815-EPU
PDF 
ZIP