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TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
1
2 - 18 GHz Gain Block Amplifier TGA6345-EEU
Key Features and Performance
2 to 18 GHz Frequency Range
23 dB Typical Gain
1.6:1 Typical Input / Output SWR
22 dBm Typical Output Power at 1 dB
Gain Compression
6 dB Typical Noise Figure
4.140 x 3.175 x 0.102 mm (0.163 x 0.125
x 0.004 in.)
Description
The TriQuint TGA6345-EEU is a monolithic amplifier which operates over the 2 to
18 GHz Frequency range. This device consist of three cascaded distributed
amplifier sections. Typical small signal gain is 23 dB, which is adjustable by
using the control voltage, V
CTRL
. The TGA6345-EEU provides 22 dBm typical output
power at 1 dB gain compression.
The TGA6345-EEU is suitable for a variety of applications such as phased array
radar's and wide-band electronic warfare systems including jammers and
expendable decoys, and electronic counter measures. Bond pad and backside
metallization is gold plated for compatibility with eutectic alloy attachment methods
as well as the thermosonic wire bonding processes. Ground is provided to the
circuitry through vias to the backside metallization.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
2
TGA6345-EEU
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
3
TYPICAL S-PARAMETERS
TGA6345-EEU
Reference planes for S-parameter data include bond wires as specified in the "Recommended Bias Network".
The S-parameters are also available on floppy disk and the world wide web.
Fre quency
S
11
S
21
S
12
S
22
GAIN
(GHz)
M AG
ANG(
o
)
MAG
ANG(
o
)
M AG
ANG(
o
)
M AG
ANG(
o
)
(dB )
0.5
0.71
-45
0.39
75
0.000
-177
0.94
-74
-8.2
1.0
0.50
-67
8.52
-34
0.000
129
0.40
-137
18.6
2.0
0.35
-97
21.40
131
0.001
117
0.19
102
26.6
3.0
0.31
-131
14.81
18
0.001
106
0.14
149
23.4
4.0
0.27
-171
15.56
-72
0.001
96
0.08
143
23.8
5.0
0.21
147
15.66
-159
0.001
89
0.07
154
23.9
6.0
0.12
104
15.44
116
0.001
96
0.07
173
23.8
7.0
0.01
-11
14.74
34
0.001
120
0.11
-176
23.4
8.0
0.13
-156
13.81
-46
0.002
130
0.18
174
22.8
9.0
0.22
162
13.19
-123
0.001
121
0.22
154
22.4
10.0
0.25
115
13.11
162
0.001
123
0.21
132
22.4
11.0
0.24
66
14.26
85
0.001
168
0.17
126
23.1
12.0
0.22
12
15.70
2
0.002
-160
0.16
135
23.9
13.0
0.14
-44
16.07
-83
0.002
-169
0.23
135
24.1
14.0
0.07
-94
16.07
-170
0.002
-174
0.24
116
24.1
15.0
0.02
-46
16.00
103
0.003
-177
0.19
115
24.1
16.0
0.13
-12
16.30
8
0.001
-166
0.21
113
24.2
17.0
0.18
-61
14.18
-86
0.003
164
0.27
106
23.0
18.0
0.20
-116
12.09
-172
0.002
169
0.29
91
21.7
19.0
0.16
-160
13.16
92
0.003
3
0.37
39
22.4
20.0
0.20
-174
12.08
-6
0.005
-76
0.18
-51
21.6
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
4
RF CHARACTERISTICS
DC CHARACTERISTICS
TGA6345-EEU
P ARAMETER
TES T CONDITIONS
MIN TYP
M AX UNIT
I
DS S
Total zerogatevoltage
V
GS
= 0, V
DS 1
5.0
342 684 1026 mA
drain current at s aturation
V
GS
= 0, V
DS 2
4.0
V
GS
= 0, 0.5V to 3.5V
V+ = 7 V, V
CNTL
= 0 V, I+ = 50% I
DSS
, T
A
= 25
o
C
T
A
= 25
o
C
V
DS
for I
DSS
is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe
P AR AMETER
TES T C ONDITIONS
TYP
UNITS
G
P
Smalls ignal pow er gain
f = 2 to 18 GHz
23
dB
SWR
(in)
Input s tanding w ave ratio
f = 2 to 18 GHz
1.6:1
SWR
(out)
Output s tanding w ave ratio
f = 2 to 18 GHz
1.6:1
NF
Nois e Figure
f = 2 to 10 GHz
5.5
dB
f = 10 to 18 GHz
7.5
P
1dB
Output pow er at 1dB gain compres s ion
f = 2 to 18 GHz
22
dBm
f = 2 GHz
31.0
f = 6 GHz
33.0
IP
3
Output thirdorder intercept point
f = 9 GHz
32.5
dBm
f = 12 GHz
31.5
f = 18 GHz
32.5
fo = 2 GHz
37.0
Output s econdorder intercept point
fo = 4 GHz
40.0
dBm
fo = 6 GHz
40.5
fo = 9 GHz
46.5
fo = 2 GHz
-23.0
Output s econd harmonic at 1dB gain compres s ion fo = 4 GHz
-26.5
dBc
fo = 6 GHz
-23.5
fo = 9 GHz
-27.5
fo = 2 GHz
-34.5
Output third harmonic at 1dB gain compres s ion
fo = 4 GHz
-25.0
dBc
fo = 6 GHz
-23.5
Output fourth harmonic at 1dB gain compres s ion
fo = 2 GHz
-58
dBc
fo = 4 GHz
-47
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
5
TGA6345-EEU
Refer to TriQuint's Recommended Assembly Instructions for GaAs Products.
RF connections: Bond two 1-mil diameter, 25-mil-length gold bond wires at both RF Input and RF Output
for optimum RF performance.
Close placement of external components is essential to stability.
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