9083
TGA9083-EEU
Power Amplifier
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6.5 to 11.5 - GHz Frequency Range
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5-Watt Output Power at 7V , 6-W at 8V, 8-W at 9 Volt Drain Bias
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19-dB Typical Small Signal Gain
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40% Power Added Efficiency at 7V, 35% PAE at 9 Volt Drain Bias
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12-dB Typical Input Return Loss, 9- dB Typical Output Return Loss
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On-Chip Active Gate Bias Circuit Option Simplifies Biasing
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4, 521 x 3,048 x 0,100 mm (0.178 x 0.120 x 0.004 in.)
The TriQuint TGA9083 - EEU is a monolithic pow er amplifier which operates from 6.5 to
11.5 GHz. This device is currently classified as an Engineering Evaluation Unit. This t wo stage power
amplifier partially consists of a 2.5 -mm pHEMT driving a 11.36 -mm pHEMT at the output. The
TGA9083-EEU is capable of pro viding 8 Watts of output power with 35% PAE when biased at 9 Volts.
Typical 7 Volts operation provides 5 Watts of output power with a power-added efficiency of 40
percent. Typical small signal gain is 1 9-dB. In balanced configuration, 12 Watts of output power is
achievable with 40 % PAE.
The TGA9083-EEU is fabricated using TI's 0.25um T-gate power pHEMT process. This device offer s
either standard gate biasing or an on-chip active gate bias circuit which simplifies gate biasing . The
active gate bias (AGB) circuit requires a - 5 V supply. This amplifier's output pow er and high efficiency
over 6.5 to 11.5 GHz mak e it a viable pow er amp solution in applications such as point-to-point radio ,
phased-array radar, and telecommunications.
Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachment
methods as well as with ther mocompression and thermosonic wire - bonding processes.
The TGA9083 - EEU is supplied in chip for m and is readily assembled using automated equipment.
Ground is provided to the circuitr y through vias to the backside metallization.
PHOTO ENLARGEMENT
DESCRIPTION
O R , I N C .
T R I Q U I N T
S E M I C O N D U C T
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGA9083-EEU
4
ABSOLUTE
MAXIMUM RATINGS
Drain supply voltage, V
D
......................................................................................................................
10 V
Negative supply voltage range, V
G
..............................................................................................
- 5 V to 0 V
Drain supply current, I
D
................................................................................................................
3.5 A
Power dissipation, P
D
, at (or below) 25 C base-plate temperature* ........................................................
39 W
Input continuous wave power, P
IN
..................................................................................................
25.5 dBm
Operating channel temperature, T
CH
** ......................................................... .....................................
150 C
Mounting temperature (30 sec), T
M
..................................................................................................
320 C
Storage temperature range, T
STG
............................................................................................
- 65 to 150 C
Ratings over operating channel temperature range, T
CH
(unless otherwise noted)
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the de vice.
These are stress ratings only, and functional operation of the de vice at these or an y other conditions beyond
those indicated under "RF Characteristics" is not implied. E xposure to absolute maximum rated conditions for
extended periods may affect device reliability.
* For operation above 25 C base - plate temperature, derate linearly at the rate of 73 mW/ C.
** Operating channel temperature directly affects the de vice MTTF. For maximum life, it is recommended that
channel temperature be maintained at the low est possible level.
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com