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8300
TGA8300 - SCC
Gain Block Amplifier
2 to 18- GHz Fr equency Range
20- dBm Typical Output Power at 1-dB Gain Compression
7.5- dB Typical Gain
Input/Output SWR 1.5:1
On - Chip Blocking Capacitor Allows Easy Cascading
q
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2,362 x 1,625 x 0,152 mm (0.093 x 0.064 x 0.006 in.)
The TriQuint TGA8300 - SCC is a GaAs monolithic distributed amplifier designed for use as a
multioctave general - purpose gain block. Four 189 - m gate width FETs provide 7.5 -dB nominal gain
and 5.5 - dB noise figur e from 2 to 18- GHz. Typical power output is 20 - dBm at 1 - dB gain compression.
Typical input and output SWRs ar e 1.5:1. Ground is provided to the circuitry through vias to the
backside metallization.
The TGA8300 - SCC is supplied in chip for m and is engineered for high - volume automated assembly .
All metal sur faces are gold plated to be compatible with ther mocompression and ther mosonic
wire- bonding processes.
PHOTO ENLARGEMENT
DESCRIPTION
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
T R I Q U I N T
S E M I C O N D U C T O R , I N C .
TGA8300
-SCC
2
TYPICAL
SMALL-SIGNAL
POWER GAIN
0
2
4
6
8
10
2
6
10
14
18
Frequency (GHz)
Gain (dB)
V
+
= 6 V
I
+
= 50% I
DSS
T
A
=25
C
TYPICAL
NOISE FIGURE
0
2
4
6
8
10
2
6
10
14
18
Frequency (GHz)
Noise Figure (dB)
V
+
= 6 V
I
+
= 50% I
DSS
T
A
=25
C
TYPICAL
OUTPUT POWER
P
1dB
0
5
10
15
20
25
2
6
10
14
18
Frequency (GHz)
Output Power (dBm)
V
+
= 6 V
I
+
= 50% I
DSS
T
A
=25
C
V
+
= 6 V
I
+
= 50% I
DSS
T
A
= 25C
V
+
= 6 V
I
+
= 50% I
DSS
T
A
= 25C
V
+
= 6 V
I
+
= 50% I
DSS
T
A
= 25C
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGA8300
-SCC
3
TYPICAL
RETURN LOSS
0
6
12
18
24
30
36
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Return Loss (dB)
Input
Output
V
+
= 6 V
I
+
= 50% I
DSS
T
A
=25
C
ABSOLUTE
MAXIMUM RATINGS
Positive supply voltage, V
+
.................................................................................................................... 8 V
Negative supply voltage range, V
.............................................................................................. 0 V to - 5 V
Power dissipation, P
D
at (or below) 25 C base-plate temperatur e* ...................................................... 1.8 W
Operating channel temperatur e, T
CH
** ......................................................... ..................................... 150 C
Mounting temperature (30 sec), T
M
....................................................................................................
320 C
Storage temperature range, T
STG
............................................................................................
- 65 to 150 C
Ratings over operating channel temperature range, T
CH
(unless otherwise noted)
Stresses beyond those listed under "Absolute Maximum Ratings" may cause per manent damage to the device.
These are stress ratings only, and functional operation of the device at these or any oth er conditions beyond
those indicated under "RF Characteristics " is not implied. Exposure to absolute maximum rated conditions for
extended periods may af fect device reliability.
* For operation above 25 C base-plate temperature, derate linearly at the rate of 3.8 mW/ C.
** Operating channel temperatur e directly affects the device MTTF . For maximum life, it is r ecommended that
channel temperature be maintained at the lowest possible level.
V
+
= 6 V
I
+
= 50% I
DSS
T
A
= 25C
Input
Output
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGA8300
-SCC
4
TYPICAL S - PARAMETERS
Frequency
S
11
S
21
S
12
S
22
GAIN
(GHz)
MA G
ANG ( )
MA G
ANG ( )
MA G
ANG ( )
MA G
ANG ( )
(dB)
1.0
0.40
4
2.32
-146
0.017
-163
0.52
-110
7.3
1.5
0.40
-151
2.00
167
0.015
97
0.32
-172
6.0
2.0
0.28
180
2.20
155
0.017
91
0.20
109
6.8
2.5
0.26
167
2.34
137
0.022
75
0.20
56
7.4
3.0
0.25
158
2.41
121
0.027
59
0.20
27
7.6
3.5
0.25
151
2.45
105
0.031
40
0.18
10
7.8
4.0
0.25
143
2.46
89
0.033
25
0.15
-2
7.8
4.5
0.25
137
2.45
74
0.037
12
0.11
-10
7.8
5.0
0.25
132
2.44
60
0.040
-3
0.08
-13
7.7
5.5
0.24
127
2.42
46
0.043
-17
0.06
-11
7.7
6.0
0.23
122
2.42
32
0.045
-31
0.06
-9
7.7
6.5
0.21
116
2.41
19
0.048
-45
0.06
-10
7.6
7.0
0.19
112
2.43
5
0.051
-58
0.06
-16
7.7
7.5
0.17
106
2.45
-8
0.054
-72
0.06
-30
7.8
8.0
0.14
101
2.45
-22
0.058
-86
0.04
-44
7.8
8.5
0.11
97
2.45
-36
0.062
V
+
= 6 V, I
+
= 50% I
DSS
, T
A
= 25C
Refer ence planes for S - parameter data include bond wires as specified in the "Recommended Assembly
Diagram."
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
10.5
9.0
9.5
10.0
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
0.08
0.05
0.05
0.05
0.07
0.09
0.11
0.14
0.17
0.20
0.23
0.25
0.25
0.23
0.20
0.17
0.12
0.09
0.15
0.22
0.30
0.28
0.21
0.03
0.03
0.05
0.07
0.08
0.10
0.11
0.13
0.14
0.14
0.13
0.12
0.10
0.09
0.10
0.13
0.17
0.21
0.23
0.23
0.19
0.12
0.11
0.19
2.46
2.47
2.46
2.45
2.44
2.42
2.43
2.46
2.44
2.49
2.51
2.54
2.54
2.51
2.47
2.46
2.44
2.39
2.40
2.44
2.53
2.64
2.62
7.8
7.8
7.8
7.8
7.8
7.7
7.7
7.7
7.8
7.9
8.0
8.1
8.1
8.0
7.9
7.8
7.7
7.6
7.6
7.7
8.1
8.4
8.4
7.7
95
105
130
148
146
134
117
97
76
58
42
27
15
6
-1
-3
2
32
60
59
44
21
-8
-50
-64
-78
-92
-106
-120
-134
-148
-162
-177
-168
-152
-136
-121
-105
-90
-74
-58
-42
-24
4
-19
-42
-100
-113
-126
-139
-152
-165
-177
171
159
147
135
121
106
91
77
61
46
-3
15
-0
-16
-36
-59
-80
-81
-143
174
148
126
105
82
60
38
17
-4
-32
-66
-110
-158
165
134
116
98
80
66
65
100
107
0.066
0.070
0.075
0.079
0.082
0.086
0.091
0.095
0.100
0.104
0.109
0.113
0.114
0.115
0.115
0.116
0.116
0.119
0.125
0.136
0.150
0.155
0.151
TGA8300
-SCC
5
DC CHARACTERISTICS
THERMAL INFORMATION
RF CHARACTERISTICS
PARAMETER
TEST CONDITIONS
MIN
MA X
UNIT
I
DSS
Total zerogatevoltage drain current
V
DS
= 0.5 V to 3.5 V, V
GS
= 0
130
300
mA
at saturation
PARAMETER
TEST CONDITIONS
T Y P
UNIT
G
P
Smallsignal power gain
f = 2 to 18 GHz
7.5
dB
SWR(in)
Input standing wave ratio
f = 2 to 18 GHz
1.5:1
-
SWR(out)
Output standing wave ratio
f
t
= 2 o 18 G Hz
1.4:1
-
P
1dB
Output power at 1dB gain compression
f = 2 to 18 G Hz
20
dBm
NF
Noise figure
f = 2 to 18 GHz
5.5
dB
f = 8 G Hz
32
IP
3
Output thirdorder intercept point
f = 12 G Hz
28
dBm
f = 18 G Hz
27
T
A
= 25C
V
DS
for I
DSS
is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autopr obe.
V
+
= 6 V, I
+
= 50% I
DSS
, T
A
= 25C
PARAMETER
TEST CONDITIONS
N O M
UNIT
R
JC
Thermal resistance, channeltobackside
V
+
= 6 V, I
+
= 50% I
DSS
45
C/W
EQUIVALENT
SCHEMATIC
RF
Output
RF
Input
189 m
FET 4
189 m
FET 3
FET 2
FET 1
V
-
V
+
189 m
189 m
RECOMMENDED TEST
CONFIGURA TION
DC Block
DUT
RF Input
RF Output
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
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