Advance Product Information
June 29, 2004
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
20 - 40 GHz X3 Frequency Multiplier TGC1430G-EPU
Key Features and Performance
0.25um pHEMT Technology
20 - 40 GHz Output Frequencies
8.5 - 13.5 GHz Fundamental Frequencies
-15 +/- 2dB Conversion Gain
18 dBm Input Drive Optimum
15dB Fundamental Isolation
30dB 2nd Harmonic Isolation
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Communications
Chip Dimensions 1.50 mm x 2.0 mm
Conversion Gain vs Input Frequency (Input @ 18dBm)
Fundamental Isolation
2nd Harmonic Suppression
-35
-30
-25
-20
-15
-10
-5
0
6
8
10
12
14
Input Frequency (GHz)
Conve
rsion G
a
in (dB)
+18dBm
-35
-30
-25
-20
-15
-10
-5
0
6
8
10
12
14
Input Frequency (GHz)
Is
o
l
a
tio
n
(d
B
)
+18dBm
-70
-60
-50
-40
-30
-20
-10
0
6
8
10
12
14
Input Frequency (GHz)
2nd Har
m
oni
c Suppr
essi
on (
d
B)
Advance Product Information
June 29, 2004
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
2
TGC1430G-EPU
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
1
2
.00 [0.0
00]
1.
30 [
0
.0
51
]
1.
26 [
0
.0
49
]
1.
49 [
0
.0
59
]
.00 [0.000]
1.87 [0.073]
.12 [0.005]
1.99 [0.078]
Units: millimeters [inches]
Thickness: 0.10 [0.004] (reference only)
Chip edge to bond pad dimensions are shown to center of bond pads.
Chip size tolerance: 0.05 [0.002]
RF ground through backside
Bond Pad #1
Bond Pad #2
RF Input
RF Output
0.10 x 0.20
0.10 x 0.20
[0.004 x 0.008]
[0.004 x 0.008]
Advance Product Information
June 29, 2004
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
Recommended Assembly Drawing
TGC1430G-EPU
Attach 2 TFNs and MMIC to carrier plate as
shown using conductive epoxy.
Bond 4 wieres as shown using minimum length.
RFout
RFin
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Advance Product Information
June 29, 2004
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
4
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGC1430G-EPU
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
0
C (30 seconds max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200
0
C.
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