8035
TGA8035-SCC
Gain Block Amplifier
q
6 to 18
-GHz Frequency Range
q
13
-dB Typical Gain
q
2.2:1 Typical Input/Output SWR
q
12.5
-dBm Typical Output Power at 1 -dB Gain Compression
q
5
-dB Typical Noise Figure
q
2,4892 x 2,0574 x 0,1143 mm (0.098 x 0.081 x 0.0045 in.)
The TriQuint TGA8035 - SCC is a two - stage GaAs monolithic amplifier designed for use as
a broadband general-purpose gain block. T wo 300 - m gate - width FETs provide a 13- dB typical gain and
a 5- dB noise figure from 6 to 18- GHz. Typical output power at 1 - dB gain compression is 12.5 - dBm.
Shunt feedback is used around each active device to improve gain flatness and standing - wave ratio
(SWR). Ground is provided to the circuitry through vias to the backside metallization.
The TGA8035-SCC amplifier is suitable for a variety of broadband electronic warfare (EW) applications.
The combination of gain, power, and noise figure makes this device an exceptional post amplifier
following a low-noise amplifier.
Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment
methods as well as thermocompression and thermosonic wire- bonding processes. The TGA8035 - SCC
is supplied in chip form and is readily assembled using automated equipment.
PHOTO ENLARGEMENT
DESCRIPTION
T R I Q U I N T
S E M I C O N D U C T O R , I N C .
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGA8035-SCC
3
TYPICAL
RETURN LOSS
ABSOLUTE
MAXIMUM RATINGS
0
2
4
6
8
10
12
14
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Return Loss (dB)
Input
Output
V
D1
, V
D2
= 5 V
I
D1
= 50% I
DSS
I
D1
= 50% I
DSS
T
A
= 25
C
Drain supply voltage, V
D1
, V
D2
................................................................................................................
8 V
Drain supply voltage range with r espect to negative supply voltage, V
D1
- V
G1
, V
D2
- V
G2
....................
0 V to 8 V
G1
, V
G2
......................................................................................
0 V to - 5 V
.................................................................................................................. I
DSS1
Negative supply voltage range, V
Positive supply current, I
D1
Positive supply current, I
D2
.................................................................................................................. I
DSS2
Power dissipation at (or below) 25 C base-plate temperature, P
D
* ......................................................
1.4
W
Input continuous wave power, P
IN
....................................................................................................
20 dBm
Operating channel temperature, T
CH
** .............................................................................................. 150 C
Mounting temperature (30 sec), T
M
....................................................................................................
320 C
Storage temperature range, T
STG
............................................................................................
- 65 to 150 C
Ratings over operating channel temperature range, T
CH
(unless otherwise noted)
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for
extended periods may affect device reliability.
* For operation above 25 C base - plate temperature, derate linearly at the rate of 3 mW/ C.
* Operating channel temperatur e (T
CH
) directly affects the device MTTF. For maximum life, it is recommended
that channel temperature be maintained at the lowest possible level.
V
D1
, V
D2
= 5 V
I
D1
= 50% I
DSS1
I
D2
= 50% I
DSS2
T
A
= 25C
Input
Output
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGA8035-SCC
5
DC CHARACTERISTICS
RF CHARACTERISTICS
PARAMETER
TEST CONDITIONS
MIN
MA X
UNIT
I
DSS1
Total zerogatevoltage drain current at saturation
V
DS
= 0.5 V to 3.5 V,
36
108
mA
for FET1 *
V
GS
= 0
I
DSS2
Total zerogatevoltage drain current at saturation
V
DS
= 0.5 V to 3.5 V,
36
108
mA
for FET2 **
V
GS
= 0
PARAMETER
TEST CONDITIONS
T Y P
UNIT
G
P
Smallsignal power gain
f = 6 to 18 G Hz
13
dB
SWR(in)
Input standingwave ratio
f = 6 to 18 GHz
2.2:1
--
SWR(out)
Output standingwave ratio
f = 6 to 18 G Hz
2.2:1
--
P
1dB
Output power at 1dB gain compression
f = 6 to 18 G Hz
12.5
dBm
NF
Noise figure
f = 6 to 18 GHz
5
dB
T
A
= 25C
* V
DS1
for I
DSS1
is drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe.
** V
DS2
for I
DSS2
is drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe.
V
D1,
V
D2
= 5 V, V
G1
= - 1 V, V
G2
= - 1 V, T
A
= 25C
PARAMETER
TEST CONDITIONS
TEST CONDITIONS
F E T
MMIC*
UNIT
25C Base, 80C Channel**
152.5
76.3
R
JC
Thermal resistance,
I
D
=72 mA, V
D
=5V
85C Base, 151C Channel**
184.7
92.4
C/W
channeltobackside
100C Base, 169C Channel**
192.8
96.4
* MMIC thermal resistance is the peak FET temperature rise divided by the total MMIC dissipated power (.72 W).
** Hottest Gate Channel (Center of either FET).
EQUIVALENT
SCHEMATIC
V
G2
V
D1
FET
2
300 m
FET 1
300 m
V
D2
V
G1
RF Input
R F Output
THERMAL INFORMATION
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
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