TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
1
Discrete MESFET TGF1350-SCC
Key Features and Performance
0.5 um x 300 um FET
1.5 dB Noise Figure with 11dB
Associated Gain at 10 GHz
2.5 dB Noise Figure with 7 dB
Associated Gain at 18 GHz
All-gold Metallization for High Reliability
Recessed Gate Structure
Description
The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used
for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility
with thermocompression and thermosonic compatibility wire-bonding processes.
The TGF1350-SCC is readily assembled using automated equipment. Die attach
should be accomplished with conductive epoxy only. Eutectic attach is not
recommended .
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
2
TGF1350-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
3
Frequency S
11
S
21
S
12
S
22
(GHz)
MAG
ANG ()
MAG
ANG ()
MAG
ANG ()
MAG
ANG ()
2 .0
0 .9 8
- 2 8
3 .2 2
1 5 7
0 .0 3
7 5
0 .7 1
- 1 2
2 .5
0 .9 6
- 3 6
3 .1 7
1 5 1
0 .0 4
7 1
0 .7 1
- 1 4
3 .0
0 .9 3
- 4 4
3 .0 7
1 4 6
0 .0 4
6 8
0 .7 1
- 1 4
3 .5
0 .9 3
- 5 1
2 .9 9
1 4 1
0 .0 5
6 5
0 .6 9
- 1 6
4 .0
0 .9 0
- 5 6
2 .8 8
1 3 7
0 .0 5
6 2
0 .6 8
- 1 7
4 .5
0 .8 9
- 6 0
2 .7 8
1 3 3
0 .0 5
6 1
0 .6 8
- 1 9
5 .0
0 .8 8
- 6 4
2 .7 3
1 2 9
0 .0 6
6 0
0 .6 7
- 2 4
5 .5
0 .8 7
- 6 7
2 .6 5
1 2 5
0 .0 6
5 8
0 .6 6
- 2 8
6 .0
0 .8 5
- 7 0
2 .5 5
1 2 1
0 .0 6
5 6
0 .6 6
- 3 0
6 .5
0 .8 3
- 7 4
2 .4 6
1 1 8
0 .0 6
5 5
0 .6 6
- 3 1
7 .0
0 .8 2
- 7 7
2 .3 6
1 1 6
0 .0 6
5 4
0 .6 6
- 3 2
7 .5
0 .8 2
- 8 0
2 .2 8
1 1 3
0 .0 6
5 4
0 .6 6
- 3 2
8 .0
0 .8 1
- 8 2
2 .2 2
1 1 0
0 .0 6
5 3
0 .6 6
- 3 3
8 .5
0 .8 1
- 8 5
2 .1 5
1 0 7
0 .0 6
5 2
0 .6 5
- 3 4
9 .0
0 .8 0
- 8 8
2 .1 2
1 0 4
0 .0 6
5 1
0 .6 5
- 3 8
9 .5
0 .7 9
- 9 2
2 .0 8
1 0 1
0 .0 6
5 1
0 .6 5
- 4 0
1 0 .0
0 .7 8
- 9 6
2 .0 5
9 8
0 .0 6
5 1
0 .6 5
- 4 3
1 0 .5
0 .7 8
- 9 9
2 .0 2
9 5
0 .0 6
5 0
0 .6 5
- 4 5
1 1 .0
0 .7 7
- 1 0 3
2 .0 0
9 2
0 .0 6
4 8
0 .6 5
- 4 8
1 1 .5
0 .7 8
- 1 0 6
1 .9 6
8 8
0 .0 6
4 6
0 .6 5
- 5 1
1 2 .0
0 .7 7
- 1 1 0
1 .9 0
8 4
0 .0 6
4 4
0 .6 5
- 5 4
1 2 .5
0 .7 7
- 1 1 4
1 .8 4
8 1
0 .0 6
4 2
0 .6 4
- 5 6
1 3 .0
0 .7 6
- 1 1 7
1 .7 9
7 9
0 .0 6
3 9
0 .6 4
- 5 8
1 3 .5
0 .7 5
- 1 2 0
1 .7 4
7 6
0 .0 6
3 7
0 .6 4
- 6 0
1 4 .0
0 .7 5
- 1 2 3
1 .6 9
7 3
0 .0 7
3 5
0 .6 4
- 6 4
1 4 .5
0 .7 4
- 1 2 5
1 .6 4
6 9
0 .0 7
3 2
0 .6 4
- 6 9
1 5 .0
0 .7 4
- 1 2 8
1 .5 6
6 5
0 .0 7
2 9
0 .6 5
- 7 4
1 5 .5
0 .7 4
- 1 3 1
1 .4 9
6 1
0 .0 7
2 5
0 .6 6
- 7 8
1 6 .0
0 .7 3
- 1 3 3
1 .4 3
5 9
0 .0 8
2 3
0 .6 5
- 8 1
1 6 .5
0 .7 2
- 1 3 6
1 .3 8
5 7
0 .0 8
2 1
0 .6 5
- 8 1
1 7 .0
0 .7 3
- 1 3 9
1 .3 6
5 4
0 .0 8
2 1
0 .6 6
- 8 1
1 7 .5
0 .7 3
- 1 4 0
1 .3 1
5 2
0 .0 9
2 2
0 .6 6
- 8 2
1 8 .0
0 .7 4
- 1 4 2
1 .2 6
5 0
0 .0 9
2 2
0 .6 6
- 8 3
TYPICAL S-PARAMETERS
T
A
= 25
o
C, V
DS
= 3 V, I
DS
= 15mA
Reference planes for S-parameter data are located at center of gate and drain bond
pads. Three 0.7 mil diameter wires, approximately 13 mils long, are bonded from the
center of each of the source pads to ground. The S-parameters are also available on
floppy disk and the world wide web.
TGF1350-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
4
RF CHARACTERISTICS
DC CHARACTERISTICS
V
DS
= 3 V, I
DS
= 15mA, T
A
= 25
O
C
T
A
= 25
O
C
*V
DSS
= V
DS
@ I
DSS
**V
DS
for I
DSS
is the drain voltage between 0.5V and 3.5V at which drain current is highest.
EQUIVALENT SCHEMATIC
PARAMETER
TEST CONDITIONS
TYP
UNIT
NF
MIN
Min im u m n o is e fig u re
1 0 GHz
1 .5
1 8 GHz
2 .5
d B
G
A
As s o ciated g ain
1 0 GHz
1 1
1 8 GHz
7
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNIT
V
(BR)GDO
Gated rain b reak d o wn vo ltag e
I
GS
= 1 .0 m A p er m m
- 6
V
V
(BR)GSO
Gates o u rce b reak d o wn vo ltag e
I
GD
= 1 .0 m A p er m m
- 6
V
V
GS(OFF)
Gates o u rce cu to ff (p in ch o ff)
V
DS
= V
DSS
*
- 0 .5 - 1 .2 - 3
V
vo ltag e
I
D
= 0 .5 m A p er m m
I
DSS
Zero g atevo ltag e d rain cu rren t
V
DS
= 0 .5 V to 3 .5 V**
3 0
5 0
1 0 0
m A
at s atu ratio n
V
GS
= 0
G
M
DC tran s co n d u ctan ce
V
DS
= 0 .5 V to V
DSS
*
4 0
5 0
7 8
m A
V
GS
= - 0 .2 5 V
TGF1350-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
5
PARAMETER
VALUE
STANDARD
DEVIATION
UNIT
r
s
So u rce res is tan ce
5 .6 2
0 .6
r
d
Drain res is tan ce
4 .4 8
0 .4
r
g
Gate res is tan ce
4 .6 8
0 .5
g
m
Tran s co n d u ctan ce
5 2 .3 2
6
m S
r
d s
Drain to s o u rce res is tan ce
2 2 4
4 0
r
i
In p u t res is tan ce
1 .3 0
1
C
g s
Gateto s o u rce cap acitan ce
0 .3 5 1
0 .0 2 7
p F
C
g d
Gateto d rain cap acitan ce
0 .0 1 5 9
0 .0 0 3 7
p F
C
d s
Drain to s o u rce cap acitan ce
0 .0 8 7 7
0 .0 0 9 5
p F
Tim e co n s tan t
2 .3 3
0 .1
p s
TYPICAL MODEL
PARAMETERS
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
TGF1350-SCC
PDF 
ZIP