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Электронный компонент: TGA4902-SM

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TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 15, 2005
1
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice.
-25
-20
-15
-10
-5
0
5
10
15
20
25
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
S-Par
a
m
e
ter
(d
B
)
Product Description
The TriQuint TGA4902-SM is a Ka-
Band packaged medium Power
Amplifier. The TGA4902-SM operates
from 25-35 GHz and is designed using
TriQuint's proven standard 0.25 um
power pHEMT production process.
The TGA4902-SM typically provides 25
dBm of output power at 1 dB gain
compression, with small signal gain of
18 dB.
The TGA4902-SM is ideally suited for
VSAT ground terminal market, Point-to-
Point Radio, Point-to-Multipoint
Communications.
Evaluation Boards are available.
Lead-free and RoHS compliant.
Primary Applications
Ka-Band VSAT
Point-to-Point Radio
Point-to-Multipoint Communications
Ka-Band
Packaged
MPA
TGA4902-SM
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 220 mA, Tuned
ORL
Gain
IRL
Key Features
Typical Frequency Range: 25 - 35 GHz
25 dBm Nominal P1dB
18 dB Nominal Gain
Bias 6 V, 220 mA
Package Dimensions:
4.0 x 4.0 x 0.9 mm
15
17
19
21
23
25
27
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
P
1dB
(
d
B
m
)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 15, 2005
2
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice.
TGA4902-SM
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Drain Voltage
8 V
2/
Vg
Gate Voltage Range
-5 TO 0 V
Id
Drain Current
296 mA
2/ 3/
Ig
Gate Current
8.8 mA
3/
P
IN
Input Continuous Wave Power
20 dBm
P
D
Power Dissipation
See note 4/
2/
T
CH
Operating Channel Temperature
150
0
C
5/ 6/
T
M
Mounting Temperature (30 Seconds)
260
0
C
T
STG
Storage Temperature
-65 to 150
0
C
T
CASE
Package Operating Temperature
-40 to 110
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed
P
D
.
3/
Total current for the entire MMIC.
4/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
P
D
(max) = (150
0
C T
BASE
0
C) / 60.71 (
0
C/W)
Where T
BASE
is the base plate temperature.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/
These ratings apply to each individual FET.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 15, 2005
3
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice.
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C, Nominal)
PARAMETER
TYPICAL
UNITS
Frequency Range
25 - 35
GHz
Drain Operating
6
V
Quiescent Current
220
mA
Small Signal Gain
18
dB
Input Return Loss
15
dB
Output Return Loss
10
dB
Output Power @ 1 dB Compression Gain
25
dBm
Temperature Coefficient
-0.017
dB/
0
C
TABLE III
THERMAL INFORMATION
PARAMETER
TEST
CONDITIONS
T
CH
(
O
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal Resistance
(channel case)
Vd = 6 V
I
D
= 220 mA
Pdiss = 1.32 W
150
60.71
1.0E+6
Note: Worst case condition with no RF applied, 100% of DC power is dissipated, Case
Temperature @ 70
O
C
TGA4902-SM
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 15, 2005
4
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice.
15
16
17
18
19
20
21
22
23
24
25
26
27
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
P1
d
B
(d
B
m
)
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id =220 mA, Tuned
0
2
4
6
8
10
12
14
16
18
20
22
24
26
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
Gain
(
d
B
)
TGA4902-SM
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 15, 2005
5
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice.
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id =220 mA
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
I
n
p
u
t R
e
tu
r
n
L
o
s
s
(d
B
)
Tuned
*
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
O
u
tput

R
e
tur
n
Los
s
(
d
B
)
Tuned
*
* As build performance without tuning stubs
TGA4902-SM