TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
1
20 - 40 GHz IQ Mixer TGC1430H
Key Features and Performance
0.25um pHEMT Technology
20 - 40 GHz RF/LO Frequencies
DC - 1GHz IF
-11 +/- 1dB Conversion Gain
15 dBm Input Drive
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Communications
Image Reject Mixers
Chip Dimensions 1.50 mm x 2.0 mm
Conversion Gain vs IF Frequency
(LO Input @ +15dBm)
In-Phase IF Port
-30
-25
-20
-15
-10
-5
0
18
20
22
24
26
28
30
32
34
36
38
40
LO Frequency (GHz)
Conve
r
s
i
on G
a
i
n
(
d
B)
+100MHz
-100MHz
+250MHz
-250MHz
+500MHz
-500MHz
+750MHz
-750MHz
+1GHz
-1GHz
-30
-25
-20
-15
-10
-5
0
18
20
22
24
26
28
30
32
34
36
38
40
LO Frequency (GHz)
Conve
r
s
i
on G
a
i
n
(
d
B)
+100MHz
-100MHz
+250MHz
-250MHz
+500MHz
-500MHz
+750MHz
-750MHz
+1GHz
-1GHz
Conversion Gain vs IF Frequency
(LO Input @ +15dBm)
Quadrature IF Port
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TGC1430G - Recommended Assembly Drawing
TGC1430H
RF
LO
IF
IF
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGC1430H
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