TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
1
6 - 17 GHz Dual-Channel Power Amplifier TGA6316-EEU
Key Features and Performance
6 to 17 GHz Frequency Range
Dual Channel Power Amplifier
20.5dB Typical Gain, Single Channel
1.5:1 Typical Input SWR, 2.1:1 Typical
Output SWR, Single Channel
29.5 dBm Output Power at 3 dB Gain
Compression, (31dBm combined)
6.5024 x 4.8006 x 0.1016 mm (0.256 x
0.189 x 0.004 in.)
Description
The TriQuint TGA6316-EEU is a dual channel GaAs monolithic amplifier which
operates from 6 to 17-GHz. Each channel features three-stage topology with a
1200-mm dual-gate FET distributed amplifier for the first stage, a 1200 m single
gate FET second stage, and a 1900 m single gate FET third stage. The dual-
channel construction is designed for off-chip combining.
A single channel of the TGA6316-EEU provides 20.5-dB typical small signal gain
and 29.5 dBm output power at 3 dB gain compression. The TGA6316-EEU amplifier
is designed for use in wideband systems such as electronic warfare,
expendable decoys and test equipment.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as the thermocompression and thermosonic wire
bonding processes. Ground is provided to the circuitry through vias to the backside
metallization.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
4
TYPICAL S-PARAMETERS
RF CHARACTERISTICS
TGA6316-EEU
T
A
= 25
o
C, V
D
= 8 V, V
G2
= 1.2 V, I
D
= 50% I
DSS
(single channel)
T
A
= 25
o
C, V
D
= 8 V, V
G2
= 1.2 V, I
D
= 50% I
DSS
(single channel)
P AR AM ETER
TEST C ONDITIONS
TYP
UNITS
G
P
Smalls ignal pow er gain
f =6 to 17 GHz
20.5
dB
SWR(in)
Input s tanding w ave ratio
f = 6 to 17 GHz
1.5:1
-
SWR(out) Output s tanding w ave ratio
f = 6 to 17 GHz
2.1:1
-
P
1dB
Output pow er at 1dB gain compres s ion
f = 6 to 17 GHz
28.5
P
2dB
Output pow er at 2dB gain compres s ion
f = 6 to 17 GHz
29
dBm
P
3dB
Output pow er at 3dB gain compres s ion
f = 6 to 17 GHz
29.5
F re quenc y
S
11
S
21
S
12
S
22
GAIN
(GHz)
M AG
ANG()
MAG
ANG()
MAG
ANG()
MAG
ANG()
(dB)
6.0
0.34
-162
11.98
25
0.004
13
0.32
-13
21.6
6.4
0.33
179
15.41
-60
0.001
146
0.43
-57
23.8
6.8
0.29
162
13.82
-131
0.001
136
0.50
-92
22.8
7.2
0.24
150
12.11
170
0.001
127
0.53
-122
21.7
7.6
0.19
138
10.41
122
0.001
126
0.51
-147
20.3
8.0
0.14
126
9.49
77
0.001
135
0.47
-171
19.5
8.4
0.08
117
8.74
37
0.001
136
0.41
171
18.8
8.8
0.02
143
8.54
-2
0.001
126
0.36
156
18.6
9.2
0.07
-126
8.64
-38
0.001
139
0.33
143
18.7
9.6
0.16
-140
9.24
-77
0.001
119
0.33
130
19.3
10.0
0.23
-161
9.89
-116
0.002
124
0.33
114
19.9
10.4
0.28
178
10.93
-158
0.002
81
0.34
97
20.8
10.8
0.29
157
11.42
158
0.002
85
0.34
79
21.2
11.2
0.27
136
11.58
114
0.000
30
0.35
61
21.3
11.6
0.23
122
11.23
71
0.001
23
0.35
41
21.0
12.0
0.19
112
11.05
29
0.001
-75
0.36
21
20.9
12.4
0.16
110
10.76
-12
0.001
-142
0.35
1
20.6
12.8
0.15
108
10.82
-54
0.001
-147
0.34
-20
20.7
13.2
0.14
107
10.48
-97
0.000
124
0.31
-37
20.4
13.6
0.16
107
10.21
-141
0.002
147
0.29
-51
20.2
14.0
0.16
99
9.47
177
0.001
157
0.28
-63
19.5
14.4
0.19
94
8.89
133
0.000
-121
0.28
-78
19.0
14.8
0.21
81
8.09
92
0.001
171
0.27
-91
18.2
15.2
0.22
63
7.56
51
0.000
-105
0.27
-104
17.6
15.6
0.20
43
7.09
11
0.001
-120
0.26
-118
17.0
16.0
0.16
24
7.06
-28
0.002
-142
0.25
-131
17.0
16.4
0.08
13
7.41
-69
0.001
-142
0.24
-144
17.4
16.8
0.04
97
8.52
-115
0.001
-115
0.21
-160
18.6
17.2
0.15
109
9.45
-174
0.001
-174
0.15
-177
19.5
17.6
0.26
78
9.15
121
0.000
-30
0.06
-179
19.2
18.0
0.27
43
7.29
58
0.000
-57
0.11
-84
17.3
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
5
TGA6316-EEU
Refer to TriQuint's Recommended Assembly Instructions for GaAs Products.
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