www.docs.chipfind.ru
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 5804 Web: www.triquint.com
Advance Product Information
1
6 - 18 GHz High Power Amplifier TGA9092-EPU
Key Features and Performance
Dual Channel Power Amplifier
0.25um pHEMT Technology
6-18 GHz Frequency Range
2.8 W/Channel Midband Pout
5.6 W Pout Combined
25 dB Nominal Gain
Balanced In/Out for Low VSWR
8V @ 1.2A per Channel Bias
Primary Applications
X-Ku band Power
Point-to-Point Radio
VSAT
Chip Dimensions 4.32mm x 5.64mm x 0.100mm
Typical Measured Small Signal Gain
Typical Measured Pout (RF Probe)
TGA9092-EPU Average Pout
RF Probe Data
20.00
22.00
24.00
26.00
28.00
30.00
32.00
34.00
36.00
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Pout (dBm)
TGA9092-EPU Measured S21 Data
10.00
12.00
14.00
16.00
18.00
20.00
22.00
24.00
26.00
28.00
30.00
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
Gain (dB)
Mean
+1std
-1std
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 5804 Web: www.triquint.com
Advance Product Information
Table I
RECOMMENDED MAXIMUM RATINGS
Symbol
Parameter
Value
Notes
V
+
Positive Supply Voltage
9 V
I
+
Positive Supply Current
3.5 A
3/
P
D
Power Dissipation
25 Watts
P
IN
Input Continuous Wave Power
25 dBm
T
CH
Operating Channel Temperature
150
C
1/, 2/
T
M
Mounting Temperature (30 seconds)
320
C
T
STG
Storage Temperature
-65
C to 150
C
1/
These ratings apply to each individual FET
2/
Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/
Total current for both channels
Table II
DC PROBE TESTS
(T
A
= 25
C
5
C)
Symbol
Parameter
Minimum Maximum
Value
V
P1-14
Pinch-off Voltage
-1.5
-0.5
V
BV
GS1
Breakdown Voltage gate-source
-30
-8
V
BV
GD1-3
Breakdown Voltage gate-drain
-30
-8
V
Table III
ON-WAFER RF PROBE CHARACTERISTICS
(T
A
= 25
C
5
C)
Symbol Parameter
Test Condition
Vd=8V, Id=800mA
Limit
Min Nom Max
Units
G
p
Small-signal
Power Gain
F = 6 to 18 GHz
21
25
31
dB
P
3dB
Output Power
@ 3dB gain
compression
F = 6 to 9 GHz
F = 10 to 17 GHz
F = 18 Ghz
30
33
30
32
34
33
-
-
-
dBm
PAE
Power Added
Efficiency
F = 6 to 18 GHz
12
25
-
%
Note: RF probe data taken at 1GHz steps
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 5804 Web: www.triquint.com
Advance Product Information
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 5804 Web: www.triquint.com
Advance Product Information
Chip Assembly and Bonding Diagram
Reflow process assembly notes:
AuSn (80/20) solder with limited exposure to temperatures at or above 300
C
alloy station or conveyor furnace with reducing atmosphere
no fluxes should be utilized
coefficient of thermal expansion matching is critical for long-term reliability
storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
vacuum pencils and/or vacuum collets preferred method of pick up
avoidance of air bridges during placement
force impact critical during auto placement
organic attachment can be used in low-power applications
curing should be done in a convection oven; proper exhaust is a safety concern
microwave or radiant curing should not be used because of differential heating
coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
thermosonic ball bonding is the preferred interconnect technique
force, time, and ultrasonics are critical parameters
aluminum wire should not be used
discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
maximum stage temperature: 200
C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
PDF 
ZIP