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Электронный компонент: TGA8310-SCC

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2 to 20- GHz Frequency Range
3.5- dB Noise Figur e Midband
1.4:1 Typical Input/Output SWR
17.5- dBm Output Power at 1- dB Gain Compr ession
9- dB Typical Gain
TGA8310-SCC
Low-Noise Amplifier
8310
q
q
q
q
q
q
4,115 x 2,362 x 0,102 mm (0.162 x 0.093 x 0.004 in.)
The TriQuint TGA8310 - SCC is a monolithic low - noise distributed amplifier, which operates
from 2 to 20- GHz. Noise figure is typically 4 - dB. Nine 122 - m gatewidth FETs typically provide
17.5- dBm of output power at 1 - dB gain compression and 9 - dB typical small signal gain. Typical input
return loss is 17- dB from 2 to 20 - GHz. Typical output return loss is 20- dB. Ground is provided to
the circuitry through vias to the backside metallization.
The TGA8310 - SCC low - noise distributed amplifier is suitable for a variety of wide - band electr onic
warfare systems such as radar warning receivers, electronic counter-measures, decoys, jammers, and
phased array systems.
Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment
methods as well as the ther mocompression and ther mosonic wir e - bonding processes. The
TGA8310 - SCC is supplied in chip form and is readily assembled using automated equipment.
PHOTO ENLARGEMENT
DESCRIPTION
T R I Q U I N T
S E M I C O N D U C T O R , I N C .
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com


TGA83
10-SCC
2
TYPICAL
SMALL-SIGNAL
POWER GAIN
0
2
4
6
8
10
12
14
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Gain (dB)
Vd = 5 V
V+ = 8 V
V
CTRL
= 1.5 V
I
+
= 60 mA
T
A
= 25
C
V
D
= 5V
V
+
= 8V
TYPICAL
NOISE FIGURE
y
g
0
1
2
3
4
5
6
7
8
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Noise Figure (dB)
Vd = 5 V
V+ = 8 V
V
CTRL
= 1.5 V
I
+
= 60 mA
T
A
= 25
C
V
d
= 5V
V
+
= 8V
TYPICAL
OUTPUT POWER
P
1dB
10
12
14
16
18
20
22
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Output Power (dBm)
Vd = 5 V
V+ = 8 V
V
CTRL
= 1.5 V
I
+
= 60 mA
T
A
= 25
C
V
d
= 5V
V
+
= 8V
V
CTRL
= 1.5 V
I
+
= 60 mA
T
A
= 25C
V
D
= 5 V
V
+
= 8 V
V
CTRL
= 1.5 V
I
+
= 60 mA
T
A
= 25C
V
D
= 5 V
V
+
= 8 V
V
CTRL
= 1.5 V
I
+
= 60 mA
T
A
= 25C
V
D
= 5 V
V
+
= 8 V
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com


TGA83
10-SCC
3
TYPICAL
INPUT RETURN LOSS
0
6
12
18
24
30
36
2
5
8
11
14
17
20
Frequency (GHz)
Input Return Loss (dB)
Vd = 5 V
V+ = 8 V
V
CTRL
= 1.5 V
I
+
= 60 mA
T
A
= 25C
TYPICAL
OUTPUT RETURN LOSS
0
6
12
18
24
30
36
42
2
5
8
11
14
17
20
Frequency (GHz)
Output Return Loss (dB)
Vd = 5 V
V+ = 8 V
V
CTRL
= 1.5 V
I
+
= 60 mA
T
A
= 25C
V
CTRL
= 1.5 V
I
+
= 60 mA
T
A
= 25C
V
D
= 5 V
V
+
= 8 V
V
CTRL
= 1.5 V
I
+
= 60 mA
T
A
= 25C
V
D
= 5 V
V
+
= 8 V
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com


TGA83
10-SCC
4
ABSOLUTE
MAXIMUM RATINGS
Drain supply voltage, V
D
........................................................................................................................
Positive supply voltage, V
+
..................................................................................................................
Positive supply voltage range with respect to negative supply voltage, V
+
- V
G1
..............................
Positive supply voltage range with respect to gain control voltage, V
CTR L
- V
+
..............................
Negative supply voltage range, V
G1
..............................................................................................
Gain control voltage range, V
CTRL
................................................................................................
Drain supply current, I
D
........................................................................................................................
Positive supply current, I
+
..............................................................................................................
Power dissipation, P
D
, at (or below) 25 C base-plate temperature* ......................................................
Input continuous wave power, P
IN
....................................................................................................
Operating channel temperature, T
CH
** ..............................................................................................
Mounting temperatur e (30 sec), T
M
....................................................................................................
Storage temperatur e range, T
STG
............................................................................................
9 V
12 V
0 V to 13 V
0 V to - 13 V
- 5 V to 0 V
- 5 V to 4 V
I
DSS
188 mA
2.6 W
23 dBm
150 C
320 C
- 65 to 150 C
Ratings over operating channel temperature range, T
CH
(unless otherwise noted)
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for
extended periods may af fect device reliability.
* For operation above 25 C base - plate temperature, derate linearly at the rate of 5.5 mW/ C.
** Operating channel temperatur e directly affects the device MTTF . For maximum life, it is recommended that
channel temperature be maintained at the lowest possible level.
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com


TGA8310-SCC
5
TYPICAL S -PARAMETERS
Frequency
S
11
S
21
S
12
S
22
GAIN
(GHz)
MAG
ANG()
MAG
ANG()
MAG
ANG()
MAG
ANG()
(dB)
2.0
0.31
-154
3.32
119
0.009
61
0.22
-19
10.4
2.5
0.26
-175
3.23
96
0.010
32
0.19
-62
10.2
3.0
0.21
169
3.13
75
0.011
14
0.17
-98
9.9
3.5
0.18
155
3.06
54
0.012
-6
0.16
-132
9.7
4.0
0.15
145
3.00
35
0.013
-23
0.14
-162
9.6
4.5
0.12
137
2.97
16
0.014
-42
0.12
169
9.4
5.0
0.10
134
2.93
-3
0.014
-59
0.10
143
9.3
5.5
0.08
135
2.93
-22
0.016
-76
0.07
116
9.3
6.0
0.07
143
2.92
-41
0.018
-96
0.04
87
9.3
6.5
0.07
153
2.93
-60
0.019
-115
0.02
44
9.3
7.0
0.08
162
2.94
-79
0.021
-133
0.02
-92
9.4
7.5
0.10
162
2.95
-99
0.022
-153
0.04
-143
9.4
8.0
0.12
157
2.91
-118
0.024
-170
0.05
-170
9.3
8.5
0.13
152
2.90
-138
0.025
173
0.05
164
9.2
9.0
0.14
145
2.85
-157
0.027
156
0.05
133
9.1
9.5
0.14
137
2.83
-176
0.028
140
0.05
95
9.1
10.0
0.14
127
2.80
165
0.029
123
0.05
52
8.9
10.5
0.14
116
2.77
146
0.029
109
0.06
17
8.8
11.0
0.12
109
2.80
127
0.032
89
0.07
-25
8.9
11.5
0.11
100
2.80
107
0.032
73
0.08
-54
9.0
12.0
0.08
99
2.80
88
0.033
56
0.08
-82
8.9
12.5
0.07
107
2.80
68
0.035
37
0.07
-109
8.9
13.0
0.06
128
2.79
48
0.035
18
0.05
-141
8.9
13.5
0.07
147
2.79
28
0.037
0
0.03
153
8.9
14.0
0.09
150
2.77
8
0.038
-21
0.04
53
8.8
14.5
0.11
144
2.74
-13
0.039
-41
0.08
13
8.7
15.0
0.12
130
2.73
-33
0.041
-58
0.12
-14
8.7
15.5
0.12
121
2.70
-54
0.044
-76
0.16
-42
8.6
16.0
0.13
112
2.65
-74
0.046
-96
0.18
-70
8.5
16.5
0.14
99
2.66
-94
0.049
-115
0.18
-99
8.5
17.0
0.12
87
2.70
-115
0.052
-134
0.16
-131
8.6
17.5
0.09
81
2.71
-138
0.056
-155
0.13
-166
8.7
18.0
0.08
95
2.61
-159
0.053
-175
0.08
145
8.3
18.5
0.07
79
2.68
-180
0.056
168
0.13
57
8.6
19.0
0.04
88
2.67
156
0.058
142
0.24
-25
8.5
19.5
0.04
92
2.65
133
0.054
119
0.37
-87
8.5
20.0
0.03
86
2.64
110
0.051
102
0.34
-149
8.4
T
A
= 25C, V
D
= 5 V, V
CTRL
= 1.5 V, I
+
= 60 mA
Reference planes for S - parameter data include bond wires as specified in the "Recommended Assembly
Diagram." The S - parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com