TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGB2001-EPU
Lange Coupler Set
TGB4001-EPU
TGB4002-EPU
Key Features and Performance
Very Low Loss (<0.25dB Typical)
High Power 1W 50
W Termination
Broadband 3dB Power Split
Chip dimensions: 1.0 x 3.0 x 0.1 mm
(40 x 120 x 4 mils)
3 sizes Cover 12GHz - 45GHz
Preliminary Measured Data
Primary Applications
Power Combining
TGB2001
12-21GHz
TGB4001
18-32GHz
TGB4002
27-45GHz
TGB2001
-5
-4
-3
-2
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Frequency (GHz)
S21 (dB)
Direct
Coupled
TGB2001 Back-to-Back
-1.50
-1.25
-1.00
-0.75
-0.50
-0.25
0.00
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Frequency (GHz)
S21 (dB)
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
P
IN
Input Continuous Wave Power
TBD dBm
T
M
Mounting Temperature
(30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/ These ratings represent the maximum operable values for this device.
TGB2001-EPU
TGB4001-EPU
TGB4002-EPU
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Typical Fixtured Performance
TGB2001-EPU
TGB4001-EPU
TGB4002-EPU
TGB2001 Back-to-Back
-1.50
-1.25
-1.00
-0.75
-0.50
-0.25
0.00
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Frequency (GHz)
S21 (dB)
TGB2001
-5
-4.5
-4
-3.5
-3
-2.5
-2
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Frequency (GHz)
S21 (dB)
Direct
Coupled
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Mechanical Drawing
TGB2001-EPU
TGB2001-EPU
TGB4001-EPU
TGB4002-EPU
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Mechanical Drawing
TGB4001-EPU
TGB2001-EPU
TGB4001-EPU
TGB4002-EPU
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Mechanical Drawing
TGB4002-EPU
TGB2001-EPU
TGB4001-EPU
TGB4002-EPU
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGB2001-EPU
TGB4001-EPU
TGB4002-EPU
Assembly Process Notes
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C.
(30 seconds maximum)
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200C.
PDF 
ZIP