TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
April 1, 2003
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Ku Band 4W Packaged Amplifier TGA8659-EPU-FL
Ceramic Flange Mounted Package
Key Features
0.5 um pHEMT Technology
>25 dB Nominal Gain
>36 dBm Nominal Psat
Frequency Range: 13 - 15 GHz
Bias 7V @ 1.3A Idq
Package Dimensions: 8.4 x 17.8 x 3.0 mm
3
(0.3 x 0.7 x 0.1 in
3
)
Primary Applications
Ku-Band VSAT Transmit
Point-to-Point Radio
Fixtured Measured Performance
Bias Conditions: Vd = 7V, Idq = 1.3A 5 %
Frequency at 14.5 GHz
25
27
29
31
33
35
37
3
4
5
6
7
8
9
10
11
12 13 14 15 16
Pin (dBm)
P
out (dBm)
Bias Conditions: Vd = 7V, Idq = 1.3A 5%
-10
-5
0
5
10
15
20
25
30
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
Gain
(
d
B
)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
April 1, 2003
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA8659-EPU-FL
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
o
C 5
o
C)
TABLE I
MAXIMUM RATINGS 1/
Symbol
Parameter
Value
Notes
V
+
Positive Supply Voltage
8V
I
+
Positive Supply Current (Quiescent)
1.7 A
2/
P
D
Power Dissipation
TBD
P
IN
Input Continuous Wave Power
24 dBm
T
CH
Operating Channel Temperature
150
C
3/, 4/
T
M
Mounting Temperature (30 seconds)
320
C
T
STG
Storage Temperature
-65
C to 150 C
1/ These values represent the maximum operable values of this device
2/ Total current for the entire MMIC
3/ These ratings apply to each individual FET
4/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
Parameter
Units
Typical
Drain Operating Voltage
V
7
Quiescent Current
A
1.3
Small Signal Gain
dB
25
Gain Flatness (Freq = 13.5 - 15 GHz)
dB/100MHz
0.1
Input Return Loss (Linear Small Signal)
dB
10
Output Return Loss (Linear Small Signal)
dB
10
Reverse Isolation
dB
> 50
CW Output Power @Psat at 14.5GHz
dBm
36
TOI at 14.5 GHz with Pout/tone of 28 dBm
dBm
41
Power Added Efficiency@Psat
%
30
P1dB temperature coeff. TC (-40 to +70 C) dB/deg C
0.01
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
April 1, 2003
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Measured Fixtured Data
Bias Conditions: Vd = 7V, Idq = 1.3A 5 %
Frequency at 14.5 GHz
25
27
29
31
33
35
37
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin (dBm)
Pout (dBm)
Bias Conditions: Vd = 7V, Idq = 1.3A 5%
-10
-5
0
5
10
15
20
25
30
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
G
a
in (
d
B)
TGA8659-EPU-FL
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
April 1, 2003
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Measured Fixtured Data
Bias Conditions: Vd = 7V, Idq = 1.3A 5%
-35
-30
-25
-20
-15
-10
-5
0
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
Input Return Loss (dB)
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
Output Return Loss (dB)
TGA8659-EPU-FL
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
April 1, 2003
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Measured Fixtured Data
Bias Conditions: Vd = 7V, Idq = 1.3A 5%
20
22
24
26
28
30
32
34
36
38
40
11
12
13
14
15
16
17
18
19
Frequency (GHz)
P2dB (
d
Bm)
10
15
20
25
30
35
40
45
50
55
60
PAE@P2dB (
%
)
P2dB
PAE
30
33
36
39
42
45
48
10
13
16
19
22
25
28
31
34
Fundamental output power per tone (dBm)
TO
I
(
d
B
m
)
Bias Conditions: Vd = 6V, Idq = 1.3A
5%
Frequency @ 14.5 GHz
TGA8659-EPU-FL
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