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DC to 14 -GHz Frequency Range
1.2:1 Input SWR, 1.3:1 Output SWR
11-dB Small Signal Gain
16-dBm Output Power at 1 -dB Gain Compression at Midband
3.1-dB Noise Figure at Midband
TGA8349-SCC
Gain Block Amplifier
8349
q
q
q
q
q
q
3,4290 x 2,2860 x 0,101 mm (0.135 x 0.090 x 0.004 in.)
The TriQuint TGA8349 -SCC is a GaAs monolithic low -noise distributed amplifier designed
for use as a multi -octave general-purpose gain block. Nine 122 -m gate width FETs provide 11-dB
nominal gain and 3.1- dB noise figure from DC to 14 -GHz. Typical power output is 16 -dBm at
1-dB gain compression. Typical input SWR is 1.2:1 and output SWR is 1.3:1. Gr ound is provided to
the circuitry through vias to the backside metallization.The DC to 14 -GHz frequency range, dual -gate
AGC control and gain-flatness characteristics make the TGA8349 -SCC suitable for many system
applications including fiber optic.
The TGA8349-SCC is supplied in chip for m and is engineer ed for high -volume automated assembly.
All metal sur faces are gold plated to be compatible with ther mocompression and ther mosonic
wire-bonding processes.
DESCRIPTION
PHOTO ENLARGEMENT
T R I Q U I N T
S E M I C O N D U C T O R , I N C .
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGA8349-SCC
2
TYPICAL
SMALL SIGNAL
POWER GAIN
0
4
8
12
16
20
0
2
4
6
8
10
12
14
Frequency (GHz)
Small-Signal Gain (dB)
V
+
= 8 V
V
CTR L
= 1.5 V
I
+
= 80 mA
T
A
= 25
C
TYPICAL
NOISE FIGURE
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
12
14
Frequency (GHz)
Noise Figure (dB)
V
+
= 8 V
V
CTR L
= 1.5 V
I
+
= 80 mA
T
A
= 25
C
TYPICAL
OUTPUT POWER
P
1dB
0
4
8
12
16
20
0
2
4
6
8
10
12
14
Frequency (GHz)
Output Power (dBm)
V
+
= 8 V
V
CTR L
= 1.5 V
I
+
= 80 mA
T
A
= 25
C
V
+
= 8 V
V
CTRL
= 1.5 V
I
+
= 80 mA
T
A
= 25C
V
+
= 8 V
V
CTRL
= 1.5 V
I
+
= 80 mA
T
A
= 25C
V
+
= 8 V
V
CTRL
= 1.5 V
I
+
= 80 mA
T
A
= 25C
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGA8349-SCC
3
ABSOLUTE
MAXIMUM RATINGS
Positive supply voltage, V
+
..................................................................................................................
13 V
Positive supply voltage range with respect to negative supply voltage, V
+
- V
..............................
0 V to 13 V
Positive supply voltage range with r espect to gain control voltage, V
CTRL
- V
+
..............................
0 V to - 13 V
Negative supply voltage range, V
G1
............................................................................................
- 5 V to 0 V
Gain control voltage range, V
CTRL
................................................................................................
- 5 V to 4 V
Positive supply cur rent, I
+
..............................................................................................................
144 mA
Power dissipation, P
D
, at (or below) 25C base-plate temperatur e* ......................................................
2.6 W
Input continuous wave power, P
IN
....................................................................................................
23 dBm
Operating channel temperature, T
CH
** ......................................................... ..................................... 150C
Mounting temperature (30 sec), T
M
..................................................................................................
320C
Storage temperature range, T
STG
............................................................................................
- 65 to 150C
Ratings over channel temperatur e range, T
CH
(unless otherwise noted)
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any oth er conditions beyond
those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for
extended periods may affect device reliability.
* For operation above 25C base -plate temperature, derate linearly at the rate of 5.5 mW/5C.
** Operating channel temperature directly af fects the device MTTF. For maximum life, it is r ecommended that
channel temperature be maintained at the lowest possible level.
TYPICAL
RETURN LOSS
0
10
20
30
40
50
0
2
4
6
8
10
12
14
Frequency (GHz)
Return Loss (dB)
Input
Output
V
+
= 8 V
V
CTR L
= 1.5 V
I
+
= 80 mA
T
A
= 25
C
V
+
= 8 V
V
CTRL
= 1.5 V
I
+
= 80 mA
T
A
= 25C
Input
Output
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGA8349-SCC
4
TYPICAL S-PARAMETERS
Frequency
S
11
S
21
S
12
S
22
GAIN
(GHz)
MAG
ANG()
MAG
ANG()
MAG
ANG()
MAG
ANG()
(dB)
0.1
0.02
115
3.32
173
0.001
85
0.12
180
10.4
0.5
0.02
92
3.34
155
0.003
73
0.12
161
10.5
1.0
0.02
26
3.36
130
0.005
53
0.11
142
10.5
1.5
0.03
-28
3.40
106
0.008
31
0.09
112
10.6
2.0
0.02
-72
3.46
80
0.011
6
0.05
80
10.8
2.5
0.02
-122
3.51
54
0.013
-20
0.02
21
10.9
3.0
0.01
-165
3.52
28
0.015
-46
0.03
-73
10.9
3.5
0.01
139
3.53
2
0.017
-71
0.05
-118
10.9
4.0
0.01
87
3.51
-24
0.019
-97
0.07
-151
10.9
4.5
0.01
12
3.48
-50
0.021
-121
0.07
-180
10.8
5.0
0.02
-74
3.48
-76
0.024
-146
0.06
155
10.8
5.5
0.03
-112
3.48
-101
0.026
-170
0.05
132
10.8
6.0
0.04
-142
3.49
-127
0.029
166
0.03
106
10.9
6.5
0.06
-167
3.52
-154
0.032
144
0.01
-123
10.9
7.0
0.05
167
3.51
180
0.035
120
0.04
-120
10.9
7.5
0.05
150
3.51
154
0.037
95
0.07
-139
10.9
8.0
0.04
141
3.51
127
0.039
71
0.10
-158
10.9
8.5
0.02
163
3.52
100
0.041
46
0.11
-177
10.9
9.0
0.03
-166
3.54
73
0.043
21
0.10
165
11.0
9.5
0.05
-162
3.58
46
0.045
-6
0.07
155
11.1
10.0
0.07
-167
3.63
18
0.047
-34
0.04
179
11.2
10.5
0.08
177
3.63
-11
0.049
-60
0.07
-142
11.2
11.0
0.09
167
3.68
-39
0.054
-89
0.12
-142
11.3
11.5
0.09
156
3.68
-69
0.057
-117
0.17
-160
11.3
12.0
0.08
149
3.68
-99
0.061
-144
0.18
-179
11.3
12.5
0.08
148
3.67
-129
0.066
-172
0.16
163
11.3
13.0
0.07
160
3.65
-160
0.069
160
0.11
156
11.3
13.5
0.09
174
3.63
168
0.072
131
0.09
-172
11.2
14.0
0.13
168
3.57
135
0.072
100
0.16
-156
11.0
14.5
0.16
151
3.46
101
0.072
68
0.23
-171
10.8
15.0
0.15
131
3.36
67
0.070
35
0.25
171
10.5
15.5
0.10
126
3.31
30
0.071
0
0.19
161
10.4
16.0
0.10
160
3.13
-10
0.069
-40
0.16
-171
9.9
V
+
= 8 V, V
CTRL
= 1.5 V, I
+
= 80 mA, T
A
= 25C
Reference planes for S -parameter data include bond wir es as specified in the "Recommended Assembly
Diagram."
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGA8349-SCC
5
RF CHARACTERISTICS
V
+
= 8 V, V
CTRL
= 1.5 V, I
+
= 80 mA T
A
= 25C (unless other wise noted)
* Unit dBc applies to decibels with r espect to the car rier or fundamental fr equency, f
o
.
PARAMETER
TEST CONDITIONS
TYP
UNIT
G
P
Smallsignal power gain
f = DC to 14 GHz
11
dB
SWR(in)
Input standing wave ratio
f = DC to 14 GHz
1.2:1
-
SWR(out)
Output standing wave ratio
f = DC to 14 GHz
1.3:1
-
P
1dB
Output power at 1dB gain compression
f = 7 GHz
16
dBm
NF
Noise figure
f = 7 GHz
3.1
dB
f
o
= 1 GHz
-51
Output third harmonic at Pin = -2 dBm
f
o
= 3 GHz
-47
dBc*
f
o
= 5 GHz
-48
f
o
= 1 GHz
-26
Output second harmonic at Pin = -2 dBm
f
o
= 3 GHz
-27
dBc*
f
o
= 5 GHz
-28
DC CHARACTERISTICS
THERMAL DATA
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
I
DSS
Total zerogatevoltage drain current at saturation
V
DS
= 0.5 V to 3.5 V,
131
395
mA
V
GS
= 0 V
T
A
= 25C
V
DS
for I
DSS
is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autopr obe.
PARAMETER
TEST CONDITIONS
FET
MMIC
UNIT
R
jC
Thermal resistance,
V+ = 8 V
V
DS(FET)
= 6.18 V, I
D(FET)
= 5 mA, channel = 79.6 C 311.4
34.6
channeltobackside Base = 70C V
DS(FET)
= 5.08 V, I
D(FET)
= 8 mA, channel = 82.8 C 314.0
35.0
C/W
V
DS(FET)
= 4.36 V, I
D(FET)
=10 mA, channel = 83.8 C 315.7
35.2
MMIC mounted with 38 m AuSn solder to car rier.
I
D (MMIC)
= 9 x I
D (FET)
.
PARAMETER
TEST CONDITIONS
R
(RES)
UNIT
R
(RES)
Thermal resistance of drain
V
RES
=1.70 V, I
D(MMIC)
=45 mA, Base =70 C, R
jC
= 89.5C/W
76.8 C/W
termination resistor, 37.7
V
RES
=2.71 V, I
D(MMIC)
=72 mA, Base =70 C, R
jC
= 89.7C/W
87.5
V
RES
=3.39 V, I
D(MMIC)
=90 mA, Base =70 C, R
jC
= 90.2C/W
97.5
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
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