TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
1
Single-Balanced Down Converter TGC1430E
Key Features and Performance
0.25um pHEMT Technology
20-40 GHz RF/LO Range
DC -1GHz IF
-8 dB conversion Gain at 500MHz IF
+15dBm LO drive
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Communications
Chip Dimensions 1.26 mm x 1.19 mm
Conversion Gain vs IF Frequency
Conversion Gain vs LO Drive
0
5
10
15
20
25
30
35
40
45
50
2
6
10
14
18
22
26
30
34
38
42
46
50
Frequency (GHz)
Iso
l
a
t
i
o
n
(d
B
)
R2I
L2I
LO Drive Level = +15dBm
RF Drive Level = -15dBm
RF and LO to IF Isolation
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
18
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
LO
R
e
t
u
r
n
Lo
s
s
(d
B)
12.5
15
17.5
Drive Level (dBm):
LO Return Loss
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TGC1430E - Recommended Assembly Drawing
TGC1430E
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGC1430E
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