TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
1
2 - 6 GHz Gain Block Amplifier TGA8226-SCC
Key Features and Performance
2 to 6 GHz Frequency Range
13.5 dB Gain
17 dBm Output Power at 1 dB Gain
Compression
5.5 dB Noise Figure
Operates from Single 15V Supply
1.47 x 1.85 x 0.15 mm (0.058 x 0.073 x
0.006 in.)
Description
The TriQuint TGA8226-SCC is a self biased distributed amplifier and operates from
a single 15 V supply. Four 457 um FETs produce a typical gain greater than 13.5
dB, with input and output SWRs less than 2:1. Direct cascading without additional
components is possible by using the on-chip blocking capacitors. Ground is
provided to the circuitry through vias to the backside metallization.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as thermocompression and thermosonic wire-
bonding processes. The TGA8226-SCC is available in chip form and is readily
assembled using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
3
TGA8226-SCC
TYPICAL
INPUT RETURN LOSS
TYPICAL
OUTPUT RETURN LOSS
ABSOLUTE
MAXIMUM
RATINGS
Positive supply voltage, V+....................................................................................... 18 V
Pow er dissipation, P
D
at (or below ) 25
o
C base-plate temperature *.................................... 4.4 W
Input continuous-w ave pow er, P
IN
..............................................................................23 dB
Operating Channel temperature, T
CH
**...........................................................................150
o
C
Mounting temperature (30 sec.), T
M
..............................................................................320
o
C
Storage temperature range, T
STG
.................................................................................-65 to 150
o
C
Ratings over operating channel temperature range, T
CH
(unless otherw ise noted).
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond
those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions
for extended periods may affect device reliability.
* For operation above 25
o
C base-plate temperature, derate linearly at the rate of 9.2 mW/
o
C.
** Operating channel temperature (T
CH
) directly affects the device MTTF. For maximum life, it is recommended
that channel temperature be maintained at the low est possible level.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
4
TGA8226-SCC
V+ = 15 V, T
A
= 25
o
C, DC-coupled bias and external DC blocks
TYPICAL S-PARAMETERS
Reference planes for S-parameter data include bond wires as specified in the "Recommended
Assembly Diagram". The S-parameters are also available on floppy disk and the world wide web.
Fre quency
S
11
S
21
S
12
S
22
GAIN
(GHz)
M AG
ANG()
MAG
ANG()
M AG
ANG()
M AG
ANG()
(dB )
0.5
0.15
7
2.70
21
0.000
30
0.21
153
8.6
1.0
0.15
-20
3.47
-6
0.001
104
0.20
125
10.8
1.5
0.14
-44
4.01
-27
0.001
124
0.21
100
12.1
2.0
0.14
-73
4.49
-49
0.002
124
0.20
80
13.1
2.5
0.13
-104
4.89
-72
0.004
119
0.20
62
13.8
3.0
0.13
-133
5.14
-95
0.006
110
0.20
48
14.2
3.5
0.14
-155
5.15
-118
0.009
88
0.20
34
14.2
4.0
0.16
-174
5.10
-139
0.008
64
0.19
22
14.2
4.5
0.18
169
5.07
-160
0.007
57
0.17
12
14.1
5.0
0.19
157
5.06
180
0.008
50
0.16
0
14.1
5.5
0.19
148
5.08
160
0.008
37
0.14
-12
14.1
6.0
0.20
140
5.13
140
0.008
21
0.12
-21
14.2
6.5
0.20
130
5.27
119
0.008
-5
0.10
-24
14.4
7.0
0.19
111
5.49
98
0.008
-33
0.08
-14
14.8
7.5
0.13
73
5.97
75
0.011
-68
0.09
-10
15.5
8.0
0.16
-38
6.73
46
0.017
-106
0.11
-24
16.6
8.5
0.50
-117
7.01
3
0.023
-154
0.13
-73
16.9
9.0
0.69
-168
5.07
-38
0.022
165
0.10
-128
14.1
9.5
0.69
162
3.37
-65
0.018
141
0.07
-160
10.6
10.0
0.65
144
2.38
-86
0.015
128
0.05
176
7.5
P AR AMETER
TEST CONDITIONS
TYP
UNIT
I
+
Pos itive s upply c urrent
V
+
= 15 V T
A
= 25C
68
mA
V+ = 15 V, T
A
= 25
o
C, DC-coupled bias and external DC blocks
T
A
= 25
o
C
RF CHARACTERISTICS
DC CHARACTERISTICS
P AR AMETER
TEST C ONDITIONS
TYP
UNIT
G
p
Smalls ignal pow er gain
f = 2 to 6 GHz 13.5
dB
SWR(in)
Input s tanding w ave ratio
f = 2 to 6 GHz 1.4:1
-
SWR(out) Output s tanding w ave ratio
f = 2 to 6 GHz 1.4:1
-
P
1dB
Output pow er at 1dB gain compres s ion f = 2 to 6 GHz
17
dBm
NF
Nois e figure
f = 2 to 6 GHz
5.5
dB
f = 2 GHz
26
IP
3
Output thirdorder intercept point
f = 4 GHz
28
dBm
f = 6 GHz
27
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