TGC1452-EPU Datasheet PDF
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
1
0.2 - 18 GHz Downconverter TGC1452-EPU
Key Features and Performance
0.25um pHEMT Technology
0.2-18 GHz RF/LO Frequency Range
DC-4 GHz IF Frequency Range
Nominal Conversion Gain of 12 dB
Bias 3-5V @ 17-24 mA
Chip Dimensions 1.0 mm x 1.0 mm
Primary Applications
Satellite Systems
Point-to-Point Radio
The TriQuint TGC1452-EPU is a double balanced
MMIC mixer design using TriQuint's proven 0.25 um
Power pHEMT process to support a variety of
communication system applications including satellite.
The double balanced design consists of an integrated
Gilbert cell mixer core, RF/LO baluns, differential
combiner, and output driver amplifier. The TGC1452
may be operated from a single +3 V to +5 V power
supply with typical current draw of 24 mA. The LO
power requirement is -5 dBm to 0 dBm. The TGC1452
may also be operated as an up-converter.
The TGC1452 requires a minimum of off-chip
components employing only a 0.01 uF off-chip bypass
capacitor for the power supply line. No additional off-
chip RF matching components are required. Each
device is 100% RF tested on-wafer to ensure
performance compliance. The device is available in
chip form.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
RF
IN
LO
IN
IF
OUT
LSB, IF = 501MHz, 0dBm LO
-40
-30
-20
-10
0
10
20
0
2
4
6
8
10
12
14
16
18
RF Frequency (GHz)
Ga
in a
nd Is
ola
t
ion (
d
B
)
+5V-24mA
+3V-17mA
Conversion Gain
LO-IF Isolation
LSB, RF = 4001MHz, 0dBm LO
-4
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IF Frequency (GHz)
Co
n
versi
o
n
Gai
n
(d
B)
+5V-24mA
+3V-17mA
January 3, 2001
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
2
RECOMMENDED MAXIMUM RATINGS
Symbol
Parameter
Value
Notes
V
+
Positive Supply Voltage
8 V
I
+
Positive Supply Current
80 mA
3/
P
D
Power Dissipation
0.64 W
P
IN
Input Continuous Wave Power
14 dBm
T
CH
Operating Channel Temperature
150
C
1/, 2/
T
M
Mounting Temperature (30 seconds)
320
C
T
STG
Storage Temperature
-65
C to 150 C
1/
These ratings apply to each individual FET
2/
Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/
Total current for the entire MMIC
Electrical Characteristics
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
ON-WAFER RF PROBE CHARACTERISTICS
(T
A
= 25
C 5C)
Symbol Parameter
Test Condition
Vd=5V, LO=-5dBm
Limit
Min Nom Max
Units
G
Conversion
Gain
F
RF
= 2.0 GHz
F
LO
= 2.501 GHz
10
15
-
dB
dB
ILO
LO Isolation
F
LO
= 2.501 GHz
-
-30
-25
dB
IDC
DC Current
20
25
35
mA
RF-Probe Performance Summary
,
,
,
0
100
200
300
400
500
600
-45 -42 -39 -36 -33 -30 -27 -24 -21 -18 -15
LO to IF Isolation (dB)
Nu
mb
er o
f
Devi
ces
0
200
400
600
800
1000
1200
13.0
13.8
14.6
15.4
16.2
17.0
Conversion Gain (dB)
N
u
mber of
D
e
vi
ces
TGC1452-EPU
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Typical Performance
Measured
+5V Measured
+3V Measured
Parameter
Units 2GHz 10GHz 18GHz 2GHz 10GHz 18GHz
Conversion Gain
1
dB
14.8
9.5
5.5
12.0
7.5
2.5
Output P
1dB
1
dBm
-2.0
-2.3
-3.7
-7.5
-8.5
-10.0
SSB Noise Figure
2
dB
9.8
12.5
18.5
10.2
13.0
19.0
Gain Temp. Coeff.
1
dB/
0.017
0.020
0.030
0.015
0.023
0.032
LO Isolation
dB
-30
-35
-28
-35
-35
-28
RF Return Loss
dB
-18
-9
-8
-18
-9
-8
IF Return Loss
dB
-12
-16
-18
-16
-21
-24
LO Return Loss
dB
-20
-10
-7
-19
-10
-7
Supply Current
mA
24
17
1. IF = 501 MHz
2. IF = 201 MHz
Mechanical Characteristics
0.000
1.000
0.000
1.000
0.590
0.955
0.545
0.637
1
2
4
3
Units: millimeters
Thickness: 0.1016 (Ref. Only)
Chip Size Tolerance: +/- 0.0508
Bond Pad 1 (RF Input)
0.150x0.100
Bond Pad 2 (VD)
0.100x0.100
Bond Pad 3 (RF Output)
0.150x0.100
Bond Pad 4 (LO Input)
0.150x0.100
TGC1452-EPU
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
4
Chip Assembly and Bonding Diagram
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
RF
Input
RF
Output
LO
Input
0.01
=
=
=
=F
VD
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